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1. 发明授权

US08320175B2 Magnetic booster for magnetic random access memory 有权
标题翻译：磁力助力器用于磁性随机存取存储器
公开(公告)号：US08320175B2
公开(公告)日：2012-11-27
申请号：US12714401
申请日：2010-02-26
申请人： Krishnakumar Mani , Jannier Maximo Roiz Wilson , Kimihiro Satoh
发明人： Krishnakumar Mani , Jannier Maximo Roiz Wilson , Kimihiro Satoh
IPC分类号： G11C11/14
CPC分类号： H01L27/222 , G11C11/1659 , G11C11/1675
摘要： Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.
摘要翻译：公开了一种非易失性磁存储单元，包括：a）可切换磁性元件; b）字线和位线，以激励可切换的磁性元件; 以及c）与所述字线和所述位线中的至少一个相邻定位的磁场增强材料，以增加在其中流动的电流产生的磁场。

2. 发明申请

US20090128966A1 MAGNETIC MEMORY CELL BASED ON A MAGNETIC TUNNEL JUNCTION(MTJ) WITH LOW SWITCHING FIELD SHAPES 审中-公开
标题翻译：基于具有低开关场形状的磁性隧道结（MTJ）的磁记忆体
公开(公告)号：US20090128966A1
公开(公告)日：2009-05-21
申请号：US12249897
申请日：2008-10-10
申请人： Krishnakumar Mani , Jannier Maximo Roiz Wilson
发明人： Krishnakumar Mani , Jannier Maximo Roiz Wilson
IPC分类号： G11B5/33
CPC分类号： G11C11/155
摘要： Embodiments of the invention magnetic memory device, comprising: a magnetic tunnel junction (MTJ) which includes a Magnetic Tunnel Junction (MTJ) stack which has one of a crescent-shaped profile and an elbow-shaped profile in cross-section.
摘要翻译：本发明的磁存储器件的实施例包括：磁隧道结（MTJ），其包括磁隧道结（MTJ）堆叠，其具有月牙形轮廓和肘形轮廓之一的横截面。

3. 发明申请

US20180261269A1 THREE-DIMENSIONAL MRAM CELL CONFIGURATIONS 审中-公开
公开(公告)号：US20180261269A1
公开(公告)日：2018-09-13
申请号：US14588819
申请日：2015-01-02
申请人： Jannier Maximo Roiz Wilson
发明人： Jannier Maximo Roiz Wilson
IPC分类号： G11C11/16 , H01L27/22 , H01L43/02 , H01L43/10 , H01L43/12
CPC分类号： G11C11/161 , G11C11/1659 , H01L27/226 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： The present invention sets forth a new approach to Spin Transfer Torque MRAM that relies on 3D shape anisotropy and bulk-like ferromagnetic material properties in the free-layer to lower the write current and allow high TMR to a great extent independently of cell size and for any desired thermal stability of the cell.

4. 发明授权

US07787289B2 MRAM design with local write conductors of reduced cross-sectional area 有权
标题翻译： MRAM设计与局部写导体横截面积减小
公开(公告)号：US07787289B2
公开(公告)日：2010-08-31
申请号：US11949693
申请日：2007-12-03
申请人： Krishnakumar Mani , Jannier Maximo Roiz Wilson , Anil Gupta , Kimihiro Satoh
发明人： Krishnakumar Mani , Jannier Maximo Roiz Wilson , Anil Gupta , Kimihiro Satoh
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , G11C7/18 , Y10S977/935
摘要： Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory cells, wherein at least some of the write conductors have a reduced cross-sectional area in the vicinity of a group of memory cells.
摘要翻译：本发明的实施例公开了一种具有分组成多个磁存储器单元的MRAM器件和用于承载写入电流以写入存储器单元的写导体，其中写入导体中的至少一些具有减小的横截面积一组存储单元的附近。

5. 发明申请

US20220181061A1 Warped Magnetic Tunnel Junctions and Bit-Patterned media 有权
公开(公告)号：US20220181061A1
公开(公告)日：2022-06-09
申请号：US17114965
申请日：2020-12-08
申请人： Jannier Maximo Roiz-Wilson
发明人： Jannier Maximo Roiz-Wilson
IPC分类号： H01F10/32 , H01L43/04 , G11B5/39
摘要： The present invention comprises Magnetic Tunnel Junctions and Bit-Patterned Media with a warped geometry with the purpose of attaining large thermal stability factors and dramatically increasing the scalability of the magnetic bits while still allowing the reduction of switching current density and switching magnetic field, and also increasing switching speed. The warped shape allows providing thermal stability to the bits through dynamic exchange energy barrier and also by providing additional net magnetic anisotropy through shape-induced reduction of the demagnetization field. The dynamic exchange energy barrier in turn allows engineering the damping torque and the free-layer's magnetic parameters to a much larger extent than the current planar technology. It also allows much faster magnetic-field-induced switching of patterned bits than it is possible with current hard disk drive technology, through the use of precession torque instead of conventional damping torque.

6. 发明授权

US09093139B2 Counterbalanced-switch MRAM 有权
标题翻译：平衡开关MRAM
公开(公告)号：US09093139B2
公开(公告)日：2015-07-28
申请号：US13442829
申请日：2012-04-09
申请人： Jannier Maximo Roiz Wilson
发明人： Jannier Maximo Roiz Wilson
IPC分类号： G11C11/00
CPC分类号： G11C11/00 , G11C11/15
摘要： A magnetic memory cell is provided. The cell comprises first and second free layers; and an intermediate layer separating the first and second free layers, wherein the first and second free layers are magnetostatically coupled.
摘要翻译：提供磁存储单元。该电池包括第一和第二自由层; 以及分离第一和第二自由层的中间层，其中第一和第二自由层被静磁耦合。

7. 发明申请

US20150023096A1 COUNTERBALANCED-SWITCH MRAM 有权
标题翻译：反平开关MRAM
公开(公告)号：US20150023096A1
公开(公告)日：2015-01-22
申请号：US13442829
申请日：2012-04-09
申请人： Jannier Maximo Roiz Wilson
发明人： Jannier Maximo Roiz Wilson
IPC分类号： G11C11/15
CPC分类号： G11C11/00 , G11C11/15
摘要： A magnetic memory cell is provided. The cell comprises first and second free layers; and an intermediate layer separating the first and second free layers, wherein the first and second free layers are magnetostatically coupled.
摘要翻译：提供磁存储单元。该电池包括第一和第二自由层; 以及分离第一和第二自由层的中间层，其中第一和第二自由层被静磁耦合。

8. 发明申请

US20100220524A1 MAGNETIC BOOSTER FOR MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器的磁力驱动器
公开(公告)号：US20100220524A1
公开(公告)日：2010-09-02
申请号：US12714401
申请日：2010-02-26
申请人： Krishnakumar Mani , Jannier Maximo Roiz Wilson , Kimihiro Satoh
发明人： Krishnakumar Mani , Jannier Maximo Roiz Wilson , Kimihiro Satoh
IPC分类号： G11C11/14 , H01L21/00
CPC分类号： H01L27/222 , G11C11/1659 , G11C11/1675
摘要： Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.
摘要翻译：公开了一种非易失性磁存储单元，包括：a）可切换磁性元件; b）字线和位线，以激励可切换的磁性元件; 以及c）与所述字线和所述位线中的至少一个相邻定位的磁场增强材料，以增加在其中流动的电流产生的磁场。

9. 发明申请

US20100219492A1 LOW SWITCHING FIELD LOW SHAPE SENSITIVITY MRAM CELL 审中-公开
标题翻译：低开关场低形状灵敏度MRAM单元
公开(公告)号：US20100219492A1
公开(公告)日：2010-09-02
申请号：US12714395
申请日：2010-02-26
申请人： Jannier Maximo Roiz Wilson
发明人： Jannier Maximo Roiz Wilson
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F41/305 , H01L43/12
摘要： Disclosed is a Magnetic Tunnel Junction (MTJ) stack usable in a nonvolatile magnetic memory array of MTJ stacks, the MTJ stack comprising: a) a fixed ferromagnetic layer having its magnetic moment fixed in a preferred direction in the presence of an applied magnetic field caused by a current; b) an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer; and c) a free ferromagnetic layer in contact with the insulating tunnel barrier layer, the free ferromagnetic layer comprising a synthetic anti-ferromagnet (SAF) stack comprising i) at least three ferromagnetic layers arranged anti-ferromagnetically relative to the next, and ii) at least two coupling layers, wherein the at least three ferromagnetic layers are separated by the at least two coupling layers.
摘要翻译：公开了一种可用于MTJ堆叠的非易失性磁存储器阵列中的磁隧道结（MTJ）堆叠，MTJ堆叠包括：a）固定的铁磁层，其磁矩在存在施加的磁场的情况下以优选的方向固定，由现在 b）与固定铁磁层接触的绝缘隧道势垒层; 并且c）与所述绝缘隧道阻挡层接触的自由铁磁层，所述自由铁磁层包含合成抗铁磁体（SAF）堆叠，所述叠层包括i）至少三个相对于下一个反铁磁层布置的铁磁层，以及ii）至少两个耦合层，其中所述至少三个铁磁层由所述至少两个耦合层隔开。

10. 发明申请

US20090141542A1 MRAM DESIGN WITH LOCAL WRITE CONDUCTORS OF REDUCED CROSS-SECTIONAL AREA 有权
标题翻译： MRAM设计与减少交叉区域的本地写入导体
公开(公告)号：US20090141542A1
公开(公告)日：2009-06-04
申请号：US11949693
申请日：2007-12-03
申请人： Krishnakumar Mani , Jannier Maximo Roiz Wilson , Anil Gupta , Kimihiro Satoh
发明人： Krishnakumar Mani , Jannier Maximo Roiz Wilson , Anil Gupta , Kimihiro Satoh
IPC分类号： G11C11/02
CPC分类号： G11C11/15 , G11C7/18 , Y10S977/935
摘要： Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory cells, wherein at least some of the write conductors have a reduced cross-sectional area in the vicinity of a group of memory cells.
摘要翻译：本发明的实施例公开了一种具有分组成多个磁存储器单元的MRAM器件和用于承载写入电流以写入存储器单元的写导体，其中写入导体中的至少一些具有减小的横截面积一组存储单元的附近。

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