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1. 发明授权

US06797627B1 Dry-wet-dry solvent-free process after stop layer etch in dual damascene process 失效
标题翻译：在双镶嵌工艺中停止层蚀刻之后的干湿干燥无溶剂工艺
公开(公告)号：US06797627B1
公开(公告)日：2004-09-28
申请号：US10005803
申请日：2001-12-05
申请人： Hsin-Ching Shih , Yi-Nien Su , Li-Te S. Lin , Li-Chie Chiao
发明人： Hsin-Ching Shih , Yi-Nien Su , Li-Te S. Lin , Li-Chie Chiao
IPC分类号： H01L21301
CPC分类号： H01L21/31116 , H01L21/02046 , H01L21/31111 , H01L21/32136 , H01L21/76802 , H01L21/76829
摘要： A new method is provided for the removal of polymer, possibly mixed with copper oxide residue, from exposed surfaces after an etch stop layer has been removed. The exposed surfaces are treated with a first plasma etch followed by a DI water rinse after which a second plasma etch of the exposed surfaces is performed. By selecting the chemistry and the conditions for the first and the second plasma etch, polymer residues and formed copper oxide residues are removed from the exposed surfaces.
摘要翻译：提供了一种新的方法，用于在蚀刻停止层被去除之后从暴露表面除去可能与氧化铜残留物混合的聚合物。暴露的表面用第一等离子体蚀刻然后进行去离子水冲洗处理，然后进行暴露表面的第二等离子体蚀刻。通过选择第一和第二等离子体蚀刻的化学和条件，从暴露的表面去除聚合物残余物和形成的氧化铜残留物。

2. 发明授权

US07122484B2 Process for removing organic materials during formation of a metal interconnect 有权
标题翻译：在形成金属互连件期间去除有机材料的方法
公开(公告)号：US07122484B2
公开(公告)日：2006-10-17
申请号：US10833558
申请日：2004-04-28
申请人： Baw-Ching Perng , Yi-Chen Huang , Jun-Lung Huang , Bor-Wen Chan , Peng-Fu Hsu , Hsin-Ching Shih , Lawrance Hsu , Hun-Jan Tao
发明人： Baw-Ching Perng , Yi-Chen Huang , Jun-Lung Huang , Bor-Wen Chan , Peng-Fu Hsu , Hsin-Ching Shih , Lawrance Hsu , Hun-Jan Tao
IPC分类号： H01L21/469 , H01L21/44
CPC分类号： H01L21/76814 , C11D3/3947 , C11D7/50 , C11D11/0047 , G03F7/423 , H01L21/02063 , H01L21/02101 , H01L21/31133 , H01L21/31144 , H01L21/76808
摘要： A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.
摘要翻译：公开了一种从基底上的低k电介质层和金属层上方的开口除去有机材料的方法。将由一种或多种添加剂如羟胺或铵盐组成的臭氧水溶液作为喷雾或浸渍施用。可以加入螯合剂以保护金属层免于氧化。可以将二酮加入到臭氧水溶液中或在随后的步骤中以气相或液相的形式施加，以除去在臭氧处理期间形成的任何金属氧化物。可以使用包括CO 2和臭氧的超临界流体混合物来除去不易被上述液体溶液剥离的有机残留物。去除方法防止低k电介质层的介电常数和折射率的变化，并且清洁地去除提高器件性能的残留物。

3. 发明申请

US20050245082A1 Process for removing organic materials during formation of a metal interconnect 有权
标题翻译：在形成金属互连件期间去除有机材料的方法
公开(公告)号：US20050245082A1
公开(公告)日：2005-11-03
申请号：US10833558
申请日：2004-04-28
申请人： Baw-Ching Perng , Yi-Chen Huang , Jun-Lung Huang , Bor-Wen Chan , Peng-Fu Hsu , Hsin-Ching Shih , Lawrance Sheu , Hun-Jan Tao
发明人： Baw-Ching Perng , Yi-Chen Huang , Jun-Lung Huang , Bor-Wen Chan , Peng-Fu Hsu , Hsin-Ching Shih , Lawrance Sheu , Hun-Jan Tao
IPC分类号： C11D7/50 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76814 , C11D3/3947 , C11D7/50 , C11D11/0047 , G03F7/423 , H01L21/02063 , H01L21/02101 , H01L21/31133 , H01L21/31144 , H01L21/76808
摘要： A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.
摘要翻译：公开了一种从基底上的低k电介质层和金属层上方的开口除去有机材料的方法。将由一种或多种添加剂如羟胺或铵盐组成的臭氧水溶液作为喷雾或浸渍施用。可以加入螯合剂以保护金属层免于氧化。可以将二酮加入到臭氧水溶液中或在随后的步骤中以气相或液相的形式施加，以除去在臭氧处理期间形成的任何金属氧化物。可以使用包括CO 2和臭氧的超临界流体混合物来除去不易被上述液体溶液剥离的有机残留物。去除方法防止低k电介质层的介电常数和折射率的变化，并且清洁地去除提高器件性能的残留物。

4. 发明授权

US06974505B2 Tool for cleaning substrates 失效
标题翻译：清洁基板的工具
公开(公告)号：US06974505B2
公开(公告)日：2005-12-13
申请号：US10272623
申请日：2002-10-16
申请人： Hsin-Ching Shih , Chun-Li Chou , Ming-Hong Hsieh , Hong-J. Tao
发明人： Hsin-Ching Shih , Chun-Li Chou , Ming-Hong Hsieh , Hong-J. Tao
IPC分类号： B08B3/10 , B08B5/00 , H01L21/00 , B08B7/04
CPC分类号： H01L21/67057 , B08B3/10 , B08B3/102 , B08B5/00 , H01L21/67028 , Y10S134/902
摘要： A cleaning tool for cleaning substrates, comprising a circulation conduit through which is circulated a cleaning liquid or gas. The circulation conduit is disposed in fluid communication with an upstream flow chamber and a downstream cleaning chamber, the cross-sectional area of which cleaning chamber is less than the cross-sectional area of the flow chamber. In use, the cleaning chamber receives a wafer substrate for cleaning of particles or removal of polymer films from the substrate. The smaller cross-sectional area of the cleaning chamber accelerates the flow of a cleaning fluid flowing through the cleaning chamber from the flow chamber. The rapidly-flowing cleaning fluid removes the particles and/or films from the substrate while preventing dropping of the removed particles or re-deposition of the film back onto the substrate. A particle filter may be provided in the circulation conduit downstream of the cleaning chamber for removing the particles.
摘要翻译：一种用于清洁基板的清洁工具，包括循环管道，循环管道使清洗液体或气体循环。循环管道设置成与上游流动室和下游清洁室流体连通，其清洁室的横截面积小于流动室的横截面面积。在使用中，清洁室接收用于清洁颗粒的晶片基板或从基板去除聚合物膜。清洁室的较小的横截面面积加速了流动清洁室中从流动室流出的清洁流体的流动。快速流动的清洁流体从衬底去除颗粒和/或膜，同时防止去除的颗粒的滴落或者将膜重新沉积到衬底上。颗粒过滤器可以设置在清洁室下游的循环管道中，用于除去颗粒。

5. 发明申请

US20050184388A1 Seal ring design without stop layer punch through during via etch 审中-公开
标题翻译：密封圈设计，无停止层通孔蚀刻过程中
公开(公告)号：US20050184388A1
公开(公告)日：2005-08-25
申请号：US10782365
申请日：2004-02-19
申请人： Hsin-Ching Shih , Kang-Cheng Lin , Chao-Cheng Chen , Hun-Jan Tao
发明人： Hsin-Ching Shih , Kang-Cheng Lin , Chao-Cheng Chen , Hun-Jan Tao
IPC分类号： H01L23/48 , H01L23/58
CPC分类号： H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： In accordance with the objective of the invention a new method is provided for the creation of a seal ring having dissimilar elements. The Critical Dimensions of the seal ring are selected with respect to the CD of other device features, such a seal vias, such that the difference in etch sensitivity between the created seal ring and the via holes is removed. All etch of the simultaneously etched features is completed at the same time, avoiding punch through of an underlying layer of etch stop material.
摘要翻译：根据本发明的目的，提供了一种用于创建具有不同元件的密封环的新方法。密封环的临界尺寸相对于其它装置特征（例如密封通孔）的CD被选择，使得所产生的密封环和通孔之间的蚀刻敏感性的差异被去除。同时蚀刻的特征的所有蚀刻同时完成，避免冲蚀下一层蚀刻停止材料。

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