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    • 4. 发明申请
    • PHOTOVOLTAIC DEVICE AND METHOD OF MAKING SAME
    • 光电器件及其制造方法
    • US20110303904A1
    • 2011-12-15
    • US13113606
    • 2011-05-23
    • Sushobhan AvasthiJames C. SturmJeffrey Schwartz
    • Sushobhan AvasthiJames C. SturmJeffrey Schwartz
    • H01L51/46H01L31/11
    • H01L51/4213H01L51/0052H01L51/4273Y02E10/549Y02P70/521
    • A photovoltaic device and method of manufacturing is disclosed. In one embodiment, the device includes a silicon layer and first and second organic layers. The silicon layer has a first face and a second face. First and second electrodes electrically are coupled to the first and second organic layers. A first heterojunction is formed at a junction between the one of the faces of the silicon layer and the first organic layer. A second heterojunction is formed at a junction between one of the faces of the silicon layer and the second organic layer. The silicon layer may be formed without a p-n junction. At least one organic layer may be configured as an electron-blocking layer or a hole-blocking layer. At least one organic layer may be comprised of phenanthrenequinone (PQ). A passivating layer may be disposed between at least one of the organic layers and the silicon layer. The passivating layer may be organic. At least one of the organic layers may passivate a surface of the silicon layer. The device may also include at least one transparent electrode layer coupled to at least one of the electrodes.
    • 公开了一种光电器件及其制造方法。 在一个实施例中,该器件包括硅层和第一和第二有机层。 硅层具有第一面和第二面。 第一和第二电极电连接到第一和第二有机层。 在硅层和第一有机层的一个面之间的接合处形成第一异质结。 在硅层和第二有机层的一个面之间的接合处形成第二异质结。 可以在没有p-n结的情况下形成硅层。 至少一个有机层可以被构造为电子阻挡层或空穴阻挡层。 至少一个有机层可以由菲醌(PQ)组成。 钝化层可以设置在至少一个有机层和硅层之间。 钝化层可以是有机的。 有机层中的至少一个可以钝化硅层的表面。 该装置还可以包括耦合到至少一个电极的至少一个透明电极层。