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    • 3. 发明申请
    • Resin Composition, and Prepreg and Printed Circuit Board Prepared Using the Same
    • 树脂组合物,以及使用其制备的预浸料和印刷电路板
    • US20120097437A1
    • 2012-04-26
    • US13006530
    • 2011-01-14
    • Shih-Hao LiaoChih-Wei LiaoHsuan-Hao HsuHsien-Te ChenTsung-Hsien Lin
    • Shih-Hao LiaoChih-Wei LiaoHsuan-Hao HsuHsien-Te ChenTsung-Hsien Lin
    • H05K1/03C08K3/34C08L63/00
    • H05K1/0373C08G59/4014C08L63/00H05K1/0366H05K3/022
    • A resin composition is provided. The resin composition comprises: an epoxy resin; a polymer solution as a hardener, which is prepared by the following steps: (a) dissolving an N,O-heterocyclic compound into a first solvent to form a first reaction solution, wherein the N,O-heterocyclic compound is of Formula I or Formula II: wherein, R1 to R3, W1, W2, m, n, p and q are defined in the specification; (b) heating the first reaction solution to a first temperature to carry out a ring-opening polymerization; and (c) cooling the first reaction solution to a second temperature to substantially terminate the ring-opening polymerization, and thus obtain the polymer solution, wherein, the first solvent is unreactive to the N,O-heterocyclic compound; the first temperature is higher than the softening temperature of the N,O-heterocyclic compound and lower than the boiling point of the first solvent; and the second temperature is lower than the first temperature, and wherein, the amount of the hardener, based on the solid, is about 20 parts by weight to about 200 parts by weight per 100 parts by weight of the epoxy resin.
    • 提供树脂组合物。 树脂组合物包含:环氧树脂; 作为硬化剂的聚合物溶液,其通过以下步骤制备:(a)将N,O-杂环化合物溶解在第一溶剂中以形成第一反应溶液,其中所述N,O-杂环化合物为式I或 式II:其中,R1至R3,W1,W2,m,n,p和q在说明书中定义; (b)将第一反应溶液加热至第一温度以进行开环聚合; 和(c)将第一反应溶液冷却至第二温度以基本上终止开环聚合,从而获得聚合物溶液,其中第一溶剂对N,O-杂环化合物不反应; 第一温度高于N,O-杂环化合物的软化温度,低于第一溶剂的沸点; 并且第二温度低于第一温度,并且其中,基于固体的固化剂的量为每100重量份环氧树脂约20重量份至约200重量份。
    • 10. 发明授权
    • Stacked multi-chip
    • 堆叠多芯片
    • US08174126B2
    • 2012-05-08
    • US12882805
    • 2010-09-15
    • Ting-Ting HwangHsien-Te Chen
    • Ting-Ting HwangHsien-Te Chen
    • H01L23/12H01L23/52H01L23/48
    • H01L23/5286H01L23/481H01L25/0657H01L2223/6616H01L2223/6666H01L2225/06513H01L2225/06544H01L2924/0002H01L2924/00
    • A stacked multi-chip comprises a base layer, a first chip, a first stacked chip and at least one second stacked chip. The base layer comprises a mounting panel and a redistributed layer. The redistributed layer is mounted on the mounting panel. The first chip comprises an electrically non-conductive layer and a connective layer. The electrically non-conductive layer comprises a TSV channel. The connective layer abuts the redistributed layer. The first stacked chip is mounted on the first chip and comprises an electrically non-conductive layer and a connective layer. The electrically non-conductive layer comprises a TSV channel that is connected to the TSV channel of the first chip. The second stacked chip is mounted on the first stacked chip and comprises an electrically non-conductive layer and a connective layer. The electrically non-conductive layer comprises a TSV channel. The connective layer is connected to the connective layer of the first stacked chip.
    • 堆叠式多芯片包括基底层,第一芯片,第一堆叠芯片和至少一个第二堆叠芯片。 基层包括安装面板和再分布层。 再分布层安装在安装面板上。 第一芯片包括非导电层和连接层。 非导电层包括TSV通道。 连接层邻接重新分布的层。 第一堆叠芯片安装在第一芯片上并且包括非导电层和连接层。 非导电层包括连接到第一芯片的TSV通道的TSV通道。 第二堆叠芯片安装在第一堆叠芯片上,并且包括非导电层和连接层。 非导电层包括TSV通道。 连接层连接到第一堆叠芯片的连接层。