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1. 发明申请

US20120037970A1 MICROELECTRONIC MEMORY DEVICES HAVING FLAT STOPPER LAYERS AND METHODS OF FABRICATING THE SAME 有权
标题翻译：具有平面止动层的微电子存储器件及其制造方法
公开(公告)号：US20120037970A1
公开(公告)日：2012-02-16
申请号：US13117743
申请日：2011-05-27
申请人： Wonmo Park , Hyunchul Kim , Hyodong Ban , Hyunju Lee
发明人： Wonmo Park , Hyunchul Kim , Hyodong Ban , Hyunju Lee
IPC分类号： H01L29/772 , H01L21/02
CPC分类号： H01L27/108 , H01L21/205 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L28/91
摘要： Memory devices comprise a microelectronic substrate including a cell array region and a peripheral region adjacent the cell array region, the cell array region including therein an array of memory cells and the peripheral region including therein peripheral circuits for the array of memory cells, the microelectronic substrate including a lower layer that extends across the cell array region and across the peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, the insulating layer extending across the cell array region and the peripheral region and also including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Finally, an array of memory cell capacitor storage nodes is provided in the cell array region that extend beyond the flat stopper layer and that penetrate through the flat stopper layer and the insulating layer. Related methods are also provided.
摘要翻译：存储器件包括微电子衬底，其包括单元阵列区域和邻近单元阵列区域的外围区域，单元阵列区域包括存储单元阵列，外围区域包括存储单元阵列的外围电路，微电子衬底包括延伸穿过电池阵列区域并跨过外围区域并且包括从电池阵列区域到外围区域的平坦外表面的下层。信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸，并且在下层的平坦外表面上方的周边区域中延伸。绝缘层设置在下层，绝缘层延伸穿过电池阵列区域和周边区域，并且还包括从电池阵列区域到外围区域的平坦的外表面。在绝缘层的平坦外表面上设置有平坦的阻挡层，并延伸穿过电池阵列区域和周边区域。最后，存储单元电容器存储节点阵列设置在单元阵列区域中，该阵列区域延伸超过平坦阻挡层并且穿过平坦阻挡层和绝缘层。还提供了相关方法。

2. 发明授权

US08530324B2 Methods of fabricating microelectronic memory devices having flat stopper layers 有权
标题翻译：制造具有平坦塞子层的微电子存储器件的方法
公开(公告)号：US08530324B2
公开(公告)日：2013-09-10
申请号：US13117743
申请日：2011-05-27
申请人： Wonmo Park , Hyunchul Kim , Hyodong Ban , Hyunju Lee
发明人： Wonmo Park , Hyunchul Kim , Hyodong Ban , Hyunju Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/108 , H01L21/205 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L28/91
摘要： Memory devices comprise a microelectronic substrate including a cell array region and a peripheral region adjacent the cell array region, the cell array region including therein an array of memory cells and the peripheral region including therein peripheral circuits for the array of memory cells, the microelectronic substrate including a lower layer that extends across the cell array region and across the peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, the insulating layer extending across the cell array region and the peripheral region and also including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Finally, an array of memory cell capacitor storage nodes is provided in the cell array region that extend beyond the flat stopper layer and that penetrate through the flat stopper layer and the insulating layer. Related methods are also provided.
摘要翻译：存储器件包括微电子衬底，其包括单元阵列区域和邻近单元阵列区域的外围区域，单元阵列区域中包括存储单元阵列，外围区域包括存储单元阵列的外围电路，微电子衬底包括延伸穿过电池阵列区域并跨过外围区域并且包括从电池阵列区域到外围区域的平坦外表面的下层。信号传输导体层在下层的平坦外表面下方的电池阵列区域中延伸，并且在下层的平坦外表面上方的周边区域中延伸。绝缘层设置在下层，绝缘层延伸穿过电池阵列区域和周边区域，并且还包括从电池阵列区域到外围区域的平坦的外表面。在绝缘层的平坦外表面上设置有平坦的阻挡层，并延伸穿过电池阵列区域和周边区域。最后，存储单元电容器存储节点阵列设置在单元阵列区域中，该阵列区域延伸超过平坦阻挡层并且穿过平坦阻挡层和绝缘层。还提供了相关方法。

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