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1. 发明授权

US08426865B2 Polycrystalline silicon thin film transistors with bridged-grain structures 有权
标题翻译：具有桥接晶粒结构的多晶硅薄膜晶体管
公开(公告)号：US08426865B2
公开(公告)日：2013-04-23
申请号：US12666220
申请日：2008-02-04
申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao
发明人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao
IPC分类号： H01L27/108
CPC分类号： H01L29/78696 , H01L27/1281 , H01L29/04 , H01L29/66757
摘要： A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced.
摘要翻译：低温多晶硅器件及其制造技术，性能优良。使用称为桥接晶粒结构（BG）的掺杂多晶硅线，本征或轻掺杂沟道被分离成多个区域。覆盖包括掺杂线的整个有源沟道的单个栅极仍然用于控制电流。使用该BG多晶硅作为有源层，并确保TFT被设计成使得电流垂直于平行的晶粒线流动，可以减小晶界效应。

2. 发明申请

US20120242918A1 Cholesteric liquid crystal structure 有权
标题翻译：胆固醇液晶结构
公开(公告)号：US20120242918A1
公开(公告)日：2012-09-27
申请号：US13428895
申请日：2012-03-23
申请人： Sergiy Valyukh , Vladimir Chigrinov , Hoi Sing Kwok , Iryna Valyukh
发明人： Sergiy Valyukh , Vladimir Chigrinov , Hoi Sing Kwok , Iryna Valyukh
IPC分类号： G02F1/1335
CPC分类号： G02F1/13718 , G02F1/19 , G02F2001/13478
摘要： A liquid crystal optical device that includes a first substrate layer that is substantially flat and a second substrate layer that is substantially flat and parallel to the first substrate layer. The liquid crystal optical device further includes a layer of cholesteric liquid crystal disposed between the first substrate layer and the second substrate layer, where the layer of cholesteric liquid crystal is arranged in domains, each domain having a helical axis, wherein the helical axes of the domains have a plurality of orientations relative to an orientation of the first and second substrate layers, and where a wavefront of a light wave having a wavelength within a range of wavelengths changes after reflecting from the layer of cholesteric liquid crystal.
摘要翻译：一种液晶光学器件，其包括基本上平坦的第一衬底层和基本上平坦且平行于第一衬底层的第二衬底层。液晶光学器件还包括设置在第一衬底层和第二衬底层之间的胆甾醇型液晶层，其中胆甾型液晶层布置在畴中，每个畴具有螺旋轴，其中，畴具有相对于第一和第二衬底层的取向的多个取向，并且其中波长在波长范围内的波长的波前在从胆甾型液晶层反射之后改变。

3. 发明申请

US20120092668A1 Patterned polarization converter 审中-公开
标题翻译：图案偏振转换器
公开(公告)号：US20120092668A1
公开(公告)日：2012-04-19
申请号：US13274127
申请日：2011-10-14
申请人： Tao Du , Vladimir Grigorievich Chigrinov , Hoi Sing Kwok
发明人： Tao Du , Vladimir Grigorievich Chigrinov , Hoi Sing Kwok
IPC分类号： G01J4/00 , G02B1/10 , G02B5/30
CPC分类号： G02F1/133788 , G02B5/3016 , G02B5/3083 , G02B5/3091 , G02B27/286 , G02F1/0136 , G02F1/1313 , G02F2001/133638
摘要： The present invention provides a patterned polarization converter having multiple domains that can be used to convert input linear polarized light to output light with spatially varying polarization states, including domains that produce linearly polarized light and domains that produce circular polarized light based on the patterning of the domains. A patterned polarization converter having multiple domains may be used in a polarization sensor application capable of detecting the polarization state of input light. The present invention further provides patterned radial and azimuthal polarization converters, which have utility in applications such as optical tweezers. Additionally, patterned polarization converters may be used to fabricate more patterned polarization converters having the same pattern using one-step photoalignment to copy the pattern of an existing patterned polarization converter to an unpatterned photoalignment layer.
摘要翻译：本发明提供一种具有多个畴的图案化偏振转换器，其可用于将输入线性偏振光转换成具有空间变化偏振状态的输出光，包括产生线性偏振光的畴和基于图案化的线性偏振光产生圆偏振光的畴域名具有多个畴的图案化偏振转换器可用于能够检测输入光的偏振状态的偏振传感器应用中。本发明还提供了图案化的径向和方位偏振转换器，其在诸如光学镊子的应用中具有实用性。此外，图案化的偏振转换器可以用于使用一步光对准来制造具有相同图案的更多图案化的偏振转换器，以将现有的图案化偏振转换器的图案复制到未图案化的光取向层。

4. 发明授权

US08013957B2 Transflective liquid crystal device and method of manufacturing the same 有权
标题翻译：半透射型液晶装置及其制造方法
公开(公告)号：US08013957B2
公开(公告)日：2011-09-06
申请号：US11915120
申请日：2005-05-21
申请人： Zhiguo Meng , Man Wong , Hoi Sing Kwok
发明人： Zhiguo Meng , Man Wong , Hoi Sing Kwok
IPC分类号： G02F1/1368 , G02F1/1343 , H01L21/70
CPC分类号： H01L29/78696 , G02F1/133555 , G02F1/1362 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1214 , H01L29/04 , H01L29/66757
摘要： The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region (108b, 108c, 108d) of the TFTs as well as the pixel-electrode (108e) are formed conjointly in a single poly-Si layer.
摘要翻译：描述了使用在可见光区域中显示吸收率低于20％的较大颗粒较低吸收（LGLA）多晶硅的液晶显示器电极的构造。显示了用于有源矩阵LCD的基板制造的集成。 TFT的源极，漏极和沟道区（108b，108c，108d）以及像素电极（108e）共同形成在单个多晶硅层中。

5. 发明申请

US20100171546A1 Polycrystalline silicon thin film transistors with bridged-grain structures 有权
标题翻译：具有桥接晶粒结构的多晶硅薄膜晶体管
公开(公告)号：US20100171546A1
公开(公告)日：2010-07-08
申请号：US12666220
申请日：2008-02-04
申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao
发明人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao
IPC分类号： G05F3/02 , H01L29/786 , H01L21/335 , H01L29/772
CPC分类号： H01L29/78696 , H01L27/1281 , H01L29/04 , H01L29/66757
摘要： A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced. Reliability, uniformity and the electrical performance of the BG poly-Si TFT are significantly improved compared with the conventional low temperature poly-Si TFT.
摘要翻译：低温多晶硅器件及其制造技术，性能优良。使用称为桥接晶粒结构（BG）的掺杂多晶硅线，本征或轻掺杂沟道被分离成多个区域。覆盖包括掺杂线的整个有源沟道的单个栅极仍然用于控制电流。使用该BG多晶硅作为有源层，并确保TFT被设计成使得电流垂直于平行的晶粒线流动，可以减小晶界效应。与传统的低温多晶硅TFT相比，BG多晶硅TFT的可靠性，均匀性和电性能显着提高。

6. 发明申请

US20080204620A1 Transflective Liquid Crystal Device and Method of Manufacturing the Same 有权
标题翻译：反射液晶装置及其制造方法
公开(公告)号：US20080204620A1
公开(公告)日：2008-08-28
申请号：US11915120
申请日：2005-05-21
申请人： Zhiguo Meng , Man Wong , Hoi Sing Kwok
发明人： Zhiguo Meng , Man Wong , Hoi Sing Kwok
IPC分类号： G02F1/1368 , H01L21/70
CPC分类号： H01L29/78696 , G02F1/133555 , G02F1/1362 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1214 , H01L29/04 , H01L29/66757
摘要： The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region (108b, 108c, 108d) of the TFTs as well as the pixel-electrode (108e) are formed conjointly in a single poly-Si layer.
摘要翻译：描述了使用在可见光区域中显示吸收率低于20％的较大颗粒较低吸收（LGLA）多晶硅的液晶显示器电极的构造。显示了用于有源矩阵LCD的基板制造的集成。 TFT的源极，漏极和沟道区域（108b，108c，108d）以及像素电极（108e）共同形成在单个多晶硅层中。

7. 发明授权

US07381600B2 Method of annealing polycrystalline silicon using solid-state laser and devices built thereon 有权
标题翻译：使用固态激光器退火多晶硅的方法和其上构建的器件
公开(公告)号：US07381600B2
公开(公告)日：2008-06-03
申请号：US11292257
申请日：2005-12-01
申请人： Man Wong , Hoi Sing Kwok , Zhiguo Meng
发明人： Man Wong , Hoi Sing Kwok , Zhiguo Meng
IPC分类号： H01L21/324 , H01L21/477
CPC分类号： H01L21/02686 , H01L21/02672 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757
摘要： The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said layer of metal to form a polycrystalline silicon layer, and irradiating the polycrystalline silicon layer with two different harmonics of a pulsed laser. The pulsed laser is preferably a solid-state laser such as a Nd-Yag laser. One harmonic is chosen such that it is preferentially absorbed by defects in the polycrystalline silicon layer, the other harmonic is absorbed by the bulk polycrystalline silicon.
摘要翻译：本发明提供一种形成多晶硅的方法，包括以下步骤：形成非晶硅层，在非晶硅层上形成金属或含金属化合物层，将非晶硅层和所述金属层退火到形成多晶硅层，并用脉冲激光的两个不同谐波照射多晶硅层。脉冲激光器优选为诸如Nd-Yag激光器的固态激光器。选择一个谐波使得其被多晶硅层中的缺陷优先吸收，另一个谐波被体多晶硅吸收。

8. 发明授权

US07236219B2 Color twisted nematic liquid crystal displays 有权
标题翻译：彩色扭曲向列型液晶显示器
公开(公告)号：US07236219B2
公开(公告)日：2007-06-26
申请号：US10722547
申请日：2003-11-28
申请人： Hoi-Sing Kwok , Xing-Jie Yu
发明人： Hoi-Sing Kwok , Xing-Jie Yu
IPC分类号： G02F1/1335 , C09K19/02
CPC分类号： G02F1/1396 , G02F2001/1398 , G02F2203/34
摘要： The present invention relates to color liquid crystal displays without the use of color filters. By carefully choosing the design parameters of a liquid crystal display, it is possible to obtain vivid colors from the display as a function of the operating voltage.
摘要翻译：本发明涉及不使用滤色器的彩色液晶显示器。通过仔细选择液晶显示器的设计参数，可以根据工作电压从显示屏获得鲜艳的色彩。

9. 发明申请

US20070139595A1 Bistable twisted nematic liquid crystal display based on dual frequency operation 有权
标题翻译：基于双频操作的双稳态扭曲向列型液晶显示器
公开(公告)号：US20070139595A1
公开(公告)日：2007-06-21
申请号：US11604072
申请日：2006-11-24
申请人： Hoi-Sing Kwok , Fion Sze Yeung , Yuet Li
发明人： Hoi-Sing Kwok , Fion Sze Yeung , Yuet Li
IPC分类号： G02F1/1337
CPC分类号： G02F1/1392 , G02F1/1337 , G02F1/1391 , G02F1/1397
摘要： The invention provides a bistable twisted nematic liquid crystal display, comprising a first substrate having thereon a first conductive layer and a first alignment layer; a second substrate having thereon a second conductive layer and a second alignment layer; a liquid crystal layer in the first and second alignment layers; an alignment layer on each of the substrates, the alignment layer imparting a preferred direction for liquid crystal molecules near the alignment layer, and possessing different azimuthal and polar anchoring energies when used to align a liquid crystal layer: the alignment layers being rubbed in such a way to give a stable twist angle of the liquid crystal of φ where φ can be any value in between −45° to +45°; and wherein the d/p ratio of the liquid crystal layer is between the values of 0.15+0.5φ/π and 0.35+0.5φ/π.
摘要翻译：本发明提供一种双稳态扭曲向列型液晶显示器，包括：第一基板，其上具有第一导电层和第一取向层; 第二基板，其上具有第二导电层和第二取向层; 第一和第二取向层中的液晶层; 在每个基板上的取向层，取向层赋予取向层附近的液晶分子的优选方向，并且当用于对准液晶层时具有不同的方位角和极化锚定能量：将取向层摩擦在这样的给出phi的液晶的稳定扭转角的方式，其中phi可以是-45°至+ 45°之间的任何值; 并且其中液晶层的d / p值在0.15 + 0.5phi / pi和0.35 + 0.5phi / pi之间。

10. 发明申请

US20060263957A1 Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom 有权
标题翻译：非晶硅的金属诱导结晶，由此制成的多晶硅薄膜和由其制造的薄膜晶体管
公开(公告)号：US20060263957A1
公开(公告)日：2006-11-23
申请号：US11413073
申请日：2006-04-27
申请人： Man Wong , Hoi-Sing Kwok , Zhiguo Meng , Dongli Zhang , Xuejie Shi
发明人： Man Wong , Hoi-Sing Kwok , Zhiguo Meng , Dongli Zhang , Xuejie Shi
IPC分类号： H01L21/84
CPC分类号： H01L27/1277 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L27/1296 , H01L29/04 , H01L29/78675
摘要： Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.
摘要翻译：将结晶诱导金属元素引入到非晶硅薄膜上。第一个低温热处理会引起金属诱导结晶（MIC）的成核，导致形成小的多晶硅“岛”。在所得部分结晶的薄膜上形成金属吸收层。第二种低温热处理完成了MIC工艺，同时从部分结晶的薄膜中吸收金属元素。该工艺产生所需的多晶硅薄膜。

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