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1. 发明授权

US09422638B2 Silicon substrate including an edge portion, epitaxial structure including the same, and method of manufacturing the silicon substrate 有权
标题翻译：包括边缘部分的硅衬底，包括其的外延结构以及制造硅衬底的方法
公开(公告)号：US09422638B2
公开(公告)日：2016-08-23
申请号：US13614315
申请日：2012-09-13
申请人： Jun-youn Kim , Jae-Kyun Kim , Su-hee Chae , Hyun-gi Hong
发明人： Jun-youn Kim , Jae-Kyun Kim , Su-hee Chae , Hyun-gi Hong
IPC分类号： C30B25/18 , H01L21/02 , C30B29/06 , C30B29/40
CPC分类号： C30B25/186 , C30B29/06 , C30B29/403 , H01L21/02381 , H01L21/0243 , H01L21/0254 , H01L21/02639 , H01L21/02658
摘要： Crack formation and propagation in a silicon substrate may be reduced by forming a crack reducing portion. The silicon substrate includes a silicon main portion and a silicon edge portion formed around the silicon main portion. The crack reducing portion is formed on the silicon edge portion of the silicon substrate such that the directions of crystal faces in the crack reducing portion are randomly oriented.
摘要翻译：可以通过形成裂纹减少部分来减少硅衬底中的裂纹形成和传播。硅基板包括硅主体部分和形成在硅主体部分周围的硅边缘部分。在硅基板的硅边缘部分上形成裂纹减少部分，使得裂纹缩小部分中的晶面的方向随机取向。

2. 发明授权

US09337381B2 Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure 有权
标题翻译：半导体缓冲结构，包括半导体缓冲结构的半导体器件，以及使用半导体缓冲结构制造半导体器件的方法
公开(公告)号：US09337381B2
公开(公告)日：2016-05-10
申请号：US14484456
申请日：2014-09-12
申请人： Jun-youn Kim , Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Young-soo Park , Su-hee Chae
发明人： Jun-youn Kim , Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Young-soo Park , Su-hee Chae
IPC分类号： H01L21/00 , H01L33/00 , H01L33/12 , H01L21/02 , H01L33/32
CPC分类号： H01L33/0025 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/32
摘要： A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.
摘要翻译：半导体缓冲结构包括硅衬底，形成在硅衬底上的成核层和形成在成核层上的缓冲层。缓冲层包括由具有均匀组成比的氮化物半导体材料形成的第一层，由与第一层上的成核层相同的材料形成的第二层和由相同组成比的相同材料形成的第三层作为第二层的第一层。

3. 发明授权

US09257599B2 Semiconductor light emitting device including hole injection layer 有权
标题翻译：半导体发光器件包括空穴注入层
公开(公告)号：US09257599B2
公开(公告)日：2016-02-09
申请号：US14288824
申请日：2014-05-28
申请人： Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Young-soo Park , Young-jo Tak
发明人： Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Young-soo Park , Young-jo Tak
IPC分类号： H01L21/00 , H01L29/06 , H01L33/00 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/12
CPC分类号： H01L33/06 , H01L33/007 , H01L33/12 , H01L33/14 , H01L33/32
摘要： According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.
摘要翻译：根据示例性实施例，半导体发光器件包括第一半导体层，第一半导体层上的凹坑放大层，凹坑放大层上的有源层，空穴注入层和空穴注入层上的第二半导体层。第一半导体层掺杂有第一导电类型。凹坑扩大层的上表面和活性层的侧表面限定了在位错上具有倾斜表面的凹坑。凹坑是反锥形空间。空穴注入层位于有源层的顶表面和凹坑的倾斜表面上。第二半导体层掺杂与第一导电类型不同的第二导电类型。

4. 发明授权

US09136430B2 Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure 有权
标题翻译：半导体缓冲结构，包括该半导体缓冲结构的半导体器件以及使用半导体缓冲结构的半导体器件的制造方法
公开(公告)号：US09136430B2
公开(公告)日：2015-09-15
申请号：US13963476
申请日：2013-08-09
申请人： Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Jae-won Lee , Hyo-ji Choi
发明人： Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Jae-won Lee , Hyo-ji Choi
IPC分类号： H01L33/12 , H01L21/02 , H01L33/00
CPC分类号： H01L33/12 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L33/0066 , H01L33/0079
摘要： A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlxInyGa1-x-yN (0≦x
摘要翻译：制造半导体器件的方法包括形成硅衬底，在硅衬底上形成缓冲层，并在缓冲层上形成氮化物半导体层。缓冲层包括第一层，第二层和第三层。第一层包括Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆第二层形成在第一层上，包括Al x In y Ga 1-x-y N（0＆nlE; x <1,0＆lt; nlE; y <1,0

5. 发明申请

US20130334495A1 SUPERLATTICE STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：超导结构，包括其的半导体器件以及制造半导体器件的方法
公开(公告)号：US20130334495A1
公开(公告)日：2013-12-19
申请号：US13837992
申请日：2013-03-15
申请人： Dae-ho LIM , Joo-sung KIM , Jae-kyun KIM , Young-jo TAK
发明人： Dae-ho LIM , Joo-sung KIM , Jae-kyun KIM , Young-jo TAK
IPC分类号： H01L29/12 , H01L21/02
CPC分类号： H01L29/122 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003
摘要： A superlattice structure, and a semiconductor device including the same, include a plurality of pairs of layers are in a pattern repeated at least two times, in which a first layer and a second layer constitute a pair, the first layer is formed of AlxInyGa1-x-yN (where 0≦x and y≦1), the second layer is formed of AlaInbGa1-a-bN (where 0≦a, b≦1 and x≠a), the first and second layers have the same thickness, and a total thickness of each of the plurality of pairs of layers is different than each other.
摘要翻译：超晶格结构以及包括该超晶格结构的半导体器件包括多层重叠至少两次的图案，其中第一层和第二层构成一对，第一层由Al x In y Ga 1- x-yN（其中0 @ x和y @ 1），第二层由AlaInbGa1-a-bN（其中0 @ a，b @ 1和x

6. 发明申请

US20080064397A1 APPARATUS AND METHOD FOR RESELECTING CELL IN PORTABLE TERMINAL 审中-公开
标题翻译：用于在便携式终端中检测细胞的装置和方法
公开(公告)号：US20080064397A1
公开(公告)日：2008-03-13
申请号：US11854441
申请日：2007-09-12
申请人： Sang-Joon PARK , Jae-Kyun Kim
发明人： Sang-Joon PARK , Jae-Kyun Kim
IPC分类号： H04Q7/22
CPC分类号： H04W36/08 , H04W36/26 , H04W48/20
摘要： An apparatus and a method of a portable terminal using a high speed downlink packet data service, for reselecting a cell that supports HSDPA, are provided, which include a communication unit for receiving a broadcast message, a broadcast message reading unit for determining whether there is a cell which supports the HSDPA service by reading the received broadcast message, and sending the result to the control unit, and the control unit for controlling the communication unit and the broadcast message reading unit.
摘要翻译：提供了一种使用高速下行链路分组数据业务的便携式终端的装置和方法，用于重新选择支持HSDPA的小区，其包括用于接收广播消息的通信单元，广播消息读取单元，用于确定是否存在通过读取接收到的广播消息来支持HSDPA服务的单元，并将结果发送到控制单元，以及用于控制通信单元和广播消息读取单元的控制单元。

7. 发明申请

US20150060762A1 SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING HOLE INJECTION LAYER 有权
标题翻译：半导体发光器件，包括孔注入层
公开(公告)号：US20150060762A1
公开(公告)日：2015-03-05
申请号：US14288824
申请日：2014-05-28
申请人： Jae-kyun KIM , Joo-sung KIM , Jun-youn KIM , Young-soo PARK , Young-jo TAK
发明人： Jae-kyun KIM , Joo-sung KIM , Jun-youn KIM , Young-soo PARK , Young-jo TAK
IPC分类号： H01L33/00 , H01L33/06
CPC分类号： H01L33/06 , H01L33/007 , H01L33/12 , H01L33/14 , H01L33/32
摘要： According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.
摘要翻译：根据示例性实施例，半导体发光器件包括第一半导体层，第一半导体层上的凹坑放大层，凹坑放大层上的有源层，空穴注入层和空穴注入层上的第二半导体层。第一半导体层掺杂有第一导电类型。凹坑扩大层的上表面和活性层的侧表面限定了在位错上具有倾斜表面的凹坑。凹坑是反锥形空间。空穴注入层位于有源层的顶表面和凹坑的倾斜表面上。第二半导体层掺杂与第一导电类型不同的第二导电类型。

8. 发明申请

US20140042492A1 SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE USING THE SEMICONDUCTOR BUFFER STRUCTURE 有权
标题翻译：半导体缓冲器结构，半导体器件和使用半导体缓冲器结构制造半导体器件的方法
公开(公告)号：US20140042492A1
公开(公告)日：2014-02-13
申请号：US13835704
申请日：2013-03-15
申请人： Young-jo TAK , Jae-kyun KIM , Joo-sung KIM , Jun-youn KIM , Jae-won LEE , Hyo-ji CHOI
发明人： Young-jo TAK , Jae-kyun KIM , Joo-sung KIM , Jun-youn KIM , Jae-won LEE , Hyo-ji CHOI
IPC分类号： H01L29/267 , H01L21/02
CPC分类号： H01L29/267 , G11C11/161 , H01L21/02104 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L29/2003
摘要： A semiconductor buffer structure may include a silicon substrate and a buffer layer that is formed on the silicon substrate. The buffer layer may include a first layer, a second layer formed on the first layer, and a third layer formed on the second layer. The first layer may include AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and have a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer may include AlxInyGa1-x-yN (0≦x
摘要翻译：半导体缓冲结构可以包括硅衬底和形成在硅衬底上的缓冲层。缓冲层可以包括第一层，形成在第一层上的第二层和形成在第二层上的第三层。第一层可以包括Al x In y Ga 1-x-y N（0 @ x @ 1，0 @ y @ 1，x @ x + y @ 1），并且具有小于硅衬底的晶格常数LP0的晶格常数LP1。第二层可以包括Al x In y Ga 1-x-y N（0 @ x <1,0

9. 发明申请

US20130334496A1 SEMICONDUCTOR DEVICE, SUPERLATTICE LAYER USED IN THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件，其中使用的超级层以及制造半导体器件的方法
公开(公告)号：US20130334496A1
公开(公告)日：2013-12-19
申请号：US13838963
申请日：2013-03-15
申请人： Jae-kyun KIM , Jun-youn KIM , Young-jo TAK
发明人： Jae-kyun KIM , Jun-youn KIM , Young-jo TAK
IPC分类号： H01L29/205 , H01L21/02
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003
摘要： A semiconductor device includes a silicon substrate; a nitride nucleation layer disposed on the silicon substrate; at least one superlattice layer disposed on the nitride nucleation layer; and at least one gallium nitride-based semiconductor layer disposed on the superlattice layer. The at least one superlattice layer includes a stack of complex layers, each complex layer including a first layer and a second layer such that each of the complex layers has a plurality of nitride semiconductor layers having different compositions, at least one of the plurality of nitride semiconductor layers having a different thickness based on a location of the at least one nitride semiconductor layer within the stack, and at least one stress control layer having a thickness greater than a critical thickness for pseudomorphic growth.
摘要翻译：半导体器件包括硅衬底; 设置在硅衬底上的氮化物成核层; 设置在所述氮化物成核层上的至少一个超晶格层; 以及设置在超晶格层上的至少一个氮化镓基半导体层。所述至少一个超晶格层包括一叠复合层，每个复合层包括第一层和第二层，使得每个复合层具有多个具有不同组成的氮化物半导体层，多个氮化物中的至少一个基于堆叠内的至少一个氮化物半导体层的位置具有不同厚度的半导体层，以及至少一个厚度大于伪晶生长的临界厚度的应力控制层。

10. 发明授权

US08315625B2 Apparatus and method for selecting mobile communication system in a portable terminal 有权
标题翻译：用于在便携式终端中选择移动通信系统的装置和方法
公开(公告)号：US08315625B2
公开(公告)日：2012-11-20
申请号：US12182647
申请日：2008-07-30
申请人： Byeong-Woo Kim , Chul-Hwan Lee , Jae-Kyun Kim
发明人： Byeong-Woo Kim , Chul-Hwan Lee , Jae-Kyun Kim
IPC分类号： H04W4/00 , H04B1/38 , H04M1/00
CPC分类号： H04W48/16 , H04W52/0229 , H04W52/0241 , H04W88/06 , Y02D70/1222
摘要： A mobile communication system selection is disclosed. A method for selecting a mobile communication system of a portable terminal includes driving a first timer; checking whether a Mobile Country Code (MCC) of a region where the portable terminal is located is obtained by searching for a network until the first timer expires; when the MCC is obtained before the first timer expires, storing the obtained MCC to a previous MCC list; performing a first checking operation for checking whether the obtained MCC belongs to a list of countries supporting only a first mobile communication system; and obtaining a service of the first mobile communication system by searching for only the first mobile communication system when the obtained MCC belongs to the list of the countries supporting only the first mobile communication system.
摘要翻译：公开了一种移动通信系统选择。一种用于选择便携式终端的移动通信系统的方法包括：驱动第一定时器; 通过搜索网络直到第一定时器到期来检查便携式终端所在区域的移动国家代码（MCC）是否获得; 当在第一定时器到期之前获得MCC时，将获得的MCC存储到先前的MCC列表; 执行用于检查所获得的MCC是否属于仅支持第一移动通信系统的国家列表的第一检查操作; 并且当获得的MCC属于仅支持第一移动通信系统的国家的列表时，仅通过搜索第一移动通信系统来获得第一移动通信系统的服务。

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