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    • 1. 发明申请
    • SEALING RING ASSEMBLY AND MOUNTING METHOD
    • 密封环组件和安装方法
    • US20050244710A1
    • 2005-11-03
    • US10905717
    • 2005-01-18
    • Ian MayesJames GoughIan GilbertHarvey Podgorney
    • Ian MayesJames GoughIan GilbertHarvey Podgorney
    • H01L21/66H01M2/08F16J15/02
    • H01L22/00
    • A sealing ring assembly and an improved method for mounting a sealing ring into an electrochemical cell used for Electrochemical Capacitance Voltage (ECV) profiling measurements. The ring is located in a holder having at least one secondary bore providing fluid communication between a forward face of the holder and the central bore of the ring, directed parallel to but tangentially offset relative to the inner wall of the central bore so as to impart a degree of rotational flow to electrolyte entering the sealing ring through the or each secondary bore which effectively removes gas bubbles and refreshes the electrolyte. The holder facilitates ring removal with a much reduced risk of damage to the delicate sealing surface.
    • 密封环组件和用于将密封环安装到用于电化学电容电压(ECV)分析测量的电化学电池中的改进方法。 所述环位于具有至少一个次级孔的保持器中,所述至少一个次级孔在保持器的前表面和环的中心孔之间提供流体连通,其平行于中心孔的内壁平行但相切地偏移,以便赋予 通过该孔或每个次级孔进入密封环的电解质的旋转流程,其有效地去除气泡并刷新电解质。 保持架有助于清除环,从而减少对精密密封面的损坏风险。
    • 3. 发明授权
    • Micro defects in semi-conductors
    • 半导体微缺陷
    • US07446868B1
    • 2008-11-04
    • US11528723
    • 2006-09-26
    • Victor HiggsIan MayesFreddie Yun Heng ChinMichael Sweeney
    • Victor HiggsIan MayesFreddie Yun Heng ChinMichael Sweeney
    • G01J3/30G01J3/00H01L21/00
    • G01N21/6489
    • The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0.1 mm 0.5 microns and a peak or average power density of 104-109 w/cm2 with a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelengths may be selected to identify defects at a selective depth as well as confocal optics may be used.
    • 本发明涉及一种用于在室温下和在有效时间内使用光致发光来检测半导体或硅结构中的缺陷的方法和装置。 本发明采用高强度光束,其优选地具有0.1mm×0.5微米的光点尺寸和10-4V的峰值或平均功率密度 以产生高浓度的电荷载体,这些电荷特性通过与半导体的相互作用来检测半导体中的缺陷。 通过产生半导体的光致发光图像可以看到这些缺陷。 可以选择几个波长来识别选择深度处的缺陷以及可以使用共焦光学器件。