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1. 发明申请

US20090179303A1 Vertical Bipolar Transistor 有权
标题翻译：垂直双极晶体管
公开(公告)号：US20090179303A1
公开(公告)日：2009-07-16
申请号：US11792015
申请日：2005-12-12
申请人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmayer
发明人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmayer
IPC分类号： H01L29/732 , H01L21/331
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterally surrounds the second heightwise portion, which is further towards the substrate interior as viewed from the base, of the first semiconductor electrode, and which rests with its underside directly on the insulation region.
摘要翻译：一种垂直异双极晶体管，包括第一导电类型的半导体材料的衬底和设置在其中的绝缘区域，布置在绝缘区域的开口中的第一半导体电极，并且包括第二导电类型的单晶半导体材料，收集器或发射器的形式，并且具有第一高度部分和相邻的第二高度部分，其在高度方向上远离基板内部，其中只有第一高度方向部分被垂直的横向方向上的绝缘区域包围第二导电类型的半导体材料的第二半导体电极是另一种类型的半导体电极的形式的第二半导体电极，第一导电类型的单晶半导体材料的基底和具有第一导电类型的基底连接区域单晶部分横向方向横向地围绕第二高度方向部分，第二高度方向部分从第一半导体电极的基部朝向基板内部，并且其下侧直接位于绝缘区域上。

2. 发明授权

US07880270B2 Vertical bipolar transistor 有权
标题翻译：垂直双极晶体管
公开(公告)号：US07880270B2
公开(公告)日：2011-02-01
申请号：US11792015
申请日：2005-12-12
申请人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmeyer
发明人： Bernd Heinemann , Holger Rücker , Jürgen Drews , Steffen Marschmeyer
IPC分类号： H01L29/732
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterally surrounds the second heightwise portion, which is further towards the substrate interior as viewed from the base, of the first semiconductor electrode, and which rests with its underside directly on the insulation region.
摘要翻译：一种垂直异双极晶体管，包括第一导电类型的半导体材料的衬底和设置在其中的绝缘区域，布置在绝缘区域的开口中的第一半导体电极，并且包括第二导电类型的单晶半导体材料，收集器或发射器的形式，并且具有第一高度部分和相邻的第二高度部分，其在高度方向上远离基板内部，其中只有第一高度方向部分被垂直的横向方向上的绝缘区域包围第二导电类型的半导体材料的第二半导体电极是另一种类型的半导体电极的形式的第二半导体电极，第一导电类型的单晶半导体材料的基底和具有第一导电类型的基底连接区域单晶部分横向方向横向地围绕第二高度方向部分，第二高度方向部分从第一半导体电极的基部朝向基板内部，并且其下侧直接位于绝缘区域上。

3. 发明授权

US07323390B2 Semiconductor device and method for production thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07323390B2
公开(公告)日：2008-01-29
申请号：US10496531
申请日：2002-12-02
申请人： Bernd Heinemann , Dieter Knoll , Karl-Ernst Ehwald , Holger Rücker
发明人： Bernd Heinemann , Dieter Knoll , Karl-Ernst Ehwald , Holger Rücker
IPC分类号： H01L21/31
CPC分类号： H01L29/66287 , H01L29/0821 , H01L29/1004 , H01L29/7325
摘要： The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an associated base connection region. The collector and the collector contact region are formed in the same active region. In addition the base connection region extends partially over the active region and is separated from the surface of the active region by an insulator layer.
摘要翻译：根据本发明的半导体器件包括衬底，限定半导体衬底的有源区域的场绝缘区域，集电极，与集电极相关联的至少一个集电极接触区域以及具有相关联的基极连接区域的基极。集电极和集电极接触区形成在相同的有源区中。此外，基极连接区部分地延伸到有源区上方并且通过绝缘体层与有源区的表面分离。

4. 发明授权

US07304348B2 DMOS transistor 失效
标题翻译： DMOS晶体管
公开(公告)号：US07304348B2
公开(公告)日：2007-12-04
申请号：US10487174
申请日：2002-08-16
申请人： Karl-Ernst Ehwald , Holger Rücker , Bernd Heinemann
发明人： Karl-Ernst Ehwald , Holger Rücker , Bernd Heinemann
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/0847 , H01L29/0615 , H01L29/66659 , H01L29/7835
摘要： A lateral CMOS-compatible RF-DMOS transistor (RFLDMOST) with low ‘on’ resistance, characterised in that disposed in the region of the drift space (20) which is between the highly doped drain region (5) and the control gate (9) and above the low doped drain region LDDR (22, 26) of the transistor is a doping zone (24) which is shallow in comparison with the penetration depth of the source/drain region (3, 5), of inverted conductivity type to the LDDR (22, 26) (hereinafter referred to as the inversion zone) which has a surface area-related nett doping which is lower than the nett doping of the LDDR (22, 26) and does not exceed a nett doping of 8E12 At/cm2.
摘要翻译：具有低“导通”电阻的横向CMOS兼容RF-DMOS晶体管（RFLDMOST），其特征在于，设置在位于高掺杂漏区（5）和控制栅（9）之间的漂移空间（20）的区域中）和晶体管的低掺杂漏极LDDR（22,26）之上的掺杂区是与反向导电类型的源/漏区（3,5）的穿透深度相比较浅的掺杂区（24）， LDDR（22,26）（以下称为反转区），其具有低于LDDR（22,26）的净掺杂的表面积相关的掺杂，并且不超过8E12的净掺杂 / cm2。

5. 发明申请

US20090206335A1 Bipolar complementary semiconductor device 有权
标题翻译：双极互补半导体器件
公开(公告)号：US20090206335A1
公开(公告)日：2009-08-20
申请号：US10581127
申请日：2004-12-01
申请人： Bernd Heinemann , Jürgen Drews , Steffen Marschmayer , Holger Rücker
发明人： Bernd Heinemann , Jürgen Drews , Steffen Marschmayer , Holger Rücker
IPC分类号： H01L27/082 , H01L29/04 , H01L21/8228 , H01L21/782
CPC分类号： H01L21/82285 , H01L21/8249 , H01L27/0623 , H01L27/0826
摘要： The invention relates to a BiCMOS device comprising a substrate having a first type of conductivity and a number of active regions that are provided therein and are delimited in a lateral direction by flat field-insulating regions. Vertical npn bipolar epitaxial base transistors are disposed in a first partial number of the active regions while vertical pnp bipolar epitaxial base transistors are arranged in a second partial number of the active regions of the BiCMOS device. One transistor type or both transistor types are provided with both a collector region and a collector contact region in one and the same respective active region. In order to improve the high frequency characteristics, an insulation doping region that is configured so as to electrically insulate the collector and the substrate is provided between the collector region and the substrate exclusively in a first transistor type in which the type of conductivity of the substrate corresponds to that of the collector region. In addition, the collector region of the first transistor type or both transistor types is laterally delimited by the flat field-insulating regions.
摘要翻译：本发明涉及一种BiCMOS器件，其包括具有第一类型的导电性的衬底和设置在其中的多个有源区，并且通过平坦的场绝缘区在横向方向上界定。垂直npn双极外延基极晶体管被布置在第一部分数量的有源区中，而垂直pnp双极外延基极晶体管被布置在BiCMOS器件的有效区的第二部分数目中。一个晶体管类型或两个晶体管类型在同一个相同的有源区域中设置有集电极区域和集电极接触区域。为了提高高频特性，仅在集电极区域和衬底之间设置用于使集电极和衬底电绝缘的绝缘掺杂区域仅以基板的导电性类型的第一晶体管类型提供对应于集电极区域。此外，第一晶体管类型或两种晶体管类型的集电极区域由平坦的场绝缘区域横向界定。

6. 发明授权

US07855404B2 Bipolar complementary semiconductor device 有权
标题翻译：双极互补半导体器件
公开(公告)号：US07855404B2
公开(公告)日：2010-12-21
申请号：US10581127
申请日：2004-12-01
申请人： Bernd Heinenman , Jürgen Drews , Steffen Marschmayer , Holger Rücker
发明人： Bernd Heinenman , Jürgen Drews , Steffen Marschmayer , Holger Rücker
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L21/82285 , H01L21/8249 , H01L27/0623 , H01L27/0826
摘要： A complementary BiCMOS semiconductor device comprises a substrate of a first conductivity type and a number of active regions which are provided therein and which are delimited in the lateral direction by shallow field insulation regions, in which vertical npn-bipolar transistors with an epitaxial base are arranged in a first subnumber of the active regions and vertical pnp-bipolar transistors with an epitaxial base are arranged in a second subnumber of the active regions, wherein either one transistor type or both transistor types have both a collector region and also a collector contact region in one and the same respective active region. To improve the high-frequency properties exclusively in a first transistor type in which the conductivity type of the substrate is identical to that of the collector region, an insulation doping region is provided between the collector region and the substrate.
摘要翻译：互补BiCMOS半导体器件包括第一导电类型的衬底和设置在其中的多个有源区，并且通过浅场绝缘区在横向上限定，其中布置有具有外延基底的垂直npn双极晶体管在有源区的第一子数目和具有外延基极的垂直pnp双极晶体管布置在有源区的第二子数目中，其中一个晶体管类型或两个晶体管类型都具有集电极区和集电极接触区同一个相同的活跃区域。为了提高专用于基板的导电类型与集电极区域的导电类型相同的第一晶体管类型的高频特性，在集电极区域和基板之间设置绝缘掺杂区域。

7. 发明授权

US07777255B2 Bipolar transistor with raised base connection region and process for the production thereof 有权
标题翻译：具有凸起基极连接区域的双极晶体管及其制造方法
公开(公告)号：US07777255B2
公开(公告)日：2010-08-17
申请号：US10580669
申请日：2004-12-03
申请人： Holger Rücker , Bernd Heinemann
发明人： Holger Rücker , Bernd Heinemann
IPC分类号： H01L31/072
CPC分类号： H01L29/66287 , H01L29/0649 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A bipolar transistor has a base with an epitaxial base layer and a raised base connection region which in a lateral direction in parallel relationship with the substrate surface encloses the emitter which is surrounded by a spacer of insulating material. The epitaxial base layer is raised in a heightwise direction perpendicularly to the substrate surface. An emitter of a T-shaped cross-sectional profile is separated laterally from the outer base portion by a spacer of insulating material. Its vertical bar of the T-shape adjoins with its lower end the inner base portion. The lateral extent of the spacer increases from its interface with respect to the base layer with increasing height above the base layer, wherein a first interface formed by the emitter and the spacer meets a second interface formed by the emitter and the inner base portion at a first angle which is either a right angle or an obtuse angle, and a third interface formed by the spacer and the outer base portion meets the second interface at a second obtuse angle which is larger than the first angle.
摘要翻译：双极晶体管具有基底，其具有外延基底层和凸起的基底连接区域，该基底连接区域在与衬底表面平行的方向上包围由绝缘材料的隔离物围绕的发射器。外延基层在与基板表面垂直的高度方向上升高。通过绝缘材料的间隔件将T形横截面轮廓的发射器从外部基部侧向分开。其T形的垂直杆的下端与内部基部相邻。间隔物的横向范围从其相对于基底层的界面增加，其高度高于基底层，其中由发射体和间隔物形成的第一界面与由发射体和内部基底部分形成的第二界面在第一角度是直角或钝角，并且由间隔件和外基部形成的第三界面以大于第一角度的第二钝角与第二界面相交。

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