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    • 3. 发明申请
    • SOLID STATE LIGHTING DEVICES WITH SELECTED THERMAL EXPANSION AND/OR SURFACE CHARACTERISTICS, AND ASSOCIATED METHODS
    • 具有选择的热膨胀和/或表面特性的固态照明装置及相关方法
    • US20110121310A1
    • 2011-05-26
    • US12861706
    • 2010-08-23
    • Ji-Soo Park
    • Ji-Soo Park
    • H01L33/32
    • H01L33/12H01L33/007H01L33/32
    • Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods are disclosed. A method in accordance with a particular embodiment includes forming an SSL (solid state lighting) formation structure having a formation structure coefficient of thermal expansion (CTE), selecting a first material of an interlayer structure to have a first material CTE greater than the substrate CTE, and selecting a second material of the interlayer structure based at least in part on the second material having a second material CTE less than the first material CTE. The method can further include forming the interlayer structure over the SSL formation structure by disposing (at least) a first layer of the first material over the SSL formation structure, a portion of the second material over the first material, and a second layer of the first material over the second material. The SSL formation structure supports an SSL emitter material, and the method further includes counteracting a force placed on the formation structure by the first material, by virtue of the difference between the second material CTE and the first material CTE. In other embodiments, the SSL formation structure can have an off-cut angle with a non-zero value of up to about 4.5 degrees.
    • 公开了具有选择的热膨胀和/或表面特性的固态照明装置及相关方法。 根据特定实施例的方法包括形成具有地层结构热膨胀系数(CTE)的SSL(固态照明)形成结构,选择层间结构的第一材料以使第一材料CTE大于衬底CTE 并且至少部分地基于具有小于第一材料CTE的第二材料CTE的第二材料选择层间结构的第二材料。 该方法还可以包括通过在第一材料上设置(至少)第一材料的第一层,在第一材料上方的第二材料的一部分,以及第二材料的第二层,在SSL形成结构之上形成层间结构, 第一种材料在第二种材料上。 SSL形成结构支持SSL发射器材料,并且该方法还包括通过第二材料CTE和第一材料CTE之间的差异来抵消由第一材料施加在地层结构上的力。 在其他实施例中,SSL形成结构可以具有高达约4.5度的非零值的偏角。
    • 9. 发明授权
    • Method of forming polycide
    • 形成聚硅氧烷的方法
    • US06177335B1
    • 2001-01-23
    • US09522069
    • 2000-03-09
    • Ji-Soo ParkDong-Kyun Sohn
    • Ji-Soo ParkDong-Kyun Sohn
    • H01L2120
    • H01L29/4933H01L21/28044
    • The method of forming a polycide that includes the steps of forming an insulating layer on a substrate, forming a first semiconductor layer on the insulating layer and forming a metal-ion buried layer in the first semiconductor layer; wherein the metal-ion buried layer is formed to be located to a predetermined depth from an upper surface of the first semiconductor layer. An impurity-ion buried layer is formed under the metal-ion buried layer in the first semiconductor layer such that the impurity-ion buried layer makes the first conductive layer electrically-conductive. A silicide layer and a conductive second semiconductor layer are formed by carrying out thermal treatment on the metal-ion buried layer and the impurity-ion buried layer.
    • 一种形成多晶硅化物的方法,包括以下步骤:在衬底上形成绝缘层,在绝缘层上形成第一半导体层,并在第一半导体层中形成金属离子掩埋层; 其中所述金属离子掩埋层被形成为从所述第一半导体层的上表面定位到预定深度。 在第一半导体层中的金属离子掩埋层的下方形成杂质离子掩埋层,使得杂质离子埋层使第一导电层导电。 通过对金属离子掩埋层和杂质离子掩埋层进行热处理,形成硅化物层和导电性第二半导体层。