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1. 发明申请

US20110273417A1 GATE SHIFT REGISTER AND DISPLAY DEVICE USING THE SAME 有权
标题翻译： GATE移位寄存器和使用该寄存器的显示器件
公开(公告)号：US20110273417A1
公开(公告)日：2011-11-10
申请号：US12913632
申请日：2010-10-27
申请人： Hongjae Shin , Byunghyun Park , Miyoung Son
发明人： Hongjae Shin , Byunghyun Park , Miyoung Son
IPC分类号： G09G5/00
CPC分类号： G09G3/20 , G09G2310/0267 , G09G2310/0286
摘要： A gate shift register and a display device using the same are disclosed. The gate shift register includes a plurality of stages that receive a plurality of gate shift clocks and sequentially output a scan pulse. A k-th stage of the plurality of stages includes a scan direction controller for converting a shift direction of the scan pulse in response to carry signals of previous stages input through first and second input terminals and carry signals of next stages input through third and fourth input terminals, a node controller for controlling charging and discharge operations of each of Q1, Q2, QB1, and QB2 nodes, a floating prevention unit for applying a low potential voltage to a gate electrode of a discharge TFT based on a voltage of the QB1 node or the QB2 node, and an output unit for outputting first and second scan pulses.
摘要翻译：公开了一种门移位寄存器和使用其的显示装置。栅极移位寄存器包括接收多个栅极移位时钟并顺序地输出扫描脉冲的多个级。多级的第k级包括扫描方向控制器，用于响应于通过第一和第二输入端输入的先前级的进位信号来转换扫描脉冲的移位方向，并且传送通过第三和第四输入的下一级输入信号输入端子，用于控制Q1，Q2，QB1和QB2节点中的每一个的充电和放电操作的节点控制器，用于基于QB1的电压向放电TFT的栅电极施加低电位电压的浮动防止单元节点或QB2节点，以及用于输出第一和第二扫描脉冲的输出单元。

2. 发明授权

US08878765B2 Gate shift register and display device using the same 有权
标题翻译：门移位寄存器和使用其的显示装置
公开(公告)号：US08878765B2
公开(公告)日：2014-11-04
申请号：US12913632
申请日：2010-10-27
申请人： Hongjae Shin , Byunghyun Park , Miyoung Son
发明人： Hongjae Shin , Byunghyun Park , Miyoung Son
IPC分类号： G09G3/36 , G09G3/20
CPC分类号： G09G3/20 , G09G2310/0267 , G09G2310/0286
摘要： A gate shift register and a display device using the same are disclosed. The gate shift register includes a plurality of stages that receive a plurality of gate shift clocks and sequentially output a scan pulse. A k-th stage of the plurality of stages includes a scan direction controller for converting a shift direction of the scan pulse in response to carry signals of previous stages input through first and second input terminals and carry signals of next stages input through third and fourth input terminals, a node controller for controlling charging and discharge operations of each of Q1, Q2, QB1, and QB2 nodes, a floating prevention unit for applying a low potential voltage to a gate electrode of a discharge TFT based on a voltage of the QB1 node or the QB2 node, and an output unit for outputting first and second scan pulses.
摘要翻译：公开了一种门移位寄存器和使用其的显示装置。栅极移位寄存器包括接收多个栅极移位时钟并顺序地输出扫描脉冲的多个级。多级的第k级包括扫描方向控制器，用于响应于通过第一和第二输入端输入的先前级的进位信号来转换扫描脉冲的移位方向，并且传送通过第三和第四输入的下一级输入信号输入端子，用于控制Q1，Q2，QB1和QB2节点中的每一个的充电和放电操作的节点控制器，用于基于QB1的电压向放电TFT的栅电极施加低电位电压的浮动防止单元节点或QB2节点，以及用于输出第一和第二扫描脉冲的输出单元。

3. 发明申请

US20100230758A1 SEMICONDUCTOR DEVICE WITH IMPROVED STRESSOR SHAPE 审中-公开
标题翻译：具有改进的压力形状的半导体器件
公开(公告)号：US20100230758A1
公开(公告)日：2010-09-16
申请号：US12697572
申请日：2010-02-01
申请人： Chong Kwang CHANG , HwaSung Rhee , MyungSun Kim , NaeIn Lee , HongJae Shin
发明人： Chong Kwang CHANG , HwaSung Rhee , MyungSun Kim , NaeIn Lee , HongJae Shin
IPC分类号： H01L27/088 , H01L21/71
CPC分类号： H01L29/0847 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A formation method and resulting strained semiconductor device are provided, the formation method including forming transistors on a substrate, each transistor having a gate disposed over a channel region, etching or annealing an elongated trench between adjacent channel regions, where the trench has a lower boundary that is deeper towards its ends than towards its center, and conformably embedding an elongated stress region in the trench between adjacent channel regions; and the resulting strained semiconductor device including transistors, each having a gate disposed over a channel region, and elongated stress regions disposed between adjacent channel regions, wherein each of the elongated stress regions has a lower boundary that is deeper towards its ends than towards its center.
摘要翻译：提供一种形成方法和产生的应变半导体器件，所述形成方法包括在衬底上形成晶体管，每个晶体管具有设置在沟道区上方的栅极，蚀刻或退火相邻沟道区之间的细长沟槽，其中沟槽具有下边界其端部比朝向其中心更深，并且在相邻通道区域之间的沟槽中顺应地嵌入细长的应力区域; 并且所得到的应变半导体器件包括晶体管，每个晶体管均具有设置在沟道区域上的栅极，以及设置在相邻沟道区域之间的细长应力区域，其中每个细长应力区域具有朝向其端部比其中心更深的下边界。

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