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    • 2. 依法登记的发明
    • Variable lateral quantum confinement transistor
    • 可变横向量子限制晶体管
    • USH1570H
    • 1996-08-06
    • US44783
    • 1993-03-31
    • Robert A. LuxJames F. Harvey
    • Robert A. LuxJames F. Harvey
    • H01L29/66H01L29/06
    • B82Y10/00H01L29/66977
    • A quantum interference device in the form of a variable lateral confinement resonant tunneling transistor having a quantum waveguide structure including a primary current transmission path defined by a region between source and drain electrodes and where there is a resonance region therebetween in which quantum interference of tunneling wave functions establish a resonance tunneling condition that extends beyond the primary current path. Upon the application of a voltage across the drain and source electrodes, a tunneling current can be made to flow. A gate electrode formed on the quantum well structure remote from the primary current transmission path includes a variable depletion region thereunder or an electrostatic pinch off region, the size of which is a function of the magnitude of the bias voltage applied thereto. The size of the depletion region or the pinch off region affects the dimensions of the resonance region and accordingly the current flow between the source and drain electrodes as a result of a change in the energy and momentum conditions for resonance tunneling.
    • 一种具有量子波导结构形式的量子干涉装置,该量子波导结构包括由源极和漏极之间的区域限定的初级电流传输路径,其中在其间存在隧道波的量子干涉 功能建立了超越初级电流路径的谐振隧道状态。 当在漏极和源极之间施加电压时,可以使隧道电流流动。 形成在远离初级电流传输路径的量子阱结构上的栅电极包括其下的可变耗尽区或静电夹断区,其大小是施加到其上的偏置电压的大小的函数。 耗尽区域或夹断区域的大小由于谐振隧道的能量和动量条件的变化而影响谐振区域的尺寸,并因此影响源极和漏极之间的电流。