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    • 2. 发明申请
    • LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 液晶显示装置及其制造方法
    • US20140139770A1
    • 2014-05-22
    • US13855026
    • 2013-04-02
    • Hyun Jae AHN
    • Hyun Jae AHN
    • G02F1/1368
    • G02F1/136286G02F1/133345G02F1/134363G02F2001/134318
    • A liquid crystal device including an array substrate facing an opposite substrate; and a liquid crystal layer between the array and opposite substrate, the array substrate including a gate electrode and gate line on a base substrate; a gate insulating layer covering the gate electrode and including a trench crossing the gate line; a semiconductor layer on the gate insulating layer and including a channel area overlapping the gate electrode, a source area at one side of the channel area, and a drain area at another side of the channel area; a pixel electrode on the gate insulating layer and spaced apart from the semiconductor layer; a source electrode connected to the source area; a drain electrode connected to the drain area and the pixel electrode; a data line connected to the source electrode and being inside the trench; and a common electrode insulated from the pixel electrode.
    • 一种液晶装置,包括面对相对基板的阵列基板; 以及阵列和相对基板之间的液晶层,所述阵列基板在基底基板上包括栅电极和栅极线; 栅极绝缘层,覆盖所述栅电极并且包括与所述栅极线交叉的沟槽; 栅极绝缘层上的半导体层,并且包括与栅极电极重叠的沟道区域,沟道区域一侧的源极区域和沟道区域另一侧的漏极区域; 栅极绝缘层上的与半导体层间隔开的像素电极; 源极连接到源区; 连接到漏极区域和像素电极的漏电极; 连接到源电极并在沟槽内的数据线; 以及与像素电极绝缘的公共电极。
    • 3. 发明授权
    • Liquid crystal display device and method of manufacturing the same
    • 液晶显示装置及其制造方法
    • US09104081B2
    • 2015-08-11
    • US13855026
    • 2013-04-02
    • Hyun Jae Ahn
    • Hyun Jae Ahn
    • G02F1/1362G02F1/1333G02F1/1343
    • G02F1/136286G02F1/133345G02F1/134363G02F2001/134318
    • A liquid crystal device including an array substrate facing an opposite substrate; and a liquid crystal layer between the array and opposite substrate, the array substrate including a gate electrode and gate line on a base substrate; a gate insulating layer covering the gate electrode and including a trench crossing the gate line; a semiconductor layer on the gate insulating layer and including a channel area overlapping the gate electrode, a source area at one side of the channel area, and a drain area at another side of the channel area; a pixel electrode on the gate insulating layer and spaced apart from the semiconductor layer; a source electrode connected to the source area; a drain electrode connected to the drain area and the pixel electrode; a data line connected to the source electrode and being inside the trench; and a common electrode insulated from the pixel electrode.
    • 一种液晶装置,包括面对相对基板的阵列基板; 以及阵列和相对基板之间的液晶层,所述阵列基板在基底基板上包括栅电极和栅极线; 栅极绝缘层,覆盖所述栅电极并且包括与所述栅极线交叉的沟槽; 栅极绝缘层上的半导体层,并且包括与栅极电极重叠的沟道区域,沟道区域一侧的源极区域和沟道区域另一侧的漏极区域; 栅极绝缘层上的与半导体层间隔开的像素电极; 源极连接到源区; 连接到漏极区域和像素电极的漏电极; 连接到源电极并在沟槽内的数据线; 以及与像素电极绝缘的公共电极。