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1. 发明授权

US4026735A Method for growing thin semiconducting epitaxial layers 失效
标题翻译：生长薄半导体外延层的方法
公开(公告)号：US4026735A
公开(公告)日：1977-05-31
申请号：US717806
申请日：1976-08-26
申请人： G. Sanjiv Kamath , Hollen P. Mitchell
发明人： G. Sanjiv Kamath , Hollen P. Mitchell
IPC分类号： C30B19/06 , H01L21/208
CPC分类号： C30B19/068 , C30B19/062 , Y10S117/90
摘要： The specification describes a liquid phase epitaxial (LPE) crystal growth process wherein semi-insulating epitaxial layers of gallium arsenide (GaAs) are formed on selected substrates by dipping the substrates into a saturated solution of GaAs in gallium. Prior to exposing the substrates to the above solution, the substrates are shielded by a nonreactive container of a material possessing a high thermal conductivity which, when immersed in the solution, serves to establish a thermal equilibrium between the substrate and the solution. This insures good nucleation in and crystal growth of the high quality semiconductor layers grown, and these layers may be grown to minimum thicknesses on the order of 0.2 micrometers or less with excellent control.
摘要翻译：本说明书描述了一种液相外延（LPE）晶体生长工艺，其中通过将衬底浸入镓中的GaAs的饱和溶液中，在选定的衬底上形成砷化镓（GaAs）的半绝缘外延层。在将衬底暴露于上述溶液之前，衬底被具有高导热性的材料的非反应性容器屏蔽，当浸入溶液中时，其用于在衬底和溶液之间建立热平衡。这确保生长的高质量半导体层的良好的成核和晶体生长，并且这些层可以生长至0.2微米或更小的最小厚度，具有优异的控制。

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