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    • 4. 发明申请
    • IMPROVED PLANARIZATION PROCESS FOR PRODUCING CARRIERS WITH LOW STEP HEIGHT
    • 用于生产具有低步高度的载体的改进的平面化方法
    • US20060232886A1
    • 2006-10-19
    • US11425666
    • 2006-06-21
    • Ping-Wei ChangBrad JacksonBulent KurdiJennifer LuDennis McKeanEun Row
    • Ping-Wei ChangBrad JacksonBulent KurdiJennifer LuDennis McKeanEun Row
    • G11B5/60
    • G11B5/6082G11B5/3173
    • A process to reduce step heights in planarization of thin film carriers in an encapsulation system. The improvements include using an adhesive tape having a thinner adhesive thickness and a stiffer tape for the film sealing the encapsulant on the carrier to result in a low step height surface transition between the carrier and the cured encapsulant. The composition of the encapsulant is modified to reduce the shrinkage upon curing of the encapsulant. The encapsulant may include an absorbent that absorbs the irradiation and cause the top surface to harden first compared to the bulk of the encapsulant, and/or a gas-emitting additive that creates gaseous products that expand upon irradiation to thereby reduce the shrinkage of the encapsulant upon curing. Alternatively, irradiation at very low incidence angle relative to the top surface of the encapsulant causes the top surface to harden before the bulk of the encapsulant.
    • 一种降低封装系统中薄膜载体平面化阶跃高度的方法。 这些改进包括使用具有较薄粘合剂厚度的粘合带和用于将密封剂密封在载体上的较硬的胶带,导致载体和固化的密封剂之间的低台阶高度表面过渡。 改进密封剂的组成以减少密封剂固化时的收缩。 密封剂可以包括吸收辐射的吸收剂,并且使顶部表面首先与密封剂的主体相比硬化,和/或产生气体产物的气体发射添加剂,其在照射时膨胀,从而减小密封剂的收缩 固化后。 或者,相对于密封剂的顶表面以非常低的入射角照射导致顶表面在大部分密封剂之前硬化。
    • 6. 发明申请
    • System and method for growing nanostructures from a periphery of a catalyst layer
    • 从催化剂层的周边生长纳米结构的系统和方法
    • US20060084570A1
    • 2006-04-20
    • US11035595
    • 2005-01-14
    • Thomas KopleyJennifer LuNicolas MollSungsoo Yi
    • Thomas KopleyJennifer LuNicolas MollSungsoo Yi
    • B01J21/04
    • B82Y40/00B01J23/74B01J35/0013C01B32/162
    • Systems and methods are provided for limiting the growth of nanostructures, such as nanotubes, from a catalyst layer. More particularly, systems and methods are provided for growing nanostructures from the periphery of a catalyst layer. In certain embodiments, a catalyst layer from which nanostructures can be grown during a growth process, such as CVD or PECVD, is located on a substrate. The catalyst layer is covered with a covering layer such that the catalyst layer is sandwiched between the substrate and the covering layer. The resulting structure then undergoes a nanostructure growth process. Because the catalyst layer is sandwiched between the substrate and the covering layer, growth of nanostructures is limited to growth from nanoparticles located on the periphery of the catalyst layer. Thus, growth of nanostructures does not result from nanoparticles located in an interior region of the catalyst layer.
    • 提供了系统和方法,用于从催化剂层限制纳米结构如纳米管的生长。 更具体地,提供了用于从催化剂层的周边生长纳米结构的系统和方法。 在某些实施方案中,在生长过程(例如CVD或PECVD)中可以从其中生长纳米结构的催化剂层位于基底上。 催化剂层被覆盖层覆盖,使得催化剂层夹在基板和覆盖层之间。 所得结构然后经历纳米结构生长过程。 由于催化剂层夹在基材和覆盖层之间,纳米结构的生长被限制在从位于催化剂层周边的纳米颗粒生长。 因此,纳米结构的生长不是由位于催化剂层的内部区域中的纳米颗粒产生的。