专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130161711A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20130161711A1
公开(公告)日：2013-06-27
申请号：US13614654
申请日：2012-09-13
申请人： Jung-Soo NAM , Joon-Suk Oh , Hye-Young Park
发明人： Jung-Soo NAM , Joon-Suk Oh , Hye-Young Park
IPC分类号： H01L29/94 , H01L29/78
CPC分类号： H01L29/78 , H01L27/0629 , H01L27/0811 , H01L29/66181 , H01L29/94
摘要： A semiconductor device includes a substrate including an active region having an isolated shape and a field region. A gate insulation layer is provided on an upper surface of the active region of the substrate. A gate electrode is provided on the gate insulation layer and spaced apart from the boundary of the active region to cover the middle portion of the active region. An impurity region is provided under a surface of the active region that is exposed by the gate electrode.
摘要翻译：半导体器件包括具有隔离形状的有源区和场区的衬底。栅极绝缘层设置在衬底的有源区的上表面上。栅电极设置在栅绝缘层上并与有源区的边界隔开以覆盖有源区的中间部分。在由栅电极露出的有源区的表面下方设置有杂质区。

2. 发明申请

US20110180774A1 Phase Change Memory Device 有权
标题翻译：相变存储器件
公开(公告)号：US20110180774A1
公开(公告)日：2011-07-28
申请号：US13082557
申请日：2011-04-08
申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
发明人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , C23C16/34 , C23C16/45536 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/1616 , H01L45/1683
摘要： Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
摘要翻译：提供了一种相变存储器件和用于形成相变存储器件的方法。该方法包括通过向基底提供反应性基团来形成相变材料层。反应性基团可以包括相变材料和氮的前体。

3. 发明授权

US07867880B2 Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors 有权
标题翻译：用于低温沉积的金属前体和形成金属薄层的方法，以及使用金属前体制造相变存储器件
公开(公告)号：US07867880B2
公开(公告)日：2011-01-11
申请号：US11772494
申请日：2007-07-02
申请人： Hye-young Park , Sung-lae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
发明人： Hye-young Park , Sung-lae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
IPC分类号： H01L21/205
CPC分类号： H01L45/1233 , C07F7/30 , C23C16/18 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1683 , Y10T428/31678
摘要： The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
摘要翻译：本发明提供用于低温沉积的金属前体。金属前体包括金属环化合物，其包含至少一种金属作为形成环的多个元素之一。还提供了形成金属薄层的方法和制造包括使用金属前体的相变存储器件。

4. 发明授权

US07807497B2 Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices 失效
标题翻译：相变材料层，其形成方法，具有该相变材料层的相变存储器件，以及形成相变存储器件的方法
公开(公告)号：US07807497B2
公开(公告)日：2010-10-05
申请号：US11826048
申请日：2007-07-12
申请人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
发明人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： C23C16/45523 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times. Example embodiments may also include memory devices using phase-change memory layers.
摘要翻译：示例性实施例可以提供相变材料层以及通过在反应室中产生包括氦和/或氩的等离子体来形成相变材料层的方法和使用该相变材料层的装置，通过引入在物体上形成第一材料层包括第一材料的第一源气体，通过将包括第二材料的第二源气体引入反应室，在物体上形成第一复合材料层，通过引入第三源气体在第一复合材料层上形成第三材料层包括第三材料，并且通过引入包括第四材料的第四源气体，在所述第一复合材料层上形成第二复合材料层。示例性实施例包括碳的相变材料层可以在较低温度下在氦/氩等离子体环境下更容易地和/或快速地形成，方法是提供用于各种进料时间的源气体。示例性实施例还可以包括使用相变存储器层的存储器件。

5. 发明申请

US20090285986A1 METHODS OF FORMING A MATERIAL LAYER AND METHODS OF FABRICATING A MEMORY DEVICE 有权
标题翻译：形成材料层的方法和制造存储器件的方法
公开(公告)号：US20090285986A1
公开(公告)日：2009-11-19
申请号：US12465975
申请日：2009-05-14
申请人： Hye-young Park , Sung-Iae Cho , Jin-il Lee , Do-hyung Kim , Dong-hyun Im
发明人： Hye-young Park , Sung-Iae Cho , Jin-il Lee , Do-hyung Kim , Dong-hyun Im
IPC分类号： C23C16/22
CPC分类号： C23C16/305 , C23C16/16 , C23C16/18 , C23C16/45531
摘要： Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.
摘要翻译：提供了通过化学吸附金属原子到其表面上形成有阴离子的基板来形成材料层的方法，以及通过使用材料层形成方法制造存储器件的方法。因此，具有小直径的通孔可以填充材料层而不形成空隙或接缝。因此，可以获得可靠的存储器件。

6. 发明申请

US20090097305A1 METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE 有权
标题翻译：使用GE（II）源形成相变材料层的方法和制备相变存储器件的方法
公开(公告)号：US20090097305A1
公开(公告)日：2009-04-16
申请号：US12248964
申请日：2008-10-10
申请人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
发明人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
IPC分类号： G11C11/00 , H01L51/40
CPC分类号： H01L45/06 , C23C16/305 , C23C16/45534 , G11C13/0004 , H01L27/2436 , H01L45/1233 , H01L45/124 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/1683 , H01L45/1691
摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
摘要翻译：一方面，提供了形成相变材料层的方法。该方法包括将包含式1的组合物的反应气体供应到反应室中，将包含Ge（II）的第一源供应到反应室中，并将第二源供应到反应室中。式1是NR1R2R3，其中R1，R2和R3各自独立地选自H，CH3，C2H5，C3H7，C4H9，Si（CH3）3，NH2，NH（CH3），N（CH3） 2，NH（C 2 H 5）和N（C 2 H 5）2。

7. 发明申请

US20080308785A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME 有权
标题翻译：相变存储器件及其形成方法
公开(公告)号：US20080308785A1
公开(公告)日：2008-12-18
申请号：US12136176
申请日：2008-06-10
申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
发明人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , C23C16/34 , C23C16/45536 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/1616 , H01L45/1683
摘要： Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
摘要翻译：提供了一种相变存储器件和用于形成相变存储器件的方法。该方法包括通过向基底提供反应性基团来形成相变材料层。反应性基团可以包括相变材料和氮的前体。

8. 发明授权

US07454109B2 Optical fiber with zero dispersion wavelength shifted to short wavelength region, and optical transmission line and optical transmission system using the same 失效
标题翻译：具有零色散波长的光纤转移到短波长区域，光传输线路和光传输系统使用相同
公开(公告)号：US07454109B2
公开(公告)日：2008-11-18
申请号：US11631553
申请日：2004-07-13
申请人： Hye-Young Park , Jun-Ho Mun
发明人： Hye-Young Park , Jun-Ho Mun
IPC分类号： G02B6/36 , G02B6/02 , G02B6/28
CPC分类号： G02B6/02014 , G02B6/02266 , G02B6/0228 , G02B6/03627
摘要： Disclosed is an optical fiber suitable for WDM system, particularly whose zero-dispersion wavelength is positioned in a short wavelength band less than 1,300 mm. In the optical fiber, dispersion has a positive value, not zero, at 1,310 nm, and a dispersion slope is positive at 1,550 nm with dispersion of 25 ps/nm-km or less. In addition, an effective sectional area is 65 μm2 or less at 1,310 nm, and 80 μm2 or less at 1,550 nm.Thus, though a transmission signal is Raman-amplified at a wavelength band of 1,300˜1,700 nm, transmission characteristics are not deteriorated due to crosstalk between pump signals. In addition, since the optical fiber has smaller effective sectional area than a general single-mode optical fiber with having substantially the same dispersion feature, it gives better Raman gain efficiency than a general single-mode optical fiber.
摘要翻译：公开了适用于WDM系统的光纤，特别是其零色散波长位于小于1300mm的短波长带内。在光纤中，在1310nm处的色散为正值，不为零，在1550nm处的色散斜率为25ps / nm-km或更小的色散。此外，有效截面积在1,310nm为65μm以下，在1,550nm处为80μm以上2μm以下。因此，虽然传输信号在1,300〜1700nm的波长带被拉曼放大，但由于泵浦信号之间的串扰，传输特性不会劣化。此外，由于光纤具有比具有基本上相同色散特征的一般单模光纤更小的有效截面积，因此与一般单模光纤相比，其提供更好的拉曼增益效率。

9. 发明申请

US20080096386A1 METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME 审中-公开
标题翻译：形成相变层的方法及使用其制造半导体存储器件的方法
公开(公告)号：US20080096386A1
公开(公告)日：2008-04-24
申请号：US11876631
申请日：2007-10-22
申请人： Young-Lim PARK , Sung-Lae CHO , Byoung-Jae BAE , Jin-Il LEE , Hye-Young PARK , Ji-Eun LIM
发明人： Young-Lim PARK , Sung-Lae CHO , Byoung-Jae BAE , Jin-Il LEE , Hye-Young PARK , Ji-Eun LIM
IPC分类号： H01L21/02
CPC分类号： H01L27/2436 , C23C16/305 , C23C16/45525 , C23C16/45538 , C23C16/45553 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1675
摘要： A phase-changeable layer and a method of forming the same are disclosed. In the method, a first hydrogen gas is introduced into a reaction chamber into which a substrate is loaded at a first flow rate to form first plasma. A primary cyclic CVD process is carried out using precursors in the reaction chamber to form a lower phase-changeable layer having a first grain size on the substrate. A second hydrogen gas is introduced into the reaction chamber at a second flow rate less than the first flow rate to form second plasma. A secondary cyclic CVD process is carried out using the precursors in the reaction chamber to form an upper phase-changeable layer having a second grain size smaller than the first grain size on the substrate, thereby forming a phase-changeable layer. Thus, the phase-changeable layer may have strong adhesion strength with respect to a lower layer and good electrical characteristics.
摘要翻译：公开了一种相变层及其形成方法。在该方法中，将第一氢气引入反应室中，以第一流速将载体加载到反应室中以形成第一等离子体。使用反应室中的前体进行初级循环CVD工艺，以在衬底上形成具有第一晶粒尺寸的下相变层。将第二氢气以小于第一流量的第二流量引入反应室中以形成第二等离子体。使用反应室中的前体进行二次循环CVD工艺，以形成具有比基板上的第一晶粒尺寸小的第二晶粒尺寸的上相变层，从而形成相变层。因此，相变层可以具有相对于较低层的强粘合强度和良好的电特性。

10. 发明授权

US07340141B2 Optical fiber, and optical transmission line and optical transmission system using the same 失效
标题翻译：光纤，光传输线和光传输系统使用相同
公开(公告)号：US07340141B2
公开(公告)日：2008-03-04
申请号：US11631754
申请日：2004-07-13
申请人： Hye-Young Park , Jun-Ho Mun
发明人： Hye-Young Park , Jun-Ho Mun
IPC分类号： G02B6/02
CPC分类号： G02B6/03633 , G02B6/02014 , G02B6/02242 , G02B6/02266 , G02B6/0228
摘要： Disclosed is an optical fiber suitable for an optical transmission line used in WDM system, particularly a single-mode optical fiber whose zero-dispersion wavelength is positioned in a short wavelength band (less than 1,370 mm) so as to enable high-speed mass-storage signal transmission over S-C-L bands (1,460˜1,625 nm) and whose dispersion value and effective sectional area are optimized. In the optical fiber, a dispersion value is at least 9 ps/nm-km at 1,460 nm, an effective sectional area is 45-65 μm2 at 1,460 rim, a zero-dispersion wavelength exists at 1,370 nm or less, and a dispersion slope is positive. In addition, RDS (Relative Dispersion Slope) is 0.0032˜0.0038 nm−1 at 1,550 nm. Thus, the optical fiber enables to repress non-linearity and signal distortion to the maximum during 320 km repeaterless transmission with a transmission rate of 10 Gb/s or more over S-C-L bands, a channel spacing of 50 GHz or less, 16 channels, and a signal power of 0 dBm/ch or 2 dBm/ch.
摘要翻译：公开了一种适用于WDM系统中使用的光传输线的光纤，特别是其零色散波长位于短波长带（小于1370mm）的单模光纤，以便能够实现高速质量 - 存储信号通过SCL频带（1,460〜1,625 nm）传输，其色散值和有效截面积优化。在光纤中，在1,460nm处的色散值至少为9ps / nm-km，有效截面积为1,460 rim处的有效截面积为45-65μm×2，零色散波长存在于1,370 nm以下，色散斜率为正。另外，在1550nm处，RDS（相对色散斜率）为0.0032〜0.0038nm -1。因此，光纤使得能够在320km无中继传输期间将非线性和信号失真抑制到最大，具有在SCL频带上的10Gb / s以上的传输速率，50GHz以下的信道间隔，16个信道，以及信号功率为0 dBm / ch或2 dBm / ch。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式