专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07745874B2 Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof 有权
标题翻译：具有多个电荷存储层的浮动栅极，制造浮动栅极的方法，使用其的非易失性存储器件及其制造方法
公开(公告)号：US07745874B2
公开(公告)日：2010-06-29
申请号：US11907639
申请日：2007-10-16
申请人： Jang-Sik Lee , Jinhan Cho , Jaegab Lee
发明人： Jang-Sik Lee , Jinhan Cho , Jaegab Lee
IPC分类号： H01L29/792
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/513
摘要： Provided is a floating gate having multiple charge storing layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storing layers using metal nano-crystals of nano size is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-crystal film which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of metal nano-crystals for trapping charges are deposited. The floating gate is made by self-assembling the metal nano-crystals on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.
摘要翻译：提供了具有多个电荷存储层的浮动栅极，使用该浮置栅极的非易失性存储器件以及制造浮置栅极和非易失性存储器件的方法，其中使用金属纳米晶体的多个电荷存储层形成纳米尺寸，从而增强存储器件的电荷存储容量。浮栅包括沉积在隧道氧化膜上的聚合物电解质膜，并且由至少一个阶段形成，其中至少一个薄膜沉积在每个载物台上，以及至少一个自身的金属纳米晶体膜组装在聚合物电解质膜的每个阶段的上表面上，并沉积许多用于捕获电荷的金属纳米晶体。浮栅是通过在聚合物电解膜上自组装金属纳米晶体制成的，因此可以在高温下不经受热处理工艺而制造。

2. 发明授权

US08268711B2 Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof 有权
标题翻译：具有多个电荷存储层的浮动栅极，制造浮动栅极的方法，使用其的非易失性存储器件及其制造方法
公开(公告)号：US08268711B2
公开(公告)日：2012-09-18
申请号：US12791253
申请日：2010-06-01
申请人： Jang-Sik Lee , Jinhan Cho , Jaegab Lee
发明人： Jang-Sik Lee , Jinhan Cho , Jaegab Lee
IPC分类号： H01L21/3205
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/513
摘要： Provided is a floating gate having multiple charge storage layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storage layers using metallic/semiconducting nano-particles is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-particle layer which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of nano-particles for trapping charges are formed. The floating gate is made by self-assembling the nano-particles on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.
摘要翻译：提供了具有多个电荷存储层的浮动栅极，使用该电荷存储层的非易失性存储器件以及制造浮置栅极和非易失性存储器件的方法，其中使用金属/半导体纳米 - 形成颗粒从而增强存储器件的电荷存储容量。浮栅包括沉积在隧道氧化物膜上的聚合物电解质膜，并且由至少一个阶段形成，其中至少一个薄膜沉积在每个阶段上，以及至少一个自身的金属纳米颗粒层组装在聚合物电解膜的每个阶段的上表面上，并形成许多用于捕获电荷的纳米颗粒。浮栅是通过在聚合物电解膜上自组装纳米颗粒而制成的，因此可以在高温下不经受热处理工艺而制造。

3. 发明申请

US20100240208A1 FLOATING GATE HAVING MULTIPLE CHARGE STORING LAYERS, METHOD OF FABRICATING THE FLOATING GATE, NON-VOLATILE MEMORY DEVICE USING THE SAME, AND FABRICATING METHOD THEREOF 有权
标题翻译：具有多个充电储存层的浮动门，浮动栅的制造方法，使用该浮动栅的非易失性存储元件及其制造方法
公开(公告)号：US20100240208A1
公开(公告)日：2010-09-23
申请号：US12791253
申请日：2010-06-01
申请人： JANG-SIK LEE , JINHAN CHO , JAEGAB LEE
发明人： JANG-SIK LEE , JINHAN CHO , JAEGAB LEE
IPC分类号： H01L21/28 , H01L21/31
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/513
摘要： Provided is a floating gate having multiple charge storage layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storage layers using metallic/semiconducting nano-particles is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-particle layer which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of nano-particles for trapping charges are formed. The floating gate is made by self-assembling the nano-particles on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.
摘要翻译：提供了具有多个电荷存储层的浮动栅极，使用该电荷存储层的非易失性存储器件以及制造浮置栅极和非易失性存储器件的方法，其中使用金属/半导体纳米 - 形成颗粒从而增强存储器件的电荷存储容量。浮栅包括沉积在隧道氧化物膜上的聚合物电解质膜，并且由至少一个阶段形成，其中至少一个薄膜沉积在每个阶段上，以及至少一个自身的金属纳米颗粒层组装在聚合物电解膜的每个阶段的上表面上，并形成许多用于捕获电荷的纳米颗粒。浮栅是通过在聚合物电解膜上自组装纳米颗粒而制成的，因此可以在高温下不经受热处理工艺而制造。

4. 发明申请

US20090085094A1 Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof 有权
标题翻译：具有多个电荷存储层的浮动栅极，制造浮动栅极的方法，使用其的非易失性存储器件及其制造方法
公开(公告)号：US20090085094A1
公开(公告)日：2009-04-02
申请号：US11907639
申请日：2007-10-16
申请人： Jang-Sik Lee , Jinhan Cho , Jaegab Lee
发明人： Jang-Sik Lee , Jinhan Cho , Jaegab Lee
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/513
摘要： Provided is a floating gate having multiple charge storing layers, a non-volatile memory device using the same, and a method of fabricating the floating gate and the non-volatile memory device, in which the multiple charge storing layers using metal nano-crystals of nano size is formed to thereby enhance a charge storage capacity of the memory device. The floating gate includes a polymer electrolytic film which is deposited on a tunneling oxide film, and is formed of at least one stage in which at least one thin film is deposited on each stage, and at least one metal nano-crystal film which is self-assembled on the upper surface of each stage of the polymer electrolytic film and on which a number of metal nano-crystals for trapping charges are deposited. The floating gate is made by self-assembling the metal nano-crystals on the polymer electrolytic film, and thus can be fabricated without undergoing a heat treatment process at high temperature.
摘要翻译：提供了具有多个电荷存储层的浮动栅极，使用该浮置栅极的非易失性存储器件以及制造浮置栅极和非易失性存储器件的方法，其中使用金属纳米晶体的多个电荷存储层形成纳米尺寸，从而增强存储器件的电荷存储容量。浮栅包括沉积在隧道氧化膜上的聚合物电解质膜，并且由至少一个阶段形成，其中至少一个薄膜沉积在每个载物台上，以及至少一个自身的金属纳米晶体膜组装在聚合物电解质膜的每个阶段的上表面上，并沉积许多用于捕获电荷的金属纳米晶体。浮栅是通过在聚合物电解膜上自组装金属纳米晶体制成的，因此可以在高温下不经受热处理工艺而制造。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式