专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100237349A1 LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATING METHOD THEREOF 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20100237349A1
公开(公告)日：2010-09-23
申请号：US12789067
申请日：2010-05-27
申请人： Byung Chul AHN , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul AHN , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： H01L33/16
CPC分类号： G02F1/134363 , G02F1/1368 , G02F2001/136231 , G02F2001/136236
摘要： Disclosed is a thin film transistor substrate for a fringe filed switching type liquid crystal display device, and a fabrication method thereof, that reduces the number of required mask processes, and thus improves fabrication efficiency. The fabrication method involves three mask processes, wherein the masks are partial transmitting masks, and the resulting photo-resist patterns have varying thicknesses. By having photo-resist layers of varying thicknesses, structures can be formed in multiple etching steps using the same photo-resist pattern by incrementally removing the photo-resist according to its thickness. The thin film transistor substrate has a common line, a common electrode, a gate line and a gate electrode formed directly on the substrate. The common electrode overlaps the pixel electrode in the pixel area.
摘要翻译：公开了一种用于边缘场开关型液晶显示装置的薄膜晶体管基板及其制造方法，其减少了所需的掩模处理次数，从而提高了制造效率。制造方法涉及三个掩模工艺，其中掩模是部分透射掩模，并且所得光刻胶图案具有变化的厚度。通过具有不同厚度的光致抗蚀剂层，可以通过使用相同光刻胶图案的多个蚀刻步骤，通过根据其厚度逐渐去除光致抗蚀剂来形成结构。薄膜晶体管基板具有直接形成在基板上的公共线，公共电极，栅极线和栅电极。公共电极与像素区域中的像素电极重叠。

2. 发明申请

US20090284676A1 Thin film transistor substrate and fabricating method thereof, liquid crystal display panel using the same and fabricating method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法，使用其的液晶显示面板及其制造方法
公开(公告)号：US20090284676A1
公开(公告)日：2009-11-19
申请号：US12458784
申请日：2009-07-22
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1368
CPC分类号： G02F1/136227 , G02F2001/136231 , H01L27/124 , H01L27/1288
摘要： A thin film transistor substrate and a fabricating method thereof; and a liquid crystal display panel employing the same and a fabricating method thereof for simplifying a process are disclosed. A thin film transistor substrate, including: a gate line on a substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel hole in the pixel area; a pixel electrode made of a transparent conductive film on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive film.
摘要翻译：一种薄膜晶体管基板及其制造方法; 并且公开了一种使用该液晶显示面板的液晶显示面板及其制造方法，用于简化工艺。一种薄膜晶体管衬底，包括：衬底上的栅极线; 与栅极线交叉的数据线，其间具有栅极绝缘膜，以限定像素区域; 像素区域中的像素孔; 像素区域中的像素孔中的栅极绝缘膜上的由透明导电膜构成的像素电极; 以及薄膜晶体管，其包括连接到所述栅极线的栅电极，连接到所述数据线的源电极，连接到所述像素电极的漏电极以及限定所述源电极和所述漏电极之间的沟道的半导体层，其中，半导体层与包括数据线，源电极和漏电极的源极/漏极金属图案重叠; 其中，所述漏电极从所述半导体层向所述像素电极的上部突出，所述漏电极与所述像素电极连接; 并且其中半导体层从其与透明导电膜重叠的地方去除。

3. 发明授权

US07105367B2 Method of manufacturing array substrate for liquid crystal display device 有权
标题翻译：制造液晶显示装置用阵列基板的方法
公开(公告)号：US07105367B2
公开(公告)日：2006-09-12
申请号：US10964970
申请日：2004-10-15
申请人： Jae-Jun Ahn , Hee-Young Kwack
发明人： Jae-Jun Ahn , Hee-Young Kwack
IPC分类号： H01L21/00
CPC分类号： G02F1/1309 , G02F1/136286 , G02F2001/136231 , G02F2202/22
摘要： A method of manufacturing an array substrate for a liquid crystal display device includes forming a first line on a substrate; the first line having one or more first holes; forming a first insulating layer on the first line; forming a second line on the first insulating layer, the second line crossing the first line; forming a second insulating layer on the second line, the second insulating layer including one or more second holes; and forming a conductive pattern in each of the second holes, wherein the first holes are formed at a crossing portion of the first and the second lines, and the second holes at the crossing portion are disposed in the first holes.
摘要翻译：制造液晶显示装置用阵列基板的方法包括：在基板上形成第一线; 所述第一线具有一个或多个第一孔; 在第一线上形成第一绝缘层; 在所述第一绝缘层上形成第二线，所述第二线穿过所述第一线; 在所述第二管线上形成第二绝缘层，所述第二绝缘层包括一个或多个第二孔; 并且在每个所述第二孔中形成导电图案，其中所述第一孔形成在所述第一和第二线的交叉部分处，并且所述交叉部分处的所述第二孔设置在所述第一孔中。

4. 发明授权

US06734048B2 Thin film transistor liquid crystal display and fabrication method thereof 有权
标题翻译：薄膜晶体管液晶显示及其制造方法
公开(公告)号：US06734048B2
公开(公告)日：2004-05-11
申请号：US10142960
申请日：2002-05-13
申请人： Jae Jun Ahn
发明人： Jae Jun Ahn
IPC分类号： H01L2100
CPC分类号： H01L29/78669 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A method of fabricating a thin film transistor-liquid crystal display (TFT-LCD), which includes providing a substrate with a plurality of pixels. A thin film transistor (TFT) is formed in each of the plurality of pixels. A passivation layer is deposited over the substrate, and a pixel electrode is formed in each of the plurality of pixels. A TFT-LCD device, which includes a substrate having a plurality of pixels, a TFT in each of the plurality of pixels, and a first pixel electrode formed in each of the plurality of pixels. The first electrode pixel is connected with a drain electrode of the TFT. The TFT includes a gate electrode and an insulating layer on the substrate, an active layer formed on the insulating layer, source and drain electrodes formed over the gate electrode and at opposing ends of the active layer, and a passivation layer exposing a part of the drain electrode.
摘要翻译：一种制造薄膜晶体管 - 液晶显示器（TFT-LCD）的方法，其包括向多个像素提供衬底。在多个像素中的每一个中形成薄膜晶体管（TFT）。在衬底上沉积钝化层，并且在多个像素中的每一个中形成像素电极。一种TFT-LCD装置，其包括具有多个像素的基板，在所述多个像素中的每一个中的TFT，以及形成在所述多个像素中的每一个中的第一像素电极。第一电极像素与TFT的漏电极连接。 TFT包括在基板上的栅电极和绝缘层，形成在绝缘层上的有源层，形成在栅电极上方和在有源层的相对端的源电极和漏电极，以及钝化层，漏电极。

5. 发明授权

US08189162B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08189162B2
公开(公告)日：2012-05-29
申请号：US12789067
申请日：2010-05-27
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1343 , G02F1/1345
CPC分类号： G02F1/134363 , G02F1/1368 , G02F2001/136231 , G02F2001/136236
摘要： Disclosed is a thin film transistor substrate for a fringe filed switching type liquid crystal display device, and a fabrication method thereof, that reduces the number of required mask processes, and thus improves fabrication efficiency. The fabrication method involves three mask processes, wherein the masks are partial transmitting masks, and the resulting photo-resist patterns have varying thicknesses. By having photo-resist layers of varying thicknesses, structures can be formed in multiple etching steps using the same photo-resist pattern by incrementally removing the photo-resist according to its thickness. The thin film transistor substrate has a common line, a common electrode, a gate line and a gate electrode formed directly on the substrate. The common electrode overlaps the pixel electrode in the pixel area.
摘要翻译：公开了一种用于边缘场开关型液晶显示装置的薄膜晶体管基板及其制造方法，其减少了所需的掩模处理次数，从而提高了制造效率。制造方法涉及三个掩模工艺，其中掩模是部分透射掩模，并且所得光刻胶图案具有变化的厚度。通过具有不同厚度的光致抗蚀剂层，可以通过使用相同光刻胶图案的多个蚀刻步骤，通过根据其厚度逐渐去除光致抗蚀剂来形成结构。薄膜晶体管基板具有直接形成在基板上的公共线，公共电极，栅极线和栅电极。公共电极与像素区域中的像素电极重叠。

6. 发明授权

US07999906B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07999906B2
公开(公告)日：2011-08-16
申请号：US12585845
申请日：2009-09-25
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/13 , G02F1/136 , G02F1/1345
CPC分类号： G02F1/1368 , G02F1/13458 , G02F2001/136236
摘要： A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel electrode formed of a transparent conductive film in a pixel hole passing through the gate insulating film in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode; and wherein the drain electrode protrudes from the semiconductor layer toward inside of the pixel electrode to be connected to the pixel electrode.
摘要翻译：一种液晶显示装置，包括：第一和第二基板; 第一基板上的栅极线; 与栅极线交叉的数据线，其间具有栅极绝缘膜，以限定像素区域; 在通过像素区域中的栅极绝缘膜的像素孔中由透明导电膜形成的像素电极; 以及薄膜晶体管，其包括栅电极，源电极，漏电极和限定在所述源电极和所述漏电极之间的沟道的半导体层，其中所述半导体层与包括所述数据线的源极和漏极金属图案重叠源电极和漏电极; 并且其中所述漏电极从所述半导体层突出到所述像素电极的内部以连接到所述像素电极。

7. 发明授权

US07859605B2 Thin film transistor substrate and fabricating method thereof, liquid crystal display panel using the same and fabricating method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法，使用其的液晶显示面板及其制造方法
公开(公告)号：US07859605B2
公开(公告)日：2010-12-28
申请号：US12458784
申请日：2009-07-22
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/136
CPC分类号： G02F1/136227 , G02F2001/136231 , H01L27/124 , H01L27/1288
摘要： A thin film transistor substrate and a fabricating method thereof; and a liquid crystal display panel employing the same and a fabricating method thereof for simplifying a process are disclosed. A thin film transistor substrate, including: a gate line on a substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel hole in the pixel area; a pixel electrode made of a transparent conductive film on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive film.
摘要翻译：一种薄膜晶体管基板及其制造方法; 并且公开了一种使用该液晶显示面板的液晶显示面板及其制造方法，用于简化工艺。一种薄膜晶体管衬底，包括：衬底上的栅极线; 与栅极线交叉的数据线，其间具有栅极绝缘膜，以限定像素区域; 像素区域中的像素孔; 像素区域中的像素孔中的栅极绝缘膜上的由透明导电膜构成的像素电极; 以及薄膜晶体管，其包括连接到所述栅极线的栅电极，连接到所述数据线的源电极，连接到所述像素电极的漏电极以及限定所述源电极和所述漏电极之间的沟道的半导体层，其中，半导体层与包括数据线，源电极和漏电极的源极/漏极金属图案重叠; 其中，所述漏电极从所述半导体层向所述像素电极的上部突出，所述漏电极与所述像素电极连接; 并且其中半导体层从其与透明导电膜重叠的地方去除。

8. 发明授权

US07616284B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07616284B2
公开(公告)日：2009-11-10
申请号：US11168458
申请日：2005-06-29
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1345 , G02F1/1343 , G02F1/136
CPC分类号： G02F1/1368 , G02F1/13458 , G02F2001/136236
摘要： A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel electrode formed of a transparent conductive film in a pixel hole passing through the gate insulating film in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode; and wherein the drain electrode protrudes from the semiconductor layer toward inside of the pixel electrode to be connected to the pixel electrode.
摘要翻译：一种液晶显示装置，包括：第一和第二基板; 第一基板上的栅极线; 与栅极线交叉的数据线，其间具有栅极绝缘膜，以限定像素区域; 在通过像素区域中的栅极绝缘膜的像素孔中由透明导电膜形成的像素电极; 以及薄膜晶体管，其包括栅电极，源电极，漏电极和限定在所述源电极和所述漏电极之间的沟道的半导体层，其中所述半导体层与包括所述数据线的源极和漏极金属图案重叠源电极和漏电极; 并且其中所述漏电极从所述半导体层突出到所述像素电极的内部以连接到所述像素电极。

9. 发明授权

US08179510B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08179510B2
公开(公告)日：2012-05-15
申请号：US11168358
申请日：2005-06-29
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/13
CPC分类号： G02F1/134363 , G02F1/1368 , G02F2001/136231
摘要： A liquid crystal display device having first and second substrates; a gate line on the first substrate; a data line crossing the gate line to define a pixel area, the gate line and the data line having a gate insulating film there between; a thin film transistor including a gate electrode, a source electrode, a drain electrode and a semiconductor layer for defining a channel between the source electrode and the drain electrode; a common line in parallel to the gate line on the first substrate; a common electrode extended from the common line in the pixel area; and a pixel electrode spaced apart from the common line and the common electrode in the pixel area to be defined in a pixel hole passing through the gate insulating film, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode, and wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode to be connected to the pixel electrode.
摘要翻译：一种具有第一和第二基板的液晶显示装置; 第一基板上的栅极线; 与栅极线交叉以限定像素区域的数据线，栅极线和数据线之间具有栅极绝缘膜; 包括栅电极，源电极，漏电极和用于限定源电极和漏电极之间的沟道的半导体层的薄膜晶体管; 与第一衬底上的栅极线并联的公共线; 从像素区域中的公共线延伸的公共电极; 以及与通过栅极绝缘膜的像素孔中限定的像素区域中的公共线和公共电极间隔开的像素电极，其中半导体层与包括数据线的源极和漏极金属图案重叠，源电极和漏电极，并且其中漏电极从半导体层突出到像素电极的上部，以连接到像素电极。

10. 发明授权

US07760276B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07760276B2
公开(公告)日：2010-07-20
申请号：US11169571
申请日：2005-06-30
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/1368 , G02F2001/136231 , G02F2001/136236
摘要： Disclosed is a thin film transistor substrate for a fringe filed switching type liquid crystal display device, and a fabrication method thereof, that reduces the number of required mask processes, and thus improves fabrication efficiency. The fabrication method involves three mask processes, wherein the masks are partial transmitting masks, and the resulting photo-resist patterns have varying thicknesses. By having photo-resist layers of varying thicknesses, structures can be formed in multiple etching steps using the same photo-resist pattern by incrementally removing the photo-resist according to its thickness. The thin film transistor substrate has a common line, a common electrode, a gate line and a gate electrode formed directly on the substrate. The common electrode overlaps the pixel electrode in the pixel area.
摘要翻译：公开了一种用于边缘场开关型液晶显示装置的薄膜晶体管基板及其制造方法，其减少了所需的掩模处理次数，从而提高了制造效率。制造方法涉及三个掩模工艺，其中掩模是部分透射掩模，并且所得光刻胶图案具有变化的厚度。通过具有不同厚度的光致抗蚀剂层，可以通过使用相同光刻胶图案的多个蚀刻步骤，通过根据其厚度逐渐去除光致抗蚀剂来形成结构。薄膜晶体管基板具有直接形成在基板上的公共线，公共电极，栅极线和栅电极。公共电极与像素区域中的像素电极重叠。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式