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1. 发明申请

WO2011124914A1 SEMICONDUCTOR LASER DIODES 审中-公开
标题翻译：半导体激光二极管
公开(公告)号：WO2011124914A1
公开(公告)日：2011-10-13
申请号：PCT/GB2011/050680
申请日：2011-04-06
申请人： OCLARO TECHNOLOGY LIMITED , PFEIFFER, Hans-Ulrich , CARTER, Andrew Cannon , TROGER, Jörg , LICHTENSTEIN, Norbert , SCHWARZ, Michael , JAKUBOWICZ, Abram , SVERDLOV, Boris
发明人： PFEIFFER, Hans-Ulrich , CARTER, Andrew Cannon , TROGER, Jörg , LICHTENSTEIN, Norbert , SCHWARZ, Michael , JAKUBOWICZ, Abram , SVERDLOV, Boris
IPC分类号： H01S5/042 , H01S5/16 , H01S5/22
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n- region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p- metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译：半导体激光二极管包括在半导体本体内具有n区域和p区域横向隔开的半导体本体。激光二极管在n区和p区之间设置有一有源区，该区具有一前端和一后端段，n-金属化层位于邻近该n-区并具有用于将电流注入有源区和与n-金属化层相对并且邻近p区的p-金属化层，并且具有用于将电流注入到有源区中的第二注入器。选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。至少一个金属化层的宽度大于有源区的宽度。这种布置导致在有源区域的前端附近的电流分布基本均匀。有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

2. 发明申请

WO2007000615A3 HIGH POWER SEMICONDUCTOR LASER DIODE 审中-公开
标题翻译：高功率半导体激光二极管
公开(公告)号：WO2007000615A3
公开(公告)日：2007-06-28
申请号：PCT/GB2006050173
申请日：2006-06-28
申请人： BOOKHAM TECHNOLOGY PLC , HARDER CHRISTOPH , JAKUBOWICZ ABRAM , MATUSCHEK NICOLAI , TROGER JOERG , SCHWARZ MICHAEL
发明人： HARDER CHRISTOPH , JAKUBOWICZ ABRAM , MATUSCHEK NICOLAI , TROGER JOERG , SCHWARZ MICHAEL
IPC分类号： H01S5/20 , H01S5/02 , H01S5/042 , H01S5/22
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto- electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译：半导体激光二极管，特别是高光输出功率的大面积单发射极（BASE）激光二极管通常用于光电子器件中。这种激光二极管的光输出功率和稳定性是非常重要的，正常使用过程中的任何退化都是一个明显的缺点。本发明涉及这种激光二极管的改进设计，尤其通过以限定的方式控制激光二极管中的电流流动，特别是在非常高的光输出功率下显着最小化或避免（前端）部分退化的改进。这是通过沿着激光二极管的纵向延伸产生单个电流注入点来以新颖方式控制载流子注入（即注入电流）到激光二极管中来实现的，例如，沿着波导。此外，每个单个或一组电流注入点的电源电流/电压可以分开调节，进一步增强了载流子注入的可控性。

3. 发明申请

WO2007000615A2 HIGH POWER SEMICONDUCTOR LASER DIODE 审中-公开
标题翻译：大功率半导体激光二极管
公开(公告)号：WO2007000615A2
公开(公告)日：2007-01-04
申请号：PCT/GB2006/050173
申请日：2006-06-28
申请人： BOOKHAM TECHNOLOGY PLC , HARDER, Christoph , JAKUBOWICZ, Abram , MATUSCHEK, Nicolai , TROGER, Joerg , SCHWARZ, Michael
发明人： HARDER, Christoph , JAKUBOWICZ, Abram , MATUSCHEK, Nicolai , TROGER, Joerg , SCHWARZ, Michael
IPC分类号： H01S5/20 , H01S5/22 , H01S5/042 , H01S5/02
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto- electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
摘要翻译：半导体激光二极管，特别是具有高光输出功率的广域单发射器（BASE）激光二极管通常用于光电子。这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。本发明涉及这种激光二极管的改进设计，特别地通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下，特别地显着地最小化或避免（前）端部部分退化的改进。这通过以新颖的方式通过沿着激光二极管的纵向延伸，例如通过产生单电流注入点来控制载流子注入即注入电流来实现。沿着波导。此外，每个单个或一组电流注入点的供电电流/电压可以单独调节，进一步增强了载流子注入的可控性。

4. 发明申请

WO2007000614A1 HIGH POWER SEMICONDUCTOR OPTO-ELECTRONIC DEVICE 审中-公开
标题翻译：高功率半导体光电设备
公开(公告)号：WO2007000614A1
公开(公告)日：2007-01-04
申请号：PCT/GB2006/050172
申请日：2006-06-28
申请人： BOOKHAM TECHNOLOGY PLC , HARDER, Christoph , JAKUBOWICZ, Abram , MATUSCHEK, Nicolai , TROGER, Joerg , SCHWARZ, Michael
发明人： HARDER, Christoph , JAKUBOWICZ, Abram , MATUSCHEK, Nicolai , TROGER, Joerg , SCHWARZ, Michael
IPC分类号： H01S5/042 , H01S5/16
CPC分类号： H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/168 , H01S5/2036 , H01S5/2216 , H01S5/2231
摘要： Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current -blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
摘要翻译：半导体激光二极管，特别是具有高光输出功率的广域单发射极（BASE）激光二极管，通常用于光电子。这种激光二极管的光输出功率和稳定性是至关重要的，并且在正常使用期间的任何劣化是显着的缺点。本发明涉及这种激光二极管的改进设计，特别是通过以限定的方式控制激光二极管中的电流来显着最小化或避免这种激光二极管在非常高的光输出功率下的劣化的改进。与现有技术的设计相比，这种激光二极管（前端）部分退化的最小化或避免显着增加了长期稳定性。这是通过控制在其小面附近的激光二极管的载流子注入，以避免突然的注入电流峰值来实现的。为此，当前阻挡隔离层（14）在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构，导致朝向所述隔离层的边缘的有效隔离减小，从而提供在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。

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