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    • 4. 发明申请
    • PLASMA ETCHING CHAMBER AND METHOD FOR MANUFACTURING PHOTOMASK USING THE SAME
    • 等离子体蚀刻室及其制造方法
    • US20070231716A1
    • 2007-10-04
    • US11758258
    • 2007-06-05
    • Jeong-Yun LEEJin-Min KIMHae-Young JEONGYoung-Hwa NOSang-Joon YOONSung-Yong CHO
    • Jeong-Yun LEEJin-Min KIMHae-Young JEONGYoung-Hwa NOSang-Joon YOONSung-Yong CHO
    • G03F1/00
    • H01J37/32724G03F1/80H01J37/32009H01J2237/2001
    • A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.
    • 用于制造光掩模的蚀刻工艺中使用的等离子体蚀刻装置的等离子体蚀刻室和使用其的光掩模的制造方法。 等离子体蚀刻室包括具有用于支撑光掩模基板的支撑表面和围绕支撑表面的顶表面的电极,沿着支撑表面的周缘安装的传热元件,以及用于向传热元件供热的加热器 。 在光掩模的制造方法中,在透明基板上形成遮光层。 在遮光层上形成光致抗蚀剂层图案,以部分地曝光遮光层。 在使透明基板的周边边缘的至少一部分的温度保持高于温度的状态下,将遮光层蚀刻以形成遮光层图案,使用具有光致抗蚀剂层图案的等离子体作为蚀刻掩模 在透明基板的中心。