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1. 发明授权

US06316349B1 Method for forming contacts of semiconductor devices 失效
标题翻译：形成半导体器件的触点的方法
公开(公告)号：US06316349B1
公开(公告)日：2001-11-13
申请号：US09438048
申请日：1999-11-10
申请人： Jeong Ho Kim , Jae Ok Ryu , Ja Chun Ku , Jin Woong Kim , Si Bum Kim , Su Jin Oh
发明人： Jeong Ho Kim , Jae Ok Ryu , Ja Chun Ku , Jin Woong Kim , Si Bum Kim , Su Jin Oh
IPC分类号： H01L214763
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/3144 , H01L21/76801 , H01L21/76834 , H01L29/6656 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method for forming contacts of a semiconductor device. In accordance with the invention, an oxidized silicon-rich nitride film is used as an etch barrier film for a self-aligned contact (SAC) process. Accordingly, the oxidized silicon-rich nitride film exhibits less stress, as compared to an LPCVD nitride film, thereby being capable of avoiding a degradation in the characteristics of the devices finally produced or distortion of the wafer used. There is no formation of cracks occurring in the nitride film during a subsequent thermal process. It is also unnecessary to conduct an additional reflection preventing process. Accordingly, the entire process is simplified. It is also possible to improve a decrease in the operating speed of the devices due to a parasitic capacitance existing among conductive lines because the oxidized silicon-rich nitride film has a low dielectric constant, as compared to nitride films. No damage occurs in the oxidized silicon-rich nitride film, so that it is possible to prevent the substrate from being damaged.
摘要翻译：公开了一种形成半导体器件的接触的方法。根据本发明，氧化富硅氮化物膜用作自对准接触（SAC）工艺的蚀刻阻挡膜。因此，与LPCVD氮化物膜相比，氧化富硅氮化物膜的应力显示较小，从而能够避免最终产生的器件的特性劣化或所使用的晶片的变形。在随后的热处理中，在氮化物膜中不会形成裂缝。也不需要进行附加的防反射处理。因此，整个过程被简化。与氮化膜相比，由于氧化富硅的氮化物膜具有低的介电常数，所以可以改善由于导电线中存在的寄生电容而引起的器件的工作速度的降低。在氧化富硅的氮化物膜中不会发生损伤，从而可以防止衬底损坏。

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