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1. 发明申请

US20090246899A1 Method of manufacturing light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US20090246899A1
公开(公告)日：2009-10-01
申请号：US12320020
申请日：2009-01-15
申请人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
发明人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/405 , H01L33/42
摘要： A method of manufacturing light emitting diode has steps of providing a package base, providing a light emitting structure and bonding the light emitting structure on the package base. The package base has a first metal layer and a second metal layer respectively formed on a top and a bottom thereon. The light emitting structure has a substrate, a light emitting lamination and a reflective metal layer. The light emitting lamination is formed on the substrate and has an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent electrode layer deposited on the substrate in sequence. The reflective metal layer is formed on a bottom of the substrate. The first metal layer is connected to the reflective metal layer by an ultrasonic thermal press technique. Therefore, the thermal resistance of the finished LED reduces.
摘要翻译：制造发光二极管的方法具有提供封装基底的步骤，提供发光结构并将发光结构结合到封装基底上。封装基底具有分别形成在其顶部和底部上的第一金属层和第二金属层。发光结构具有基板，发光层叠体和反射金属层。发光层叠形成在基板上，并且依次具有在基板上沉积的n型半导体层，发光层，p型半导体层和透明电极层。反射金属层形成在基板的底部。第一金属层通过超声波热压技术连接到反射金属层。因此，成品LED的热阻降低。

2. 发明授权

US07951624B2 Method of manufacturing light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US07951624B2
公开(公告)日：2011-05-31
申请号：US12320020
申请日：2009-01-15
申请人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
发明人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/405 , H01L33/42
摘要： A method of manufacturing light emitting diode has steps of providing a package base, providing a light emitting structure and bonding the light emitting structure on the package base. The package base has a first metal layer and a second metal layer respectively formed on a top and a bottom thereon. The light emitting structure has a substrate, a light emitting lamination and a reflective metal layer. The light emitting lamination is formed on the substrate and has an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent electrode layer deposited on the substrate in sequence. The reflective metal layer is formed on a bottom of the substrate. The first metal layer is connected to the reflective metal layer by an ultrasonic thermal press technique. Therefore, the thermal resistance of the finished LED reduces.
摘要翻译：制造发光二极管的方法具有提供封装基底的步骤，提供发光结构并将发光结构结合在封装基底上。封装基底具有分别形成在其顶部和底部上的第一金属层和第二金属层。发光结构具有基板，发光层叠体和反射金属层。发光层叠形成在基板上，并且依次具有在基板上沉积的n型半导体层，发光层，p型半导体层和透明电极层。反射金属层形成在基板的底部。第一金属层通过超声波热压技术连接到反射金属层。因此，成品LED的热阻降低。

3. 发明授权

US07875473B2 Method of manufacturing light emitting diode device 失效
公开(公告)号：US07875473B2
公开(公告)日：2011-01-25
申请号：US12776367
申请日：2010-05-07
申请人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
发明人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/50 , H01L24/16 , H01L33/0095 , H01L2924/12036 , H01L2924/12041 , H01L2933/0041 , H01L2924/00
摘要： A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

4. 发明申请

US20100055814A1 METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE 失效
公开(公告)号：US20100055814A1
公开(公告)日：2010-03-04
申请号：US12615262
申请日：2009-11-09
申请人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
发明人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
IPC分类号： H01L21/50
CPC分类号： H01L33/50 , H01L24/16 , H01L33/0095 , H01L2924/12036 , H01L2924/12041 , H01L2933/0041 , H01L2924/00
摘要： A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

5. 发明申请

US20100047940A1 METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE 失效
公开(公告)号：US20100047940A1
公开(公告)日：2010-02-25
申请号：US12611852
申请日：2009-11-03
申请人： Ben FAN , Hsin-Chuan WENG , Kuo-Kuang YEH
发明人： Ben FAN , Hsin-Chuan WENG , Kuo-Kuang YEH
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L24/16 , H01L33/0095 , H01L2924/12036 , H01L2924/12041 , H01L2933/0041 , H01L2924/00
摘要： A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

6. 发明申请

US20090215210A1 METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE 审中-公开
标题翻译：制造发光二极管器件的方法
公开(公告)号：US20090215210A1
公开(公告)日：2009-08-27
申请号：US12351668
申请日：2009-01-09
申请人： Ben FAN , Hsin-Chuan WENG , Kuo-Kuang YEH
发明人： Ben FAN , Hsin-Chuan WENG , Kuo-Kuang YEH
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L24/16 , H01L33/0095 , H01L2924/12036 , H01L2924/12041 , H01L2933/0041 , H01L2924/00
摘要： A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.
摘要翻译：制造发光二极管装置的方法具有以下步骤：通过在引线接合区域上设置分隔板并在LED的发光侧涂覆荧光体来将LED芯片的发光侧与引线接合区隔离芯片处于荧光体涂层工艺中。该方法可以应用于制造具有倒装芯片结构或垂直芯片结构的LED器件。根据该方法，可以直接制造白色LED器件而不采用荧光体封装技术，从而简化了白色LED器件的整体封装处理。

7. 发明申请

US20090184337A1 Light-Emitting Diode, Package Structure Thereof and Manufacturing Method for the Same 审中-公开
标题翻译：发光二极管，封装结构及其制造方法
公开(公告)号：US20090184337A1
公开(公告)日：2009-07-23
申请号：US12351011
申请日：2009-01-09
申请人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
发明人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
IPC分类号： H01L33/00 , H01L51/52 , H01L21/04
CPC分类号： H01L33/385 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/48247 , H01L2224/48463 , H01L2224/73265
摘要： A light-emitting diode includes a sapphire substrate, an n-type semiconductor, a light-emitting layer, a p-type semiconductor layer, an anode and a conductive material. The n-type semiconductor layer is formed on the sapphire substrate and has a side surface, a center section and an edge around the center portion. The light-emitting layer is formed on the n-type semiconductor layer. The p-type semiconductor layer is formed on the light-emitting layer. The anode is formed on the p-type semiconductor layer. The conductive material is formed on the bottom surface of the sapphire substrate and is in contact with the n-type semiconductor layer.
摘要翻译：发光二极管包括蓝宝石衬底，n型半导体，发光层，p型半导体层，阳极和导电材料。 n型半导体层形成在蓝宝石衬底上，并且具有侧表面，中心部分和围绕中心部分的边缘。发光层形成在n型半导体层上。 p型半导体层形成在发光层上。阳极形成在p型半导体层上。导电材料形成在蓝宝石衬底的底表面上并与n型半导体层接触。

8. 发明申请

US20090230407A1 LED DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译： LED装置及其制造方法
公开(公告)号：US20090230407A1
公开(公告)日：2009-09-17
申请号：US12354281
申请日：2009-01-15
申请人： Ben FAN , Hsin-Chuan Weng , Kuo-Kuang Yeh
发明人： Ben FAN , Hsin-Chuan Weng , Kuo-Kuang Yeh
IPC分类号： H01L33/00 , H01L21/34
CPC分类号： H01L33/22 , H01L33/42 , H01L2933/0091
摘要： An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device.
摘要翻译： LED器件具有基板，形成在基板上的N型半导体层，N型半导体层上的发光层，发光层上的P型半导体层和形成在发光层上的透明电极层 P型半导体层。透明电极层的上表面形成为具有多个微凹凸结构，以减轻由全反射引起的发光损失，并提高LED器件的发光效率。

9. 发明授权

US07875471B2 Method of manufacturing light emitting diode device 失效
标题翻译：制造发光二极管装置的方法
公开(公告)号：US07875471B2
公开(公告)日：2011-01-25
申请号：US12611852
申请日：2009-11-03
申请人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
发明人： Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/50 , H01L24/16 , H01L33/0095 , H01L2924/12036 , H01L2924/12041 , H01L2933/0041 , H01L2924/00
摘要： A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.
摘要翻译：制造发光二极管装置的方法具有以下步骤：通过在引线接合区域上设置分隔板并在LED的发光侧涂覆荧光体来将LED芯片的发光侧与引线接合区隔离芯片处于荧光体涂层工艺中。该方法可以应用于制造具有倒装芯片结构或垂直芯片结构的LED器件。根据该方法，可以直接制造白色LED器件而不采用荧光体封装技术，从而简化了白色LED器件的整体封装处理。

10. 发明申请

US20100216265A1 METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE 失效
标题翻译：制造发光二极管器件的方法
公开(公告)号：US20100216265A1
公开(公告)日：2010-08-26
申请号：US12776367
申请日：2010-05-07
申请人： Ben FAN , Hsin-Chuan WENG , Kuo-Kuang YEH
发明人： Ben FAN , Hsin-Chuan WENG , Kuo-Kuang YEH
IPC分类号： H01L33/44 , H01L33/48
CPC分类号： H01L33/50 , H01L24/16 , H01L33/0095 , H01L2924/12036 , H01L2924/12041 , H01L2933/0041 , H01L2924/00
摘要： A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.
摘要翻译：制造发光二极管装置的方法具有以下步骤：通过在引线接合区域上设置分隔板并在LED的发光侧涂覆荧光体来将LED芯片的发光侧与引线接合区隔离芯片处于荧光体涂层工艺中。该方法可以应用于制造具有倒装芯片结构或垂直芯片结构的LED器件。根据该方法，可以直接制造白色LED器件而不采用荧光体封装技术，从而简化了白色LED器件的整体封装处理。

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