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1. 发明申请

US20110151776A1 COMPACT LOW LOSS HIGH FREQUENCY SWITCH WITH IMPROVED LINEARITY PEROFRMANCE 有权
标题翻译：紧凑型低损耗高频开关，具有改进的线性度
公开(公告)号：US20110151776A1
公开(公告)日：2011-06-23
申请号：US12980759
申请日：2010-12-29
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B7/185
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

2. 发明授权

US07550785B1 PHEMT structure having recessed ohmic contact and method for fabricating same 有权
标题翻译：具有凹陷欧姆接触的PHEMT结构及其制造方法
公开(公告)号：US07550785B1
公开(公告)日：2009-06-23
申请号：US11293348
申请日：2005-12-02
申请人： Jerod F. Mason , Dylan C. Bartle
发明人： Jerod F. Mason , Dylan C. Bartle
IPC分类号： H01L29/08
CPC分类号： H01L29/41766 , H01L29/205 , H01L29/452 , H01L29/66462 , H01L29/7787
摘要： According to an exemplary embodiment, a PHEMT (pseudomorphic high electron mobility transistor) structure includes a conductive channel layer. The PHEMT structure further includes at least one doped layer situated over the conductive channel layer. The at least one doped layer can include a heavily doped layer situated over a lightly doped layer. The PHEMT structure further includes a recessed ohmic contact situated on the conductive channel layer, where the recessed ohmic contact is situated in a source/drain region of the PHEMT structure, and where the recessed ohmic contact extends below the at least one doped layer. According to this exemplary embodiment, the recessed ohmic contact is bonded to the conductive channel layer. The recessed ohmic contact is situated adjacent to the at least one doped layer. The PHEMT structure further includes a spacer layer situated between the at least one doped layer and the conductive channel layer.
摘要翻译：根据示例性实施例，PHEMT（伪晶体高电子迁移率晶体管）结构包括导电沟道层。 PHEMT结构还包括位于导电沟道层上方的至少一个掺杂层。所述至少一个掺杂层可以包括位于轻掺杂层上的重掺杂层。 PHEMT结构还包括位于导电沟道层上的凹陷欧姆接触，其中凹陷欧姆接触位于PHEMT结构的源极/漏极区域中，并且其中凹陷欧姆接触延伸到至少一个掺杂层下方。根据该示例性实施例，凹入的欧姆接触被接合到导电沟道层。凹陷的欧姆接触位于至少一个掺杂层附近。 PHEMT结构还包括位于至少一个掺杂层和导电沟道层之间的间隔层。

3. 发明申请

US20080203478A1 High Frequency Switch With Low Loss, Low Harmonics, And Improved Linearity Performance 审中-公开
标题翻译：具有低损耗，低谐波和改进的线性性能的高频开关
公开(公告)号：US20080203478A1
公开(公告)日：2008-08-28
申请号：US12035519
申请日：2008-02-22
申请人： Dima Prikhodko , Jerod F. Mason , Gouliang Zhou , Gene A. Tkachenko , Steven C. Sprinkle , Oleksiy Klimashov
发明人： Dima Prikhodko , Jerod F. Mason , Gouliang Zhou , Gene A. Tkachenko , Steven C. Sprinkle , Oleksiy Klimashov
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/423 , H01L23/481 , H01L23/642 , H01L23/66 , H01L24/48 , H01L29/1075 , H01L29/407 , H01L29/66462 , H01L29/7787 , H01L2223/6644 , H01L2224/48091 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/19041 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A switch element includes a field effect transistor (FET) structure formed on a substrate, the FET structure having a drain, a gate and a source, the drain having a drain capacitance, the gate having a gate capacitance, the source having a source capacitance and an electrical connection to couple the drain capacitance, gate capacitance and the source capacitance to the substrate.
摘要翻译：开关元件包括形成在衬底上的场效应晶体管（FET）结构，所述FET结构具有漏极，栅极和源极，所述漏极具有漏极电容，所述栅极具有栅极电容，所述源极具有源极电容以及将漏极电容，栅极电容和源极电容耦合到衬底的电连接。

4. 发明授权

US07877058B2 Compact low loss high frequency switch with improved linearity performance 有权
标题翻译：紧凑型低损耗高频开关，具有提高的线性性能
公开(公告)号：US07877058B2
公开(公告)日：2011-01-25
申请号：US11935690
申请日：2007-11-06
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B7/185
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

5. 发明申请

US20120190313A1 COMPACT SWITCH WITH ENHANCED LINEARITY PERFORMANCE 有权
标题翻译：具有增强线性性能的紧凑型开关
公开(公告)号：US20120190313A1
公开(公告)日：2012-07-26
申请号：US13437782
申请日：2012-04-02
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B1/44 , H01L29/812
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

6. 发明授权

US08175523B2 Compact low loss high frequency switch with improved linearity performance 有权
标题翻译：紧凑型低损耗高频开关，具有提高的线性性能
公开(公告)号：US08175523B2
公开(公告)日：2012-05-08
申请号：US12980759
申请日：2010-12-29
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B7/185
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

7. 发明授权

US08509682B2 Compact switch with enhanced linearity performance 有权
标题翻译：紧凑型开关具有增强的线性性能
公开(公告)号：US08509682B2
公开(公告)日：2013-08-13
申请号：US13437782
申请日：2012-04-02
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B7/185
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

8. 发明授权

US07678629B1 Method for fabricating a recessed ohmic contact for a PHEMT structure 有权
标题翻译：制造用于PHEMT结构的凹陷欧姆接触的方法
公开(公告)号：US07678629B1
公开(公告)日：2010-03-16
申请号：US11827001
申请日：2007-07-09
申请人： Jerod F. Mason , Dylan C. Bartle
发明人： Jerod F. Mason , Dylan C. Bartle
IPC分类号： H01L21/338
CPC分类号： H01L29/41766 , H01L29/205 , H01L29/452 , H01L29/66462 , H01L29/7787
摘要： According to an exemplary embodiment, a PHEMT (pseudomorphic high electron mobility transistor) structure includes a conductive channel layer. The PHEMT structure further includes at least one doped layer situated over the conductive channel layer. The at least one doped layer can include a heavily doped layer situated over a lightly doped layer. The PHEMT structure further includes a recessed ohmic contact situated on the conductive channel layer, where the recessed ohmic contact is situated in a source/drain region of the PHEMT structure, and where the recessed ohmic contact extends below the at least one doped layer. According to this exemplary embodiment, the recessed ohmic contact is bonded to the conductive channel layer. The recessed ohmic contact is situated adjacent to the at least one doped layer. The PHEMT structure further includes a spacer layer situated between the at least one doped layer and the conductive channel layer.
摘要翻译：根据示例性实施例，PHEMT（伪晶体高电子迁移率晶体管）结构包括导电沟道层。 PHEMT结构还包括位于导电沟道层上方的至少一个掺杂层。所述至少一个掺杂层可以包括位于轻掺杂层上的重掺杂层。 PHEMT结构还包括位于导电沟道层上的凹陷欧姆接触，其中凹陷欧姆接触位于PHEMT结构的源极/漏极区域中，并且其中凹陷欧姆接触延伸到至少一个掺杂层下方。根据该示例性实施例，凹入的欧姆接触被接合到导电沟道层。凹陷的欧姆接触位于至少一个掺杂层附近。 PHEMT结构还包括位于至少一个掺杂层和导电沟道层之间的间隔层。

9. 发明申请

US20080166981A1 Compact Low Loss High Frequency Switch With Improved Linearity Performance 有权
标题翻译：紧凑型低损耗高频开关，提高线性性能
公开(公告)号：US20080166981A1
公开(公告)日：2008-07-10
申请号：US11935690
申请日：2007-11-06
申请人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
发明人： Dima Prikhodko , Jerod F. Mason , Steven P. Matte , John Pessia , Jason Chiesa , Sergey Nabokin , Gene A. Tkachenko , Richard A. Carter , Steven C. Sprinkle , Mikhail Shirokov
IPC分类号： H04B1/48 , H03K17/687 , H01L21/338
CPC分类号： H04B1/48 , H01P1/15 , H03K17/6871 , H03K17/693
摘要： A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要翻译：开关元件包括具有漏极，源极和多个栅极以及位于所述多个栅极之间的至少一个附加互连的开关器件，所述附加互连可操作以在所述至少两个栅极之间建立恒定电位。

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