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1. 发明授权

US5953027A Method and apparatus for redirecting propagating acoustic waves from a substrate to a slant face to cause ink-jetting of ink material 失效
标题翻译：用于将传播声波从基板重定向到倾斜面以使墨水材料喷墨的方法和装置
公开(公告)号：US5953027A
公开(公告)日：1999-09-14
申请号：US731780
申请日：1996-10-18
申请人： Yasufumi Suwabe , Yoshiyuki Shiratsuki , Ichiro Asai , Koichi Haga , Keizo Abe
发明人： Yasufumi Suwabe , Yoshiyuki Shiratsuki , Ichiro Asai , Koichi Haga , Keizo Abe
IPC分类号： B41J2/01 , B41J2/015 , B41J2/14 , B41J2/135
CPC分类号： B41J2/14008
摘要： An ink-jet recording apparatus jetts an ink droplet from a free surface of an ink material by propagating a surface acoustic wave. The apparatus includes a substrate, a slant face formed on the substrate, The slant face contacts the ink material with a grade in use. A vibration generator for generating plural surface acoustic waves, is formed on the substrate away from the ink material in use, and the plural surface acoustic waves are propagated along with the substrate and changed into plural longitudinal waves having propagating directions in the ink material. The propagating directions will be concentrated at a certain portion within the ink material.
摘要翻译：喷墨记录装置通过传播表面声波从墨水材料的自由表面喷射墨滴。该装置包括基板，形成在基板上的倾斜面。倾斜面在使用中与使用的等级接触墨水材料。用于产生多个表面声波的振动发生器在离开使用的墨水材料的基板上形成，并且多个声表面波与基板一起传播并变成在油墨材料中具有传播方向的多个纵波。传播方向将集中在油墨材料中的某一部分。

2. 发明授权

US5367180A Thin-film semiconductor device with field plate 失效
标题翻译：带场板的薄膜半导体器件
公开(公告)号：US5367180A
公开(公告)日：1994-11-22
申请号：US46397
申请日：1993-04-09
申请人： Ichiro Asai , Takao Tomono , Takeshi Nakamura
发明人： Ichiro Asai , Takao Tomono , Takeshi Nakamura
IPC分类号： B41J2/385 , B43L13/00 , H01L21/336 , H01L27/12 , H01L29/06 , H01L29/40 , H01L29/45 , H01L29/78 , H01L29/786
CPC分类号： H01L29/402 , H01L29/458 , H01L29/7813 , H01L29/78624 , H01L29/78645 , H01L29/78648
摘要： The invention is based on a thin-film semiconductor FET device. A field plate electrode for producing an electric field is formed on a channel-protecting film above the end of the gate electrode that is on the side of an offset region. Stable transistor characteristics can be maintained for a long time with the field plate electrode voltage set to a low value. The drain electrode is coated with a film of an anticorrosion metal. Where an integrated circuit with a high device density is fabricated from semiconductor devices of this construction, the drain electrodes are effectively prevented from being corroded.
摘要翻译：本发明基于薄膜半导体FET器件。用于产生电场的场板电极形成在位于偏移区域一侧的栅电极端部上的沟道保护膜上。当场板电极电压设置为低值时，可以长时间保持稳定的晶体管特性。漏电极涂覆有防腐金属膜。在由这种结构的半导体器件制造具有高器件密度的集成电路的情况下，有效地防止了漏极电极的腐蚀。

3. 发明授权

US5279980A Method of manufacturing a thin-film semiconductor device having an alpha-tantalum first wiring member 失效
标题翻译：制造具有α-钽第一配线构件的薄膜半导体器件的方法
公开(公告)号：US5279980A
公开(公告)日：1994-01-18
申请号：US895439
申请日：1992-06-05
申请人： Takehito Hikichi , Shigeru Yamamoto , Ichiro Asai
发明人： Takehito Hikichi , Shigeru Yamamoto , Ichiro Asai
IPC分类号： H01L21/3205 , H01L23/52 , H01L23/532 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： H01L23/53223 , H01L29/4908 , H01L2924/0002 , H01L2924/09701
摘要： In a reverse staggered MOS transistor, a gate electrode and a signal wiring connected to the gate electrode consist of a wiring base on the substrate side and an overlying wiring part superposed on the wiring base. The wiring base is composed of a conductive material, e.g., tantalum-molybdenum alloy, which has a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of .alpha.-tantalum. Being continuously deposited on the wiring base by sputtering, the overlying wiring part also assumes the .alpha.-tantalum form inheriting the lattice structure of the wiring base. In the case of a staggered MOS transistor, source and drain electrodes and respective signal wirings connected to the source and drain electrodes take the similar structure.
摘要翻译：在反向交错MOS晶体管中，栅极电极和连接到栅电极的信号布线由基板侧的布线基板和叠置在布线基板上的覆盖布线部分组成。布线基底由诸如钽 - 钼合金的导电材料组成，其具有体心立方晶格结构，其晶格常数与（α） - 钽的晶格常数相同或近似相同。通过溅射连续沉积在布线基底上，上覆的布线部分也采用继承布线基底的格子结构的（α） - 钽形式。在交错MOS晶体管的情况下，连接到源极和漏极的源极和漏极以及相应的信号布线具有相似的结构。

4. 发明授权

US5140403A Thin-film semiconductor device having an .alpha.-tantalum first wiring member 失效
标题翻译：具有α-钽第一配线构件的薄膜半导体器件
公开(公告)号：US5140403A
公开(公告)日：1992-08-18
申请号：US660836
申请日：1991-02-26
申请人： Takehito Hikichi , Shigeru Yamamoto , Ichiro Asai
发明人： Takehito Hikichi , Shigeru Yamamoto , Ichiro Asai
IPC分类号： H01L21/3205 , H01L23/52 , H01L23/532 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L23/53223 , H01L29/4908 , H01L2924/0002 , H01L2924/09701
摘要： In a reverse staggered MOS transistor, a gate electrode and a signal wiring connected to the gate electrode consist of a wiring base on the substrate side and an overlying wiring part superposed on the wiring base. The wiring base is composed of a conductive material, e.g., tantalum-molybdenum alloy, which has a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of .alpha.-tantalum. Being continuously deposited on the wiring base by sputtering, the overlying wiring part also assumes the .alpha.-tantalum form inheriting the lattice structure of the wiring base. In the case of a staggered MOS transistor, source and drain electrodes and respective signal wirings connected to the source and drain electrodes take the similar structure.
摘要翻译：在反向交错MOS晶体管中，栅极电极和连接到栅电极的信号布线由基板侧的布线基板和叠置在布线基板上的覆盖布线部分组成。布线基底由诸如钽 - 钼合金的导电材料组成，其具有体心立方晶格结构，其晶格常数与α-钽的晶格常数相同或近似相同。通过溅射不断地沉积在布线基底上，上覆的布线部分也呈现继承布线基底的格子结构的α-钽形式。在交错MOS晶体管的情况下，连接到源极和漏极的源极和漏极以及相应的信号布线具有相似的结构。

5. 发明授权

US4075253A Organolithium polymerization initiators and their preparations 失效
标题翻译：有机锂聚合引发剂及其制备方法
公开(公告)号：US4075253A
公开(公告)日：1978-02-21
申请号：US577980
申请日：1975-05-15
申请人： Shigeki Horiie , Shin-Ichiro Asai , Takashi Torikoshi , Kazuhiro Shirakawa , Minoru Handa
发明人： Shigeki Horiie , Shin-Ichiro Asai , Takashi Torikoshi , Kazuhiro Shirakawa , Minoru Handa
IPC分类号： C08F4/00 , C07F1/02 , C08F4/42 , C08F4/48 , C08F297/00 , C08F297/04
CPC分类号： C08F297/042 , C07F1/02
摘要： A stable and non-polar solvent soluble alpha-methylstyrene-conjugated diene oligomer dilithium as a polymerization initiator is obtained by preparing a dilithium initiator solution by reacting lithium metal with alpha-methylstyrene in a polar solvent at low temperature, thereafter adding gradually a small amount of a conjugated diene to the dilithium initiator solution to consume completely the alpha-methylstyrene, and then adding additional conjugated diene in a certain amount so as to prepare the stable and non-polar solvent soluble alpha-methylstyrene-conjugated diene oligomer dilithium.
摘要翻译：通过在极性溶剂中在低温下使锂金属与α-甲基苯乙烯反应制备二锂引发剂溶液，然后逐渐加入少量，得到稳定和非极性溶剂可溶性α-甲基苯乙烯 - 共轭二烯低聚物二锂作为聚合引发剂的共轭二烯与二锂引发剂溶液反应以完全消耗α-甲基苯乙烯，然后加入一定量的另外的共轭二烯，以制备稳定和非极性溶剂可溶性α-甲基苯乙烯 - 共轭二烯低聚物二锂。

6. 发明授权

US3939224A Block copolymers for a sheet or film 失效
标题翻译：用于片材或薄膜的嵌段共聚物
公开(公告)号：US3939224A
公开(公告)日：1976-02-17
申请号：US423617
申请日：1973-12-10
申请人： Shigeki Horiie , Shin-Ichiro Asai , Yoshihisa Moriya
发明人： Shigeki Horiie , Shin-Ichiro Asai , Yoshihisa Moriya
IPC分类号： C08F297/04 , C08F236/00 , C08F4/46
CPC分类号： C08F297/042
摘要： First polymerization of a mixture of styrene-type monomers and conjugated diene monomers containing 30 to 70% by weight of styrene-type monomers is carried out, and when 40 or more of the diene monomers have been converted to a copolymer, there are then added styrene-type monomers in such an amount that the content of styrene units accounts for a proportion of 70 to 85% by weight of the finally obtained block copolymers, followed by completion of the polymerization. Alternatively, when all the diene monomers added have been converted to the copolymer, the second polymerization of styrene type monomers is carried out in the presence of a small amount of conjugated dienes as a polymerization retardant. Block copolymers obtained thus are useful for sheet or film molding having good low-temperature impact strength.
摘要翻译：进行苯乙烯类单体和含有30〜70重量％苯乙烯类单体的共轭二烯单体的混合物的首次聚合，当40个以上的二烯单体转化为共聚物时，苯乙烯类单体的量使得苯乙烯单元的含量占最终获得的嵌段共聚物的70〜85重量％的比例，然后完成聚合。或者，当所有加入的二烯单体已经转化为共聚物时，苯乙烯类单体的第二聚合在少量作为聚合阻燃剂的共轭二烯的存在下进行。因此得到的嵌段共聚物可用于具有良好低温冲击强度的片或薄膜成型。

7. 发明授权

US4529755A Epoxy resin composition for encapsulating semiconductor 失效
标题翻译：用于封装半导体的环氧树脂组合物
公开(公告)号：US4529755A
公开(公告)日：1985-07-16
申请号：US544242
申请日：1983-10-21
申请人： Hiroshi Nishikawa , Ueki Saruta , Shin-ichiro Asai
发明人： Hiroshi Nishikawa , Ueki Saruta , Shin-ichiro Asai
IPC分类号： C08L63/00 , H01B3/40 , C08K3/34 , C08K3/00 , C08K9/06 , H05K5/00
CPC分类号： H01B3/40 , C08L63/00
摘要： An epoxy resin composition for encapsulating semiconductors and semiconductor elements is disclosed. This epoxy resin composition mainly comprises (a) a polyfunctional epoxy compound, (b) a styrene type block copolymer or styrene type block copolymer and liquid rubber, (c) a hardener for the epoxy compound and (d) an inorganic filler.
摘要翻译：公开了一种用于封装半导体和半导体元件的环氧树脂组合物。该环氧树脂组合物主要包含（a）多官能环氧化合物，（b）苯乙烯型嵌段共聚物或苯乙烯型嵌段共聚物和液体橡胶，（c）环氧化合物用固化剂和（d）无机填料。

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