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1. 发明授权

US08759128B2 Light emitting diode (LED) die having recessed electrode and light extraction structures and method of fabrication 有权
标题翻译：具有凹陷电极和光提取结构和制造方法的发光二极管（LED）裸片
公开(公告)号：US08759128B2
公开(公告)日：2014-06-24
申请号：US13426705
申请日：2012-03-22
申请人： Jiunn-Yi Chu , Trung Tri Doan
发明人： Jiunn-Yi Chu , Trung Tri Doan
IPC分类号： H01L33/00 , H01L21/461 , H01L21/44 , H01L33/38
CPC分类号： H01L21/461 , H01L21/44 , H01L33/22 , H01L33/382 , H01L2933/0016
摘要： A light emitting diode (LED) die includes a semiconductor substrate having an n-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the n-type confinement layer configured to emit electromagnetic radiation, a p-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; multiple light extraction structures on the n-type confinement layer configured to scatter the electromagnetic radiation; and an electrode in a recess embedded in the n-type confinement layer proximate to the light extraction structures. A method of fabrication includes: forming the semiconductor substrate; forming a recess in the n-type confinement layer having sidewalls and a planar bottom surface; forming an electrode in the recess comprising a conductive material conforming to the sidewalls and to the bottom surface of the recess; planarizing the electrode; and forming a plurality of light extraction structures in the n-type confinement layer proximate to the electrode.
摘要翻译：发光二极管（LED）裸片包括具有n型限制层的半导体衬底，与被配置为发射电磁辐射的n型限制层电接触的多量子阱（MQW）层，p型限制层与多量子阱（MQW）层电接触; n型限制层上的多个光提取结构被配置成散射电磁辐射; 以及嵌入在靠近光提取结构的n型约束层中的凹槽中的电极。一种制造方法包括：形成半导体衬底; 在具有侧壁和平坦底面的n型限制层中形成凹部; 在所述凹部中形成电极，所述电极包括符合所述侧壁和所述凹部的所述底表面的导电材料; 平面化电极; 以及在靠近电极的n型约束层中形成多个光提取结构。

2. 发明申请

US20140151630A1 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：金属器件外延结构的保护
公开(公告)号：US20140151630A1
公开(公告)日：2014-06-05
申请号：US13693199
申请日：2012-12-04
申请人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
发明人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC分类号： H01L33/04
CPC分类号： H01L33/0079 , B82Y20/00 , H01L33/44 , H01S5/0217 , H01S5/18375 , H01S5/34333
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

3. 发明授权

US08686461B2 Light emitting diode (LED) die having stepped substrates and method of fabrication 有权
标题翻译：具有阶梯式衬底和制造方法的发光二极管（LED）裸片
公开(公告)号：US08686461B2
公开(公告)日：2014-04-01
申请号：US13325376
申请日：2011-12-14
申请人： Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
发明人： Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/647 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
摘要翻译：发光二极管（LED）裸片包括具有第一表面和相对的第二表面的第一基底; 在所述第一基板的所述第二表面上的第二基板; 在所述第一基板的所述第一表面上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。

4. 发明授权

US08685764B2 Method to make low resistance contact 有权
标题翻译：低阻抗接触方法
公开(公告)号：US08685764B2
公开(公告)日：2014-04-01
申请号：US11761897
申请日：2007-06-12
申请人： Chen-Fu Chu , Wen-Huang Liu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Trung Tri Doan
发明人： Chen-Fu Chu , Wen-Huang Liu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Trung Tri Doan
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
摘要翻译：提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

5. 发明授权

US08614449B1 Protection for the epitaxial structure of metal devices 有权
标题翻译：保护金属器件的外延结构
公开(公告)号：US08614449B1
公开(公告)日：2013-12-24
申请号：US11548620
申请日：2006-10-11
申请人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
发明人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC分类号： H01L27/15
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：用于制造金属的装置，例如垂直发光二极管（VLED）器件，功率器件，激光二极管，及垂直腔表面发射激光器件的技术，提供了。相应地产生的器件可以受益于更高的收率和比常规的金属器件，如发光二极管的更高的亮度和增加的热导率增强的性能。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

6. 发明申请

US20120168716A1 Light Emitting Diode (LED) Die Having Stepped Substrates And Method Of Fabrication 有权
标题翻译：具有阶梯式衬底的发光二极管（LED）模具及其制造方法
公开(公告)号：US20120168716A1
公开(公告)日：2012-07-05
申请号：US13325376
申请日：2011-12-14
申请人： Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
发明人： Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/647 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
摘要翻译：发光二极管（LED）裸片包括具有第一表面和相对的第二表面的第一基底; 在所述第一基板的所述第二表面上的第二基板; 在所述第一基板的所述第一表面上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。

7. 发明申请

US20120146083A1 VERTICAL LED WITH CURRENT-GUIDING STRUCTURE 有权
标题翻译：具有电流导向结构的垂直LED
公开(公告)号：US20120146083A1
公开(公告)日：2012-06-14
申请号：US13401446
申请日：2012-02-21
申请人： Wen-Huang LIU , Chen-Fu CHU , Jiunn-Yi CHU , Chao-Chen CHENG , Hao-Chun CHENG , Feng-Hsu FAN , Yuan-Hsiao CHANG
发明人： Wen-Huang LIU , Chen-Fu CHU , Jiunn-Yi CHU , Chao-Chen CHENG , Hao-Chun CHENG , Feng-Hsu FAN , Yuan-Hsiao CHANG
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L33/14 , H01L27/15 , H01L33/38 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/0603 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
摘要翻译：提供了用于控制诸如LED的半导体器件中的电流的技术。对于一些实施例，可以提供电流引导结构，包括相邻的高和低接触区域。对于一些实施例，可以提供第二电流路径（除了n接触焊盘和衬底之间的电流路径之外）。对于一些实施例，可以提供电流引导结构和第二电流路径。

8. 发明授权

US08143112B1 Method for removing semiconductor street material 有权
标题翻译：去除半导体街道材料的方法
公开(公告)号：US08143112B1
公开(公告)日：2012-03-27
申请号：US12696965
申请日：2010-01-29
申请人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L21/20
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

9. 发明授权

US07829440B2 Method of separating semiconductor dies 有权
标题翻译：分离半导体管芯的方法
公开(公告)号：US07829440B2
公开(公告)日：2010-11-09
申请号：US11835289
申请日：2007-08-07
申请人： Jiunn-Yi Chu , Chao-Chen Cheng , Chen-Fu Chu , Trung Tri Doan
发明人： Jiunn-Yi Chu , Chao-Chen Cheng , Chen-Fu Chu , Trung Tri Doan
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , H01L33/0079 , H01L33/0095
摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.
摘要翻译：描述了在半导体制造期间分离多个管芯的方法。在包含多个管芯的半导体晶片的上表面上，种子金属层可以用于在其上方生长硬金属层用于处理。除了存在一块停止电镀（EP）材料之外，金属可以被覆盖在这些金属层之上。停止EP材料可能被擦除，并且阻挡层可以形成在整个剩余结构之上。可以去除衬底，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。激光切割加热后的重金属硬度应足够强大。可以将胶带加入到晶片中，并且可以使用断路器将模具分开。可以将所得到的结构翻转，并且可以将带扩展以分离各个管芯。

10. 发明申请

US20080087875A1 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：金属器件外延结构的保护
公开(公告)号：US20080087875A1
公开(公告)日：2008-04-17
申请号：US11548642
申请日：2006-10-11
申请人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
发明人： Feng-Hsu Fan , Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Jui-Kang Yen
IPC分类号： H01L29/06
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/64
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

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