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1. 发明申请

US20070071896A1 Alkyl push flow for vertical flow rotating disk reactors 审中-公开
标题翻译：用于垂直流动旋转圆盘反应器的烷基推流
公开(公告)号：US20070071896A1
公开(公告)日：2007-03-29
申请号：US10568794
申请日：2003-08-20
申请人： Michael Murphy , Richard Hoffman , Michael Murphy , Richard Hoffman , Jonathan Cruel , Lev Kadinski , Jeffrey Ramer , Eric Armour
发明人： Michael Murphy , Richard Hoffman , Michael Murphy , Richard Hoffman , Jonathan Cruel , Lev Kadinski , Jeffrey Ramer , Eric Armour
IPC分类号： C23C16/00
CPC分类号： C30B25/14 , C23C16/455 , C23C16/45563 , C23C16/45565 , C23C16/45574 , C23C16/45578 , C23C16/458 , C23C16/4584 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/165
摘要： In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.
摘要翻译：在用于在衬底（3）上生长外延层的旋转盘式反应器（1）中，在与盘旋转轴线不同的径向距离处朝向衬底的气体具有基本上相同的速度。指向远离轴线（10a）的盘的部分的气体可以包括比指向靠近轴线（10d）的盘的部分的气体更高浓度的反应气体（4），使得部分与轴线（14）不同距离的基板表面接收与每单位面积基本相同量的反应气体（4）。在反应器内实现期望的流动模式，同时允许外延层在衬底上的均匀沉积和生长。

2. 发明授权

US06492625B1 Apparatus and method for controlling temperature uniformity of substrates 有权
标题翻译：用于控制基板温度均匀性的装置和方法
公开(公告)号：US06492625B1
公开(公告)日：2002-12-10
申请号：US09671527
申请日：2000-09-27
申请人： Vadim Boguslavskiy , Alexander Gurary , Ameesh Patel , Jeffrey Ramer
发明人： Vadim Boguslavskiy , Alexander Gurary , Ameesh Patel , Jeffrey Ramer
IPC分类号： H05B102
CPC分类号： G01J5/0022 , C23C16/46 , C23C16/52 , H01L21/67248 , H01L21/68764 , H01L21/68771
摘要： An apparatus and method for providing substantially uniform substrate temperature in a chemical vapor deposition reaction chamber is provided. The method and apparatus utilize a carrier for holding at least one substrate in the reaction chamber and a plurality of heating elements arranged to heat the carrier and the at least one substrate. At least one substrate pyrometer measures the temperature of the substrates to provide a signal representing the process temperature. This signal is used in a feedback loop to control one or more of the heating elements. At least two carrier pyrometers focused at different zones of the carrier are provided. The signals from the carrier pyrometers are compared to one another to provide an indication of temperature non-uniformity. This indication is used in a separate feedback loop to adjust other heating elements so as to maintain temperature uniformity across the carrier.
摘要翻译：提供了一种用于在化学气相沉积反应室中提供基本均匀的衬底温度的装置和方法。该方法和装置利用载体将至少一个基板保持在反应室中，以及布置成加热载体和至少一个基板的多个加热元件。至少一个基板高温计测量基板的温度以提供表示工艺温度的信号。该信号用于反馈回路中以控制一个或多个加热元件。提供聚焦在载体的不同区域的至少两个载体高温计。将来自载体高温计的信号彼此比较以提供温度不均匀性的指示。该指示用于单独的反馈回路以调整其他加热元件，以便保持载体上的温度均匀性。

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