会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明专利
    • Gas production apparatus
    • 气体生产设备
    • JP2014189883A
    • 2014-10-06
    • JP2013068993
    • 2013-03-28
    • Fujifilm Corp富士フイルム株式会社Japan Technological Research Association Of Artificial Photosynthetic Chemical Process人工光合成化学プロセス技術研究組合
    • SATO HISATOSHI
    • C25B9/00C25B11/06
    • C25B9/08C25B1/003C25B1/10C25B11/04H01L31/0687H01L31/0725Y02E10/544Y02E60/366Y02P20/134Y02P70/521
    • PROBLEM TO BE SOLVED: To provide a gas production apparatus capable of maintaining a high gas generation efficiency regardless of the passage of time and of stably manufacturing hydrogen and oxygen gases as perfectly separated high-purity gases.SOLUTION: The problem-solving gas production apparatus includes: an element laminate obtained by serially laminating multiple elements on which thin semiconductor films possessing pn junctions are formed and possessing a light reception unit on one side thereof and an electroconductive substrate on the other side thereof; a hydrogen gas generation unit formed on the surface of a first element positioned on the light reception unit side; a first electrolytic chamber including the hydrogen gas generation unit; an oxygen gas generation unit formed on the rear surface of the electroconductive substrate; a second electrolytic chamber including the oxygen gas generation unit; and an ion-permeable, gas-impermeable diaphragm configured in-between the first electrolytic chamber and the second electrolytic chamber.
    • 要解决的问题:提供一种能够保持高气体产生效率而不管时间流逝,以及稳定地制造氢气和氧气作为完全分离的高纯度气体的气体生产设备。解决方案:解决问题的气体生产设备 包括:通过串联层叠形成有具有pn结的薄半导体膜的多个元件并且在其一侧具有光接收单元并且在其另一侧上具有导电基板而获得的元件层压体; 形成在位于光接收单元侧的第一元件的表面上的氢气产生单元; 包括所述氢气产生单元的第一电解室; 形成在导电性基体的背面的氧气生成部, 包括氧气产生单元的第二电解室; 以及构造在所述第一电解室和所述第二电解室之间的离子可渗透的不透气膜。