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1. 发明授权

US09553105B2 Semiconductor devices including gate insulation layers on channel materials 有权
标题翻译：半导体器件包括通道材料上的栅极绝缘层
公开(公告)号：US09553105B2
公开(公告)日：2017-01-24
申请号：US14995845
申请日：2016-01-14
申请人： Jung-Hwan Lee , Jee-Yong Kim , Dae-Seok Byeon
发明人： Jung-Hwan Lee , Jee-Yong Kim , Dae-Seok Byeon
IPC分类号： H01L27/11 , H01L27/115
CPC分类号： H01L27/11582 , H01L21/28282 , H01L27/11565 , H01L27/1157 , H01L29/42352 , H01L29/66833
摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.
摘要翻译：提供半导体器件。半导体器件包括交替绝缘层和栅电极的堆叠。半导体器件包括在堆叠中的通道凹槽中的沟道材料。半导体器件在通道凹槽中包括在沟道材料上的电荷存储结构。此外，半导体器件在沟道材料上包括栅极绝缘层。栅极绝缘层将沟道材料的一部分切下。还提供了形成半导体器件的相关方法。

2. 发明申请

US20160268301A1 VERTICAL MEMORY DEVICES 有权
标题翻译：垂直存储器件
公开(公告)号：US20160268301A1
公开(公告)日：2016-09-15
申请号：US14988178
申请日：2016-01-05
申请人： Byung-Jin Lee , Jee-Yong Kim , Dae-Seok Byeon
发明人： Byung-Jin Lee , Jee-Yong Kim , Dae-Seok Byeon
IPC分类号： H01L27/115
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575
摘要： A vertical memory device includes a substrate, gate lines, channels, contacts and contact spacers. The gate lines are stacked on top of each other on the substrate. The gate lines are spaced apart from each other in a vertical direction with respect to a top surface of the substrate. The gate lines include step portions that extend in a parallel direction with respect to the top surface of the substrate. The channels extend through the gate lines in the vertical direction. The contacts are on the step portions of the gate lines. The contact spacers are selectively formed along sidewalls of a portion of the contacts.
摘要翻译：垂直存储器件包括衬底，栅极线，沟道，触点和接触间隔物。栅极线在衬底上堆叠在彼此的顶部。栅极线相对于衬底的顶表面在垂直方向上彼此间隔开。栅极线包括相对于衬底的顶表面在平行方向上延伸的台阶部分。通道沿垂直方向延伸穿过栅极线。触点位于栅极线的台阶上。接触垫片选择性地沿接触部分的侧壁形成。

3. 发明申请

US20120142177A1 METHODS OF MANUFACTURING A WIRING STRUCTURE AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造布线结构的方法及制造半导体器件的方法
公开(公告)号：US20120142177A1
公开(公告)日：2012-06-07
申请号：US13299538
申请日：2011-11-18
申请人： Jee-Yong Kim , Joon-Hee Lee , Jeong-Hyuk Choi , Jai-Hyuk Song , Seung-Wan Hong , Hwa-Eon Shin , Jong-Hyun Park , Woo-Jung Kim , Jae-Sung Ahn , Jung-Hwan Lee
发明人： Jee-Yong Kim , Joon-Hee Lee , Jeong-Hyuk Choi , Jai-Hyuk Song , Seung-Wan Hong , Hwa-Eon Shin , Jong-Hyun Park , Woo-Jung Kim , Jae-Sung Ahn , Jung-Hwan Lee
IPC分类号： H01L21/28
CPC分类号： H01L29/78 , H01L21/76826 , H01L21/76828 , H01L21/76834 , H01L21/76849 , H01L27/10855 , H01L27/10885 , H01L27/10894 , H01L27/11543
摘要： A method of manufacturing a wiring structure and a semiconductor device, the method of manufacturing a wiring structure including forming a first insulating interlayer on a substrate; forming a contact plug in an opening in the first insulating interlayer; forming a second insulating interlayer on the contact plug and the first insulating interlayer; removing a portion of the second insulating interlayer to form an opening therethrough such that the opening exposes the contact plug; filling a portion of the opening to form a wiring such that the wiring is electrically connected to the contact plug; and forming a diffusion barrier layer pattern on the wiring such that the diffusion barrier layer pattern fills a remaining portion of the opening.
摘要翻译：一种制造布线结构和半导体器件的方法，包括在基板上形成第一绝缘中间层的布线结构的制造方法; 在所述第一绝缘夹层中的开口中形成接触塞; 在所述接触塞和所述第一绝缘夹层上形成第二绝缘中间层; 去除所述第二绝缘中间层的一部分以形成穿过其中的开口，使得所述开口暴露所述接触插塞; 填充开口的一部分以形成布线，使得布线电连接到接触插塞; 以及在所述布线上形成扩散阻挡层图案，使得所述扩散阻挡层图案填充所述开口的剩余部分。

4. 发明申请

US20080017362A1 Heat exchanger and ventilator having the same 有权
标题翻译：热交换器和通风机具有相同的功能
公开(公告)号：US20080017362A1
公开(公告)日：2008-01-24
申请号：US11599273
申请日：2006-11-15
申请人： Young-Chul Kwon , Sung Woo Kim , Euy Sung Chu , Jee Yong Kim
发明人： Young-Chul Kwon , Sung Woo Kim , Euy Sung Chu , Jee Yong Kim
IPC分类号： F28F13/12
CPC分类号： F24F12/006 , F28D9/00 , F28D9/0062 , F28F9/001 , Y02B30/16 , Y02B30/563
摘要： A heat exchanger usable with a ventilator, the heat exchanger having an improved structure so that air passing through the heat exchanger may be prevented from leaking. The heat exchanger of the general inventive concept includes a heat-exchanging element having a plurality of liners stacked in a uniformly spaced state and a plurality of spacers disposed between the liners to define air passages, and corner guides respectively coupled to corners of the heat-exchanging element. Each of the corner guides includes a guide channel forming a space to receive the corner of the heat-exchanging element so that the corner guides securely come into close contact with the heat-exchanging element, and to minimize a loosening of the corner guide due to an adhesive applied between the heat-exchanging element and the corner guide.
摘要翻译：一种与呼吸机一起使用的热交换器，该热交换器具有改进的结构，使得可以防止通过热交换器的空气泄漏。总体发明构思的热交换器包括具有以均匀间隔的状态堆叠的多个衬垫的热交换元件和设置在衬套之间的多个间隔件以限定空气通道，以及分别连接到热交换器的角部的拐角引导件，交换元素每个拐角引导件包括形成用于接收热交换元件的角部的空间的引导通道，使得角部引导件牢固地与热交换元件紧密接触，并且最小化角引导件的松动，由于施加在热交换元件和拐角引导件之间的粘合剂。

5. 发明授权

US6112546A Air curtain generator for refrigerator 有权
标题翻译：冰箱空气幕发生器
公开(公告)号：US6112546A
公开(公告)日：2000-09-05
申请号：US213866
申请日：1998-12-17
申请人： Jee-Yong Kim
发明人： Jee-Yong Kim
IPC分类号： F24F9/00 , F25D23/02 , F25D11/00
CPC分类号： F25D23/023 , F24F9/00 , F25D23/025 , F24F2011/0056
摘要： An air curtain generator generates an air curtain in a refrigerant compartment of a refrigerator. In the air curtain generator, a sensor senses open and closed states of a refrigerant compartment door. A brushless direct current air curtain fan blows cool air into a refrigerant compartment according to a sensing result of the sensor in order to generate an air curtain in the refrigerant compartment. A direct current power source supplies a direct current driving current to the brushless direct current air curtain fan. A driver drives the brushless direct current air curtain fan. A microcomputer controls an operation of the driver according to the sensing result of the sensor. The air curtain generator maximizes functions of an air curtain generator by applying a brushless direct current air curtain fan having low noise level, low power consumption, and high efficiency thereto. The air curtain generator also controls a rotating speed of a brushless direct current air curtain fan according to a state of the refrigerant compartment to thereby adjust air speed.
摘要翻译：气幕发生器在冰箱的制冷剂室中产生空气幕。在气幕发生器中，传感器感测制冷剂室门的打开和关闭状态。无刷直流气帘风扇根据传感器的感测结果将冷气吹入制冷剂室，以便在制冷剂室中产生气帘。直流电源将直流驱动电流提供给无刷直流气帘风扇。驱动器驱动无刷直流气帘风扇。微型计算机根据传感器的检测结果来控制驾驶员的操作。空气幕发生器通过应用具有低噪声水平，低功耗和高效率的无刷直流气幕风扇，使空气幕发生器的功能最大化。空气幕发生器还根据制冷剂室的状态来控制无刷直流气帘风扇的转速，从而调节空气速度。

6. 发明授权

US5931010A Method and apparatus for controlling a temperature of a cooked food chilling chamber in a refrigerator 失效
标题翻译：用于控制冰箱中的熟食冷藏室的温度的方法和装置
公开(公告)号：US5931010A
公开(公告)日：1999-08-03
申请号：US955307
申请日：1997-10-21
申请人： Jee-Yong Kim
发明人： Jee-Yong Kim
IPC分类号： F25D11/02 , F25D17/06 , F25D23/12 , F25D29/00 , F25D31/00 , G05D23/19 , F25D17/08
CPC分类号： G05D23/1919 , F25D29/00 , G05D23/1931 , F25D17/06 , F25D23/12 , F25D2400/28 , F25D2700/12 , F25D31/005
摘要： A method and an apparatus for controlling a temperature of a cooked food chilling chamber for quick refrigerating cooked food in a refrigerator, is disclosed. A system control section is provided with a load sensing signal of cook chill chamber from a cook chill chamber load sensing section in response to an operating of cook chill mode selecting key by a user. The system control section determines an operating time of a cook chill mode by controlling both a cool air supplying section and a cool air amount controlling section. The system control section stops the cook chill mode by controlling both the cool air supplying section and the cool air amount controlling section in accordance with a cook chill mode stopping key which is operated by the user. Accordingly, an inside temperature of the cook chill chamber is maintained within the range of the most appropriate temperature for keeping the cooked food fresh.
摘要翻译：公开了一种用于控制用于在冰箱中快速冷藏熟食的烹饪食物冷藏室的温度的方法和装置。系统控制部分响应于使用者的烹饪冷却模式选择键的操作，从厨房冷藏室负载感测部分提供烹饪冷藏室的负载感测信号。系统控制部分通过控制冷气供应部分和冷气量控制部分来确定烹饪冷却模式的操作时间。系统控制部根据由使用者操作的厨师冷却模式停止键控制冷气供给部和冷气量控制部，来停止烹饪冷却模式。因此，烹饪冷藏室的内部温度保持在最合适的温度的范围内，以保持熟食新鲜。

7. 发明申请

US20190043880A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190043880A1
公开(公告)日：2019-02-07
申请号：US15928559
申请日：2018-03-22
申请人： Jung Hwan LEE , Jee Yong KIM , Seok Jung YUN , Ji Hyeon LEE
发明人： Jung Hwan LEE , Jee Yong KIM , Seok Jung YUN , Ji Hyeon LEE
IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11565 , H01L23/528 , H01L23/522 , H01L21/768
摘要： A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.

8. 发明授权

US09997537B2 Semiconductor devices including gate insulation layers on channel materials and methods of forming the same 有权
公开(公告)号：US09997537B2
公开(公告)日：2018-06-12
申请号：US15375387
申请日：2016-12-12
申请人： Jung-Hwan Lee , Jee-Yong Kim , Dae-Seok Byeon
发明人： Jung-Hwan Lee , Jee-Yong Kim , Dae-Seok Byeon
IPC分类号： H01L27/11582 , H01L29/66 , H01L29/423 , H01L21/28
CPC分类号： H01L27/11582 , H01L21/28282 , H01L27/11565 , H01L27/1157 , H01L29/42352 , H01L29/66833
摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.

9. 发明申请

US20160268287A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160268287A1
公开(公告)日：2016-09-15
申请号：US15047882
申请日：2016-02-19
申请人： Jong-Hyun PARK , Jee-Yong KIM , Dae-Seok BYEON
发明人： Jong-Hyun PARK , Jee-Yong KIM , Dae-Seok BYEON
IPC分类号： H01L27/115 , H01L29/792
CPC分类号： H01L27/11575 , H01L27/11565 , H01L27/1157 , H01L27/11582
摘要： A semiconductor device includes a substrate including cell and dummy regions, first channel structures on the cell region and extending in a first direction vertical with respect to the substrate, gate lines surrounding outer sidewalls of the first channel structures and extending in a second direction parallel to the substrate, the gate lines being spaced apart from each other along the first direction, cutting lines between the gate lines on the cell region and extending in the second direction, dummy patterns spaced apart from each other along the first direction on the dummy region, the dummy patterns having a stepped shape along a third direction parallel to the top surface of the substrate and perpendicular to the second direction, at least a portion of the dummy patterns including a same conductive material as that in the gate lines, and dummy lines through the dummy patterns.
摘要翻译：一种半导体器件包括：包括单元和虚设区域的基板，单元区域上的第一通道结构，并且相对于基板垂直于第一方向延伸;栅极线，其围绕第一通道结构的外侧壁延伸，并且沿第二方向平行延伸所述基板，所述栅极线沿着所述第一方向彼此间隔开，在所述单元区域上的所述栅极线之间切割并沿所述第二方向延伸，在所述虚拟区域上沿着所述第一方向彼此间隔开的虚拟图案，所述虚拟图案沿着与所述基板的顶面平行且垂直于所述第二方向的第三方向具有台阶状，所述虚设图案的至少一部分包括与所述栅极线相同的导电性材料，虚拟模式。

10. 发明申请

US20120145007A1 Absorption cell and manufacturing method thereof 有权
标题翻译：吸收电池及其制造方法
公开(公告)号：US20120145007A1
公开(公告)日：2012-06-14
申请号：US13317934
申请日：2011-11-01
申请人： Jee Yong Kim , Rae Eun Park
发明人： Jee Yong Kim , Rae Eun Park
IPC分类号： B01D53/04 , C23F1/02 , B05D3/02 , B05D5/00 , B05D3/10
CPC分类号： B01D53/02 , B01D53/04 , B01D2253/102 , B01D2253/104 , B01D2253/25 , B01D2257/304 , B01D2257/40 , B01D2257/406 , B01D2257/708 , B01D2258/0216 , B01J20/08 , B01J20/20 , B01J20/28011 , B01J20/28019 , B01J20/3236 , B01J20/3248 , B01J20/3289 , B01J20/3293
摘要： An absorption cell includes a first absorption layer formed of a first absorbent, and a second absorption layer formed of a second absorbent having a higher density than the first absorbent and coated on the surface of the first absorption layer so as to prevent generation of dust particles from the first absorption layer. The upper surface of the first absorption layer is coated with the second absorption layer formed of the high-density absorbent, thereby preventing generation of minute dust particles and thus preventing secondary contamination.
摘要翻译：吸收单元包括由第一吸收剂形成的第一吸收层和由具有比第一吸收剂更高的密度的第二吸收剂形成的第二吸收层，并且涂覆在第一吸收层的表面上，以防止产生灰尘颗粒从第一吸收层。第一吸收层的上表面涂覆有由高密度吸收剂形成的第二吸收层，从而防止产生微小的灰尘颗粒，从而防止二次污染。

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