专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070262303A1 Organic semiconductor crystalline film, method for preparing the same, organic transistor, and organic phototransistor 审中-公开
标题翻译：有机半导体晶体膜，其制备方法，有机晶体管和有机光电晶体管
公开(公告)号：US20070262303A1
公开(公告)日：2007-11-15
申请号：US11788957
申请日：2007-04-21
申请人： Donghang Yan , Haibo Wang , Feng Zhu , Jianwu Shi , De Song
发明人： Donghang Yan , Haibo Wang , Feng Zhu , Jianwu Shi , De Song
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/428 , H01L51/0012 , H01L51/0068 , H01L51/0078 , H01L51/0545 , Y02E10/549
摘要： An organic semiconductor crystalline film and weak oriented epitaxy growth preparation method thereof. The organic semiconductor crystalline film is a n-type semiconductor or a p-type semiconductor, and organic semiconductor crystal molecules in the organic semiconductor crystalline film are oriented in a stand-up manner on the ordered substrate, and have an oriented relationship with the ordered substrate. The organic semiconductor crystalline film prepared by the present invention is useful for organic transistor and organic phototransistor devices. The method of the present invention can control the high carrier mobility direction of organic semiconductor crystals to have ordered orientation in the film, enhance contacts between crystals, improve mechanical strength and micro-machining property of the film, and give a high carrier mobility. The carrier mobility of weak oriented epitaxially grown film of the present invention is 0.32 cm2/Vs, which is 5 times as large as that of a vapor phase deposited film, and is similar to that of single crystal. The present invention is adapted to glass substrates and plastic substrates.
摘要翻译：一种有机半导体晶体膜及其弱取向外延生长的制备方法。有机半导体结晶膜是n型半导体或p型半导体，有机半导体结晶膜中的有机半导体晶体分子以有序的基板上的立式取向，并且与有序半导体结晶膜具有定向关系基质。通过本发明制备的有机半导体晶体膜可用于有机晶体管和有机光电晶体管器件。本发明的方法可以控制有机半导体晶体的高载流子迁移率方向在膜中具有有序取向，增强晶体之间的接触，提高膜的机械强度和微加工性能，并赋予高载流子迁移率。本发明的弱取向外延生长膜的载流子迁移率为0.32cm 2 / Vs，为气相沉积膜的5倍，与单晶相似。本发明适用于玻璃基板和塑料基板。

IPRDB

热门服务

关于我们

友情链接

联系方式