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1. 发明授权

US09780398B1 Selectively locatable power generation system employing a water splitting process 有权
公开(公告)号：US09780398B1
公开(公告)日：2017-10-03
申请号：US15154173
申请日：2016-05-13
申请人： Jerry M. Woodall , Thomas E. Rowley
发明人： Jerry M. Woodall , Thomas E. Rowley
IPC分类号： H01M8/06 , H01M8/0606 , B01J19/24 , C01B3/08 , F24F5/00 , F28D20/02
CPC分类号： H01M8/0606 , B01J19/24 , B01J2219/00094 , C01B3/08 , C01B2203/066 , F24F5/0014 , F28D20/02 , H01M8/065 , H01M2250/10 , H01M2250/20 , H01M2250/405 , Y02B90/14 , Y02E60/36 , Y02T90/32
摘要： The invention is a power generation system which involves a water-splitting reaction employing metal feedstock to generate heat, hydrogen and metal hydroxide. The heat produced by the power generation system supplies a Heating-Ventilation-Air Conditioning (HVAC) system for heating and cooling building structures, such as homes, kiosks, commercial buildings and greenhouses. The hydrogen gas component produced by the invention is sufficient to fuel a fuel cell vehicle (FCV) and a fuel cell, which provides electricity to an associated building structure. The invention can be located on-site with a building structure and provides a readily available FCV fueling station associated with the building structure where an FCV is located.

2. 发明授权

US09624103B1 Method and system for continuously producing hydrogen, heat and aluminum oxides on-demand 有权
公开(公告)号：US09624103B1
公开(公告)日：2017-04-18
申请号：US14514777
申请日：2014-10-15
申请人： Jerry M Woodall , Thomas E Rowley
发明人： Jerry M Woodall , Thomas E Rowley
IPC分类号： C01B3/08 , C01F7/42 , F28D15/02
CPC分类号： C01B3/08 , C01F7/42 , C01F7/428 , C01P2006/80 , C22C28/00 , F28D15/02 , F28D2021/0019 , Y02E60/36
摘要： A method and system for producing hydrogen gas, heat and an oxide component using water splitting process is disclosed. The system comprises a dry first chamber containing a passivating-oxide preventing agent that receives a solid material feedstock and dissolves the solid material feedstock in the passivating-oxide preventing agent. The passivating-oxide preventing agent becomes saturated with the solid material in the first chamber and is then transferred to a second chamber without contact with water. In the second chamber, the solid material saturated in the passivating-oxide preventing agent reacts with the water so as to generate hydrogen gas, an oxide component and heat. Following the reaction, the solid material depleted passivating-oxide preventing agent and water is recycled to be re-used in the water splitting process.

3. 发明授权

US09580310B1 Method and apparatus for producing hydrogen and aluminum oxide from solid aluminum 有权
标题翻译：从固体铝制造氢氧化铝的方法和装置
公开(公告)号：US09580310B1
公开(公告)日：2017-02-28
申请号：US14696281
申请日：2015-04-24
申请人： Jerry M. Woodall , Thomas E. Rowley
发明人： Jerry M. Woodall , Thomas E. Rowley
IPC分类号： C01B3/08 , C01B3/00 , C01F7/42 , C01B3/04 , B01J19/24
CPC分类号： C01B3/08 , B01J19/24 , B01J2219/24 , C01B3/042 , C01F5/04 , C01F7/42 , C01F7/428 , Y02E60/36
摘要： A method and apparatus for producing hydrogen and a passivating oxide using water splitting techniques is disclosed. The apparatus comprises a container filled with a passivating-oxide preventing agent that is substantially inert to water in an effective amount to prevent passivation of a solid-state material during oxidation and a conduit for inserting a solid-state material into the passivating-oxide preventing agent in which the solid-state material is submerged in the passivating-oxide preventing agent without being in direct contact with water. The solid-state material is capable of dissolving in the passivating-oxide preventing agent and reacting with the water. Thus, the method provides continuous dissolution of the solid-state material into the passivating-oxide preventing agent and its alloys in the presence of excess water at or near room temperature to enable continuous generation of hydrogen, passivating oxide and heat.
摘要翻译：公开了一种使用水分解技术生产氢气和钝化氧化物的方法和装置。该装置包括填充有钝化氧化物防止剂的容器，其有效量的水基本上是惰性的，以防止氧化期间固体材料的钝化，以及用于将固态材料插入钝化氧化物防止剂的导管其中固态材料浸没在钝化 - 氧化物防止剂中而不直接与水接触的试剂。固态物质能够溶解在钝化氧化物防止剂中并与水反应。因此，该方法提供了在室温或接近室温的多余水存在下，将固态材料连续溶解到钝化 - 氧化物防止剂及其合金中，以连续产生氢气，钝化氧化物和加热。

4. 发明授权

US09056769B1 Method and apparatus for producing hydrogen and aluminum oxide from solid aluminum 有权
标题翻译：从固体铝制造氢氧化铝的方法和装置
公开(公告)号：US09056769B1
公开(公告)日：2015-06-16
申请号：US14261791
申请日：2014-04-25
申请人： Jerry M. Woodall , Thomas E. Rowley
发明人： Jerry M. Woodall , Thomas E. Rowley
IPC分类号： C01B3/00 , C01B3/08 , C01F7/42 , C01B3/04
CPC分类号： C01B3/08 , B01J19/24 , B01J2219/24 , C01B3/042 , C01F5/04 , C01F7/42 , C01F7/428 , Y02E60/36
摘要： A method and apparatus for producing hydrogen and a passivating oxide using water splitting techniques is disclosed. The apparatus comprises a container filled with a passivating-oxide preventing agent that is substantially inert to water in an effective amount to prevent passivation of a solid-state material during oxidation and a means for inserting a solid-state material into the passivating-oxide preventing agent in which the solid-state material is submerged in the passivating-oxide preventing agent without being in direct contact with water. The solid-state material is capable of dissolving in the passivating-oxide preventing agent and reacting with the water. Thus, the method provides continuous dissolution of the solid-state material into the passivating-oxide preventing agent and its alloys in the presence of excess water at or near room temperature to enable continuous generation of hydrogen, passivating oxide and heat.
摘要翻译：公开了一种使用水分解技术生产氢气和钝化氧化物的方法和装置。该装置包括填充有钝化 - 氧化物防止剂的容器，该钝化氧化物防止剂基本上对水有惰性的有效量，以防止氧化期间固体材料的钝化，以及用于将固态材料插入钝化氧化物防止装置其中固态材料浸没在钝化 - 氧化物防止剂中而不直接与水接触的试剂。固态物质能够溶解在钝化氧化物防止剂中并与水反应。因此，该方法提供了在室温或接近室温的多余水存在下，将固态材料连续溶解到钝化 - 氧化物防止剂及其合金中，以连续产生氢气，钝化氧化物和加热。

5. 发明申请

US20120052001A1 ENERGY STORAGE AND GENERATION OF HYDROGEN AND HEAT ON DEMAND 审中-公开
标题翻译：能源储存和氢发生量
公开(公告)号：US20120052001A1
公开(公告)日：2012-03-01
申请号：US13218033
申请日：2011-08-25
申请人： Jerry M. Woodall , Go Choi
发明人： Jerry M. Woodall , Go Choi
IPC分类号： C01B3/08 , C01F7/02 , C09K3/00
CPC分类号： C01B3/08 , C22C21/00 , Y02E60/36 , Y02P20/128
摘要： A composition for splitting water into hydrogen and a hydroxide component, the composition comprising a solid-state component including at least one of aluminum and tin and a liquid metal alloy that is capable of at least partially dissolving the solid-state component, the liquid metal alloy including at least one of gallium and indium.
摘要翻译：一种用于将水分解成氢气和氢氧化物组分的组合物，所述组合物包含包含铝和锡中的至少一种的固态组分和能够至少部分溶解固态组分的液态金属合金，所述液态金属合金，其包括镓和铟中的至少一种。

6. 发明申请

US20090064922A1 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices 审中-公开
标题翻译：超掺杂半导体材料和超掺杂半导体材料和器件的方法
公开(公告)号：US20090064922A1
公开(公告)日：2009-03-12
申请号：US11708652
申请日：2007-02-20
申请人： Thomas D. Boone , Eric S. Harmon , Robert D. Koudelka , David B. Salzman , Jerry M. Woodall
发明人： Thomas D. Boone , Eric S. Harmon , Robert D. Koudelka , David B. Salzman , Jerry M. Woodall
IPC分类号： C30B15/14 , C30B23/02
CPC分类号： H01L33/025 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02395 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/02579 , H01L21/02631 , H01L29/207 , H01L29/36 , H01L29/66318 , H01L29/66462 , H01L29/66924 , H01L29/7371 , H01L29/7785 , H01L29/802
摘要： Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
摘要翻译：公开了用于生产高掺杂半导体材料的方法。使用本发明，可以实现超过传统的已建立的载流子饱和极限而没有有害的副作用的掺杂密度。此外，公开了高度掺杂的半导体材料，以及使用所述材料的改进的电子和光电子器件/部件。通过本发明实现的创新材料和工艺为各种基于半导体的微电子和光电子器件/系统产生显着的性能改进和/或降低成本。材料在富含阴离子的环境中生长，在优选的实施方案中，其在贫氧环境中生长期间由适度的底物温度产生。与现有技术材料相比，这些材料在较高的掺杂浓度下表现出较少的非辐射复合中心，并且高度掺杂的物质状态可以表现出在较高的掺杂水平和较高的多数载流子浓度的情况下以辐射复合为主的少数载流子寿命，。这些新型材料所能实现的重要应用包括高性能电子或光电子器件，可以更小更快地捕获或发光，而高性能电子器件（如可以更小更快更冷却的晶体管）。

7. 发明授权

US5371399A Compound semiconductor having metallic inclusions and devices fabricated therefrom 失效
标题翻译：具有金属夹杂物的复合半导体及其制造的器件
公开(公告)号：US5371399A
公开(公告)日：1994-12-06
申请号：US104423
申请日：1993-08-09
申请人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M Woodall
发明人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M Woodall
IPC分类号： H01L31/0232 , H01L31/105 , H01L29/48
CPC分类号： H01L31/0232 , H01L31/105
摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
摘要翻译：具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。

8. 发明授权

US5221367A Strained defect-free epitaxial mismatched heterostructures and method of fabrication 失效
标题翻译：应变无缺陷的异种结构异构体和制造方法
公开(公告)号：US5221367A
公开(公告)日：1993-06-22
申请号：US227955
申请日：1988-08-03
申请人： Matthew F. Chisholm , Peter D. Kirchner , Alan C. Warren , Jerry M. Woodall
发明人： Matthew F. Chisholm , Peter D. Kirchner , Alan C. Warren , Jerry M. Woodall
IPC分类号： C30B25/02 , C30B29/40 , C30B29/68 , H01L21/20 , H01L21/203 , H01L29/201
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , Y10S148/072 , Y10S148/097 , Y10S438/933 , Y10S438/938
摘要： Heterostructures having a large lattice mismatch between an upper epilayer and a substrate and a method of forming such structures having a thin intermediate layer are disclosed. The strain due to a lattice mismatch between the intermediate layer and the substrate is partially relieved by the formation of edge type dislocations which are localized and photoelectrically inactive. Growth of the intermediate layer is interrupted before it reaches the thickness at which the left over strain is relieved by 60 degree type threading dislocations. The upper epilayer is then grown in an unstrained and defect-free condition upon the intermediate layer where the unstrained lattice constant of the epilayer is about the same as the partially relieved strain lattice constant or the intermediate layer. An unstrained defect-free epilayer of InGaAs has been grown on a GaAs substrate with an intermediate layer 3-10 nm in thickness of InAs. Other large mismatch systems are disclosed, including, GaAs on Si with an intermediate layer of GaInAs.

9. 发明授权

US4801984A Semiconductor ohmic contact 失效
标题翻译：半导体欧姆接触
公开(公告)号：US4801984A
公开(公告)日：1989-01-31
申请号：US005321
申请日：1987-01-15
申请人： Jerry M. Woodall
发明人： Jerry M. Woodall
IPC分类号： H01L21/285 , H01L29/205 , H01L29/45 , H01L29/161 , H01L23/48 , H01L29/20
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/205
摘要： An ohmic contact to intermetallic semiconductors with a resistance of much less than 10.sup.-6 ohm cm.sup.2 can be provided by introducing between the semiconductor and an external metal contact an atomically compatible barrier-free graded layer of a conductor having at the interface with a metal external contact an energy gap width of the semiconductor less than 0.5 electron volts. An ohmic contact for gallium arsenide can be provided by a graded region of indium gallium arsenide that decreases to indium arsenide at the interface with a metal.
摘要翻译：通过在半导体和外部金属接触之间引入具有与金属外部的界面处的导体的原子兼容的无障碍梯度层，可以提供电阻远小于10-6欧姆·cm 2的金属间半导体的欧姆接触接触半导体的能隙宽度小于0.5电子伏。砷化镓的欧姆接触可以通过在与金属的界面处降低到砷化铟的砷化铟镓的分级区域来提供。

10. 发明授权

US4638342A Space charge modulation device 失效
标题翻译：空间电荷调制装置
公开(公告)号：US4638342A
公开(公告)日：1987-01-20
申请号：US419381
申请日：1982-09-17
申请人： John L. Freeouf , Thomas N. Jackson , Steven E. Laux , Jerry M. Woodall
发明人： John L. Freeouf , Thomas N. Jackson , Steven E. Laux , Jerry M. Woodall
IPC分类号： H01L29/80 , H01L21/338 , H01L29/772 , H01L29/812 , H01L29/56
CPC分类号： H01L29/8122 , H01L29/7722
摘要： An electrical device which employs two-dimensional space charge modulation in a semiconductor structure. The device has an approximately Debye length wide contact and a rectifying contact positioned adjacent to each other within a Debye length on a semiconductor body and a contact remotely positioned. A bias on the rectifying contact will effect conduction between the other contacts.
摘要翻译：一种在半导体结构中采用二维空间电荷调制的电子装置。该器件在半导体本体上的德拜长度和远程定位的触点之间具有大致德拜长度的宽触点和整流触点彼此相邻定位。整流触点的偏压将影响其他触点之间的导通。

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