专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007024041A1 METHOD OF FABRICATING A P-I-N LIGHT EMITTING DIODE USING CU-DOPED P-TYPE ZNO 审中-公开
标题翻译：使用Cu-DOPED P型ZNO制备P-I-N发光二极管的方法
公开(公告)号：WO2007024041A1
公开(公告)日：2007-03-01
申请号：PCT/KR2005/004212
申请日：2005-12-09
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , CHOI, Won-kook , JUNG, Yeon-sik
发明人： CHOI, Won-kook , JUNG, Yeon-sik
IPC分类号： H01L33/00
CPC分类号： H01L33/0087 , H01L33/0012 , H01L33/0095 , H01L33/285
摘要： Disclosed herein is a method of fabricating a p-i-n type light emitting diode using p-type ZnO, and particularly, a technique for fabricating a p-type ZnO thin film doped with copper, a light emitting diode manufactured using the same, and its application to electrical and magnetic devices. The method of fabricating a p-i-n type light emitting diode using p-type ZnO of the current invention includes depositing a low-temperature ZnO buffer layer on a sapphire single-crystal substrate, depositing an n-type gallium doped ZnO layer on the deposited low-temperature ZnO buffer layer, depositing an intrinsic ZnO thin film on the deposited n-type gallium doped ZnO layer, forming a p-type ZnO thin film layer on the deposited intrinsic ZnO thin film, forming a MESA structure on the p-type ZnO thin film layer through wet etching to obtain a diode structure, and subjecting the diode structure to post-heat treatment.
摘要翻译：本文公开了使用p型ZnO制造pin型发光二极管的方法，特别是制造掺杂有铜的p型ZnO薄膜的技术，使用其制造的发光二极管及其应用电磁设备。使用本发明的p型ZnO制造pin型发光二极管的方法包括在蓝宝石单晶衬底上沉积低温ZnO缓冲层，在沉积的低温ZnO上沉积n型掺杂镓的ZnO层，温度ZnO缓冲层，在沉积的n型掺杂镓的ZnO层上沉积本征ZnO薄膜，在沉积的本征ZnO薄膜上形成p型ZnO薄膜层，在p型ZnO薄膜上形成MESA结构膜层通过湿蚀刻获得二极管结构，并对二极管结构进行后热处理。

2. 发明申请

WO2009058180A3 SELF-ASSEMBLY TECHNIQUE APPLICABLE TO LARGE AREAS AND NANOFABRICATION 审中-公开
公开(公告)号：WO2009058180A3
公开(公告)日：2009-05-07
申请号：PCT/US2008/011211
申请日：2008-09-26
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , BITA, Ion , THOMAS, Edwin, L. , YANG, Joel, Kwang Wei , JUNG, Yeon Sik , ROSS, Caroline, A. , BERGGREN, Karl, K.
发明人： BITA, Ion , THOMAS, Edwin, L. , YANG, Joel, Kwang Wei , JUNG, Yeon Sik , ROSS, Caroline, A. , BERGGREN, Karl, K.
IPC分类号： B82B3/00 , B82B1/00
摘要： The present invention provides articles and methods for affecting the self- assembly of materials. In some cases, the invention provides an approach for facilitating the self-assembly of various materials, including polymeric materials (e.g., block polymers), nanoparticles, other materials capable of self-assembly, and the like, over relatively large surface areas. Some embodiments of the invention provide articles (e.g., substrates) which, when contacted with a material capable of self-assembly, may produce greater control of self-assembly through the bulk of the material.

3. 发明申请

WO2009058180A2 SELF-ASSEMBLY TECHNIQUE APPLICABLE TO LARGE AREAS AND NANOFABRICATION 审中-公开
标题翻译：适用于大面积和纳米加工的自组装技术
公开(公告)号：WO2009058180A2
公开(公告)日：2009-05-07
申请号：PCT/US2008011211
申请日：2008-09-26
申请人： MASSACHUSETTS INST TECHNOLOGY , BITA ION , THOMAS EDWIN L , YANG JOEL KWANG WEI , JUNG YEON SIK , ROSS CAROLINE A , BERGGREN KARL K
发明人： BITA ION , THOMAS EDWIN L , YANG JOEL KWANG WEI , JUNG YEON SIK , ROSS CAROLINE A , BERGGREN KARL K
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： C08F297/02 , G03F7/0002 , Y10T428/24802 , Y10T428/24917
摘要： The present invention provides articles and methods for affecting the self- assembly of materials. In some cases, the invention provides an approach for facilitating the self-assembly of various materials, including polymeric materials (e.g., block polymers), nanoparticles, other materials capable of self-assembly, and the like, over relatively large surface areas. Some embodiments of the invention provide articles (e.g., substrates) which, when contacted with a material capable of self-assembly, may produce greater control of self-assembly through the bulk of the material.
摘要翻译：本发明提供了影响材料自组装的制品和方法。在一些情况下，本发明提供了一种用于促进各种材料（包括聚合物材料（例如嵌段聚合物），纳米粒子，能够自组装的其他材料等）在相对大的表面积上自组装的方法。本发明的一些实施方案提供了当与能够自组装的材料接触时可以通过大部分材料产生更大的自组装控制的制品（例如基材）。

4. 发明申请

WO2006115318A1 C AND N-DOPED TITANIUMOXIDE-BASED PHOTOCATALYTIC AND SELF-CLEANING THIN FILMS AND THE PROCESS FOR PRODUCTION THEREOF 审中-公开
标题翻译： C和N-DOPED基于钛氧化物的光致变色和自清洁薄膜及其生产工艺
公开(公告)号：WO2006115318A1
公开(公告)日：2006-11-02
申请号：PCT/KR2005/004281
申请日：2005-12-14
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , CHOI, Won-Kook , JUNG, Yeon-Sik , KANG, Dong-Heon , LEE, Kyung-Ju
发明人： CHOI, Won-Kook , JUNG, Yeon-Sik , KANG, Dong-Heon , LEE, Kyung-Ju
IPC分类号： B01J37/08
CPC分类号： B01J35/004 , B01J21/063 , B01J27/22 , B01J27/24 , B01J37/34 , B01J37/347
摘要： The present invention provides for titanium oxide-based photocatalysts having a general formula of TiO 2-x-Ō C X N Ō and self-cleaning materials that are prepared by substituting O of pure TiO2 with C and N. A preparation method comprising a process for forming thin films of TiO 2-x-Ō C X N Ō by using gases such as Ar, N 2 , CO 2 , CO and O are used for reactive sputtering, and a process of heat treating at around 500°C, thereby crystallizing, is provided. The titanium oxide-based photocatalysts having a general formula of TiO 2-x-Ō C X N Ō and self-cleaning materials according to the present invention have a smaller optical bandgap compared to pure titanium oxides, and therefore, the photocatalysts can be activated under the visible light range. In addition, they comprise only pure anatase crystallization phase, and since the crystallized particles are small in size, the efficiency and self-cleaning effect of the photocatalysts are very high.
摘要翻译：本发明提供了具有通式TiO 2氧化钛的光催化剂和自清洁材料，其特征在于，通过用C和N代替纯TiO 2来制备。一种制备方法，包括用于形成TiO 2-x O x N O N的薄膜的方法，通过使用诸如Ar，N 2，CO 2，CO和O的气体用于反应性溅射，并且在约500℃下进行热处理，从而结晶。具有通式TiO 2氧化钛的光催化剂和根据本发明的自清洁材料与纯钛氧化物相比具有更小的光学带隙，因此，光催化剂可以在可见光范围内被活化。此外，它们仅包含纯锐钛矿结晶相，并且由于结晶粒子的尺寸小，因此光催化剂的效率和自清洁效果非常高。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式