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1. 发明授权

US08800037B2 System for an engine for forecasting cyber threats and method for forecasting cyber threats using the system 有权
标题翻译：用于预测网络威胁的引擎系统以及使用该系统预测网络威胁的方法
公开(公告)号：US08800037B2
公开(公告)日：2014-08-05
申请号：US13320263
申请日：2010-06-22
申请人： Seung Hyun Paek , In Sung Park , Eun Young Lee , Joo Beom Yun , Ki Wook Sohn , Seok Jin Choi
发明人： Seung Hyun Paek , In Sung Park , Eun Young Lee , Joo Beom Yun , Ki Wook Sohn , Seok Jin Choi
IPC分类号： G06F11/00 , H04L29/06 , G06F21/55 , G06F21/57
CPC分类号： G06F21/577 , G06F21/552 , G06F2221/0775 , G06F2221/2129 , G06F2221/2145 , G06F2221/2151 , H04L63/1416
摘要： A system for an engine for forecasting cyber threats and a method enabling the forecast of a low-level cyber threat and the forecast of a high-level cyber threat using the low-level cyber threat in a hierarchical structure of cyber threats are provided. The system includes a forecast information database which stores forecast information including cyber threat forecast items, a forecast schedule related to the items, forecast simulation information, forecast item hierarchical structure information, time series data on cyber threats, and sample data on cyber threats; a forecast engine core subsystem which forecasts the levels of threats for the cyber threat forecast items having a hierarchical structure using the forecast information stored in the forecast information database; and a forecast engine control interface which receives control commands for the forecast engine core subsystem from a user or external system, and delivers the received control commands to the forecast engine core subsystem.
摘要翻译：提供了一种用于预测网络威胁的引擎系统，并提供了一种能够预测低级网络威胁的方法，并使用网络威胁分层结构中的低级网络威胁来预测高级网络威胁。该系统包括一个预测信息数据库，存储预测信息，包括网络威胁预测项目，与项目有关的预测进度，预测模拟信息，预测项目分层结构信息，网络威胁时间序列数据和网络威胁示例数据; 预测引擎核心子系统，使用存储在预测信息数据库中的预测信息来预测具有分级结构的网络威胁预测项目的威胁级别; 以及预测引擎控制接口，其从用户或外部系统接收用于预测引擎核心子系统的控制命令，并将接收的控制命令传递到预测引擎核心子系统。

2. 发明授权

US08361545B2 Manufacturing method of photonic crystal 失效
公开(公告)号：US08361545B2
公开(公告)日：2013-01-29
申请号：US12227594
申请日：2006-06-01
申请人： In Sung Park , Tae Ho Lee , Jin Ho Ahn , Rana Biswas , Kristen P. Constant , Kai-Ming Ho , Jae-Hwang Lee
发明人： In Sung Park , Tae Ho Lee , Jin Ho Ahn , Rana Biswas , Kristen P. Constant , Kai-Ming Ho , Jae-Hwang Lee
IPC分类号： B05D5/06
CPC分类号： B05D5/06 , B82Y20/00 , G02B6/1225 , G02B6/132 , Y10T428/24942
摘要： A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it possible to form a three-dimensional photonic crystal having a superior photonic bandgap. Herein, the three-dimensional structure may be prepared by a layer-by-layer method.

3. 发明授权

US08191149B2 System and method for predicting cyber threat 有权
标题翻译：用于预测网络威胁的系统和方法
公开(公告)号：US08191149B2
公开(公告)日：2012-05-29
申请号：US11938356
申请日：2007-11-12
申请人： Joo Beom Yun , Seung Hyun Paek , In Sung Park , Eun Young Lee , Hyung Geun Oh , Do Hoon Lee
发明人： Joo Beom Yun , Seung Hyun Paek , In Sung Park , Eun Young Lee , Hyung Geun Oh , Do Hoon Lee
IPC分类号： G06F12/14
CPC分类号： H04L63/145 , G06F21/552
摘要： Provided are a system and method for predicting a cyber threat. The system and method collect various variables and synthetically predict the frequency, dangerousness, possibility, and time of the occurrence of a cyber threat including hacking, a worm/virus, a Denial of Service (DoS) attack, illegal system access, a malicious code, a social engineering attack, system/data falsification, cyber terror/war, weakness exploitation, etc., using a time-series analysis method and a Delphi method, and inform a user in advance of the prediction result, thereby enabling the user to prepare against the cyber threat.
摘要翻译：提供了一种用于预测网络威胁的系统和方法。系统和方法收集各种变量，综合预测网络威胁发生的频率，危险性，可能性和时间，包括黑客，蠕虫/病毒，拒绝服务（DoS）攻击，非法系统访问，恶意代码使用时间序列分析方法和德尔菲法进行社会工程攻击，系统/数据伪造，网络恐怖/战争，弱势利用等，并提前通知用户预测结果，从而使用户能够准备反对网络威胁。

4. 发明授权

US08039054B2 Layer deposition methods 失效
标题翻译：层沉积方法
公开(公告)号：US08039054B2
公开(公告)日：2011-10-18
申请号：US10854942
申请日：2004-05-27
申请人： In-Sung Park , Young-Wook Park , Myeong-Jin Kim , Eun-Taek Yim , Han-Mei Choi , Kyoung-Seok Kim , Beung-Keun Lee
发明人： In-Sung Park , Young-Wook Park , Myeong-Jin Kim , Eun-Taek Yim , Han-Mei Choi , Kyoung-Seok Kim , Beung-Keun Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/45531 , C23C16/403 , C23C16/45527 , C23C16/45561
摘要： A layer deposition method includes: feeding a reactant with a first flow of an inert gas as a carrier gas into a reaction chamber to chemisorb the reactant on a substrate; feeding the first flow of the inert gas to purge the reaction chamber and a first reactant feed line; and feeding the second flow of the inert gas into the reaction chamber through a feed line different from the first reactant feed line.
摘要翻译：层沉积方法包括：将具有作为载气的惰性气体的第一流的反应物进料到反应室中以化学吸附基材上的反应物; 供给惰性气体的第一流以吹扫反应室和第一反应物进料管线; 以及通过不同于第一反应物进料管线的进料管线将惰性气体的第二流量进料到反应室中。

5. 发明申请

US20090138590A1 APPARATUS AND METHOD FOR DETECTING ANOMALOUS TRAFFIC 有权
标题翻译：用于检测异常交通的装置和方法
公开(公告)号：US20090138590A1
公开(公告)日：2009-05-28
申请号：US12103266
申请日：2008-04-15
申请人： Eun Young LEE , Seung Hyun PAEK , In Sung PARK , Joo Beom YUN , Ki Wook SOHN
发明人： Eun Young LEE , Seung Hyun PAEK , In Sung PARK , Joo Beom YUN , Ki Wook SOHN
IPC分类号： G06F15/173
CPC分类号： H04L63/1425 , H04L43/045
摘要： An apparatus and method for detecting anomalous traffic are provided. More particularly, an apparatus and method for detecting anomalous traffic based on entropy of network traffic are provided. The apparatus of detecting anomalous traffic includes: an entropy extraction module for extracting entropy from network traffic; a visualization module for generating an entropy graph based on the entropy; a graph model experience module for updating a graph model for each network attack based on the entropy graph; and an anomalous traffic detection module for detecting anomalous traffic based on the entropy graph and the graph model for each network attack and outputting the detection results to a user. In the apparatus and method, anomalous traffic is detected based on network entropy rather than simple statistics based on the amount of traffic, so that a false alarm rate of the apparatus for detecting anomalous traffic can be reduced.
摘要翻译：提供了一种用于检测异常流量的装置和方法。更具体地，提供了一种用于基于网络流量熵来检测异常业务的装置和方法。检测异常流量的装置包括：熵抽取模块，用于从网络流量提取熵; 用于基于所述熵产生熵图的可视化模块; 用于基于熵图更新每个网络攻击的图形模型的图形模型体验模块; 以及用于根据每个网络攻击的熵图和图形模型检测异常流量的异常流量检测模块，并将检测结果输出给用户。在装置和方法中，基于网络熵而不是基于业务量的简单统计来检测异常业务，从而可以减少用于检测异常业务的装置的误报率。

6. 发明申请

US20050272272A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050272272A1
公开(公告)日：2005-12-08
申请号：US11198541
申请日：2005-08-05
申请人： Jae-Hyun Yeo , Sung-Tae Kim , Young-Sun Kim , In-Sung Park , Seok-Jun Won , Yun-Jung Lee , Ki-Vin Im , Ki-Yeon Park
发明人： Jae-Hyun Yeo , Sung-Tae Kim , Young-Sun Kim , In-Sung Park , Seok-Jun Won , Yun-Jung Lee , Ki-Vin Im , Ki-Yeon Park
IPC分类号： H01L27/04 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/469 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L21/02271 , H01L21/02178 , H01L21/02181 , H01L21/022 , H01L21/0228 , H01L21/02318 , H01L21/0234 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/40
摘要： A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.
摘要翻译：一种半导体器件及其形成方法。电介质层形成在半导体衬底上或电容器的下电极上。在电介质层上进行真空退火。因此，可以有效地除去残留在电介质层中的杂质，并且可以使电介质层致密化。结果，提高了半导体器件的电特性。例如，介电层的漏电流特性得到改善，电容增大。

7. 发明申请

US20050051828A1 Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer deposition 审中-公开
标题翻译：使用原子层沉积形成金属薄膜，氧化镧膜和用于半导体器件的高介电膜的方法
公开(公告)号：US20050051828A1
公开(公告)日：2005-03-10
申请号：US10828596
申请日：2004-04-21
申请人： Ki-yeon Park , Sung-tae Kim , Young-sun Kim , In-sung Park , Jae-hyun Yeo , Yun-jung Lee , Ki-vin Im
发明人： Ki-yeon Park , Sung-tae Kim , Young-sun Kim , In-sung Park , Jae-hyun Yeo , Yun-jung Lee , Ki-vin Im
IPC分类号： H01L21/20 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316 , H01L21/8242 , H01B1/00 , H01L27/108 , H01L29/94 , H01L31/119 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45529 , C23C16/45553 , H01L21/02178 , H01L21/02192 , H01L21/022 , H01L21/02337 , H01L21/3141 , H01L21/31604 , H01L27/1085
摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.
摘要翻译：本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

8. 发明申请

US20050000426A1 Methods and apparatus for depositing a thin film on a substrate 审中-公开
标题翻译：在基板上沉积薄膜的方法和装置
公开(公告)号：US20050000426A1
公开(公告)日：2005-01-06
申请号：US10747803
申请日：2003-12-29
申请人： Ki-Vin Im , In-Sung Park , Sung-Tae Kim , Young-Sun Kim , Jae-Hyun Yeo , Yun-Jung Lee , Ki-Yeon Park
发明人： Ki-Vin Im , In-Sung Park , Sung-Tae Kim , Young-Sun Kim , Jae-Hyun Yeo , Yun-Jung Lee , Ki-Yeon Park
IPC分类号： H01L21/02 , C23C16/00 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455
CPC分类号： C23C16/45544 , C23C16/40 , C23C16/4481
摘要： An apparatus for depositing a thin film includes a reaction chamber, a reaction gas provider to supply a reaction gas and/or inert gas to the reaction chamber, an oxidant provider to supply a first oxidant and a second oxidant to the reaction chamber, and an air drain to exhaust gas from the apparatus. The oxidant provider is operable to supply the second oxidant to the reaction chamber using the first oxidant as a transfer gas.
摘要翻译：用于沉积薄膜的装置包括反应室，向反应室供应反应气体和/或惰性气体的反应气体提供者，向反应室供应第一氧化剂和第二氧化剂的氧化剂供体，以及从设备排出废气。氧化剂供应商可操作以使用第一氧化剂作为转移气体将第二氧化剂供应到反应室。

9. 发明授权

US5780115A Methods for fabricating electrode structures including oxygen and nitrogen plasma treatments 失效
标题翻译：用于制造包括氧和氮等离子体处理的电极结构的方法
公开(公告)号：US5780115A
公开(公告)日：1998-07-14
申请号：US806145
申请日：1997-02-25
申请人： In-sung Park , Byoung-taek Lee
发明人： In-sung Park , Byoung-taek Lee
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108 , H05H1/00 , B05D3/06
CPC分类号： H01L28/60
摘要： A method for fabricating an integrated circuit capacitor includes the steps of forming a first electrode on a microelectronic substrate, and plasma treating the first electrode with a with a plasma of a gas including nitrogen and oxygen. A dielectric film is formed on the plasma treated first electrode opposite the microelectronic substrate. A second electrode is formed on the dielectric film opposite the plasma treated first electrode.
摘要翻译：一种用于制造集成电路电容器的方法包括以下步骤：在微电子衬底上形成第一电极，以及用包括氮和氧的气体等离子体等离子体处理第一电极。在与微电子衬底相对的等离子体处理的第一电极上形成电介质膜。在与等离子体处理的第一电极相对的电介质膜上形成第二电极。

10. 发明授权

US07425514B2 Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same 有权
标题翻译：使用原子层沉积法形成材料的方法和使用其形成半导体器件的电容器的方法
公开(公告)号：US07425514B2
公开(公告)日：2008-09-16
申请号：US11430856
申请日：2006-05-10
申请人： Jae-Hyun Yeo , Young-Sun Kim , Sung-Tae Kim , In-Sung Park , Gi-Vin Im
发明人： Jae-Hyun Yeo , Young-Sun Kim , Sung-Tae Kim , In-Sung Park , Gi-Vin Im
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/452 , C23C16/45553 , H01L21/02181 , H01L21/02274 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31683 , H01L21/31691 , H01L28/40
摘要： Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.
摘要翻译：公开了使用原子层沉积（ALD）形成介电材料的方法以及在半导体器件上从这种材料形成电介质层的方法。 ALD方法利用含有至少一个醇化物基团的第一反应物，其被化学吸附在基材的表面上，然后与不含羟基的活化氧化剂反应，形成表现出优异的台阶覆盖率和改善的漏电流特性的电介质材料。

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