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    • 1. 发明授权
    • Touch display panels and manufacture methods thereof
    • 触摸显示面板及其制造方法
    • US09081446B2
    • 2015-07-14
    • US12878951
    • 2010-09-09
    • Chia-Mei LiuTsai-Lai ChengWei-Lun LiaoGuan-Hua YehHong-Gi Wu
    • Chia-Mei LiuTsai-Lai ChengWei-Lun LiaoGuan-Hua YehHong-Gi Wu
    • G06F3/041G06F3/044H01L27/12H01L27/13
    • G06F3/044G06F3/0412H01L27/12H01L27/1214H01L27/1255H01L27/13
    • A touch display panel is provided and includes a substrate, a plurality of gate lines, a plurality of data lines, a plurality of data output lines, a plurality of thin film transistors, and a plurality of detection capacitors. The gate lines are disposed on the substrate. The data lines are disposed on the substrate. The data lines and the gate lines define a plurality of pixel regions on the substrate. The data output lines are disposed on the substrate, and each data output line is disposed next to one data line. The thin film transistors are respectively disposed in the pixel regions. Each thin film transistor is electrically connected to the corresponding gate line and the corresponding data line. The detection capacitors are respectively disposed in the pixel regions. Each detection capacitor is electrically connected to the corresponding gate line and the corresponding data line.
    • 提供一种触摸显示面板,包括基板,多条栅极线,多条数据线,多条数据输出线,多条薄膜晶体管和多条检测电容器。 栅极线设置在基板上。 数据线设置在基板上。 数据线和栅极线在衬底上限定多个像素区域。 数据输出线设置在基板上,并且每个数据输出线设置在一个数据线旁边。 薄膜晶体管分别设置在像素区域中。 每个薄膜晶体管电连接到相应的栅极线和相应的数据线。 检测电容器分别设置在像素区域中。 每个检测电容器电连接到相应的栅极线和相应的数据线。
    • 2. 发明授权
    • Method for fabricating low temperature poly-silicon thin film transistor substrate
    • 制造低温多晶硅薄膜晶体管基板的方法
    • US07985636B2
    • 2011-07-26
    • US12583461
    • 2009-08-21
    • Guan-Hua YehTsai-Lai ChengHong-Gi Wu
    • Guan-Hua YehTsai-Lai ChengHong-Gi Wu
    • H01L21/336
    • H01L27/127H01L27/1255H01L27/1288
    • An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S1, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode contact region of a second type TFT is formed. In step S2, the source electrode contact region and the drain electrode contact region of the first type TFT are heavily doped with a first dopant. In step S3, gate electrodes of the first and the second type TFT are formed. In step S4, the source electrode contact regions and drain electrode contact regions of the first and second type TFTs are heavily doped with a second dopant. The first dopant and the second dopant are compensative, and the number ratio of the first dopant to the second dopant is approximately 2 to 1.
    • 用于制造LTPS-TFT基板的示例性方法如下。 在步骤S1中,形成包括第一类TFT的源极电极接触区域和漏极电极接触区域,第二类型TFT的源极电极接触区域和漏极接触区域的p-Si图案。 在步骤S2中,第一类型TFT的源电极接触区域和漏电极接触区域被重掺杂第一掺杂剂。 在步骤S3中,形成第一和第二类型TFT的栅电极。 在步骤S4中,第一和第二类型TFT的源电极接触区域和漏电极接触区域被重掺杂第二掺杂剂。 第一掺杂剂和第二掺杂剂是补偿性的,并且第一掺杂剂与第二掺杂剂的数量比为约2:1。
    • 7. 发明申请
    • Liquid crystal panel having notches for repair
    • 液晶面板有修补缺口
    • US20090066869A1
    • 2009-03-12
    • US12231805
    • 2008-09-05
    • Hong-Gi WuChien-Ting Lai
    • Hong-Gi WuChien-Ting Lai
    • G02F1/136
    • G02F1/136259G02F2001/136268
    • A liquid crystal panel of the present disclosure includes a first common electrode defining a plurality of first common electrode portions, a plurality of second common electrode portions connected to the first common electrode, and a plurality of pixel electrodes. Each pixel electrode overlaps one of the first common electrode portions and a corresponding one of the second common electrode portions, thereby forming storage capacitors therebetween. Each second common electrode portion defines a first notch adjacent to the pixel electrode. There is no overlap between the pixel electrode and the second common electrode portion at the first notch.
    • 本公开的液晶面板包括限定多个第一公共电极部分的第一公共电极,连接到第一公共电极的多个第二公共电极部分和多个像素电极。 每个像素电极与第一公共电极部分中的一个和第二公共电极部分中的相应一个重叠,由此在其间形成存储电容器。 每个第二公共电极部分限定与像素电极相邻的第一凹口。 像素电极和第二公共电极部分在第一缺口处没有重叠。
    • 10. 发明申请
    • Pixel circuit of active matrix organic light emitting diode
    • 有源矩阵有机发光二极管的像素电路
    • US20100060626A1
    • 2010-03-11
    • US12387975
    • 2009-05-11
    • Shih-Chang WangHong-Gi Wu
    • Shih-Chang WangHong-Gi Wu
    • G09G5/00G09G3/32
    • G09G3/3233G09G2300/0842G09G2320/0295G09G2320/043
    • A pixel circuit of an active matrix organic light emitting diode (AMOLED) device includes a scan line, a data line, a first switching thin film transistor (TFT), a capacitor connected between a drain electrode of the first switching TFT and ground, an organic light emitting diode, a driving TFT, and a control circuit. A gate electrode and a source electrode of the first switching TFT are respectively connected to the scan line and the data line. A gate electrode of the driving TFT is connected to a drain electrode of the first switching TFT, and a driving current is applied to the organic light emitting diode via the driving TFT. The control circuit connected to the data line detects a voltage value of the driving current, and regulates a voltage value of the data signal according to the voltage value of the driving current.
    • 有源矩阵有机发光二极管(AMOLED)器件的像素电路包括扫描线,数据线,第一开关薄膜晶体管(TFT),连接在第一开关TFT的漏电极和地之间的电容器, 有机发光二极管,驱动TFT和控制电路。 第一开关TFT的栅电极和源电极分别连接到扫描线和数据线。 驱动TFT的栅电极连接到第一开关TFT的漏电极,驱动电流通过驱动TFT施加到有机发光二极管。 连接到数据线的控制电路检测驱动电流的电压值,并根据驱动电流的电压值调节数据信号的电压值。