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1. 发明申请

US20110084308A1 SEMICONDUCTOR ARRANGEMENT AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110084308A1
公开(公告)日：2011-04-14
申请号：US12672363
申请日：2007-08-08
申请人： Ter-Hoe Loh , Hoai-Son Nguyen
发明人： Ter-Hoe Loh , Hoai-Son Nguyen
IPC分类号： H01L29/165 , H01L21/20
CPC分类号： H01L27/0922 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02664 , H01L21/823807
摘要： A method for manufacturing a semiconductor arrangement is disclosed. The method comprises forming at least one trench in a dielectric layer, thereby exposing a portion of a semiconductor substrate, forming a silicon-germanium buffer layer at least on the bottom of the at least one trench, forming a germanium seed layer on the silicon-germanium buffer layer and forming a germanium layer on the germanium seed layer. A semiconductor arrangement is also disclosed. The semiconductor arrangement comprises a semiconductor substrate, a dielectric layer disposed above the semiconductor substrate, at least one trench in the dielectric layer exposing a portion of the semiconductor substrate, a silicon-germanium buffer layer disposed above at least the bottom of the at least one trench, a germanium seed layer disposed above the silicon-germanium buffer layer and a germanium layer disposed above the germanium seed layer.
摘要翻译：公开了一种制造半导体装置的方法。该方法包括在电介质层中形成至少一个沟槽，由此暴露半导体衬底的一部分，至少在至少一个沟槽的底部上形成硅 - 锗缓冲层，在硅 - 锗缓冲层，并在锗种子层上形成锗层。还公开了一种半导体装置。所述半导体装置包括半导体衬底，设置在所述半导体衬底之上的电介质层，所述电介质层中的暴露所述半导体衬底的一部分的至少一个沟槽，至少设置在所述至少一个的所述底部的硅 - 锗缓冲层沟槽，设置在硅 - 锗缓冲层上方的锗种子层和设置在锗种子层上方的锗层。

2. 发明申请

US20080135949A1 Stacked silicon-germanium nanowire structure and method of forming the same 审中-公开
标题翻译：堆叠硅 - 锗纳米线结构及其形成方法
公开(公告)号：US20080135949A1
公开(公告)日：2008-06-12
申请号：US11636381
申请日：2006-12-08
申请人： Guo Qiang Lo , Lakshmi Kanta Bera , Hoai Son Nguyen , Navab Singh
发明人： Guo Qiang Lo , Lakshmi Kanta Bera , Hoai Son Nguyen , Navab Singh
IPC分类号： H01L29/94
CPC分类号： H01L29/78696 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/42392
摘要： A method of forming a stacked silicon-germanium nanowire structure on a support substrate is disclosed. The method includes forming a stacked structure on the support substrate, the stacked structure comprising at least one channel layer and at least one interchannel layer deposited on the channel layer; forming a fin structure from the stacked structure, the fin structure comprising at least two supporting portions and a fin portion arranged there between; oxidizing the fin portion of the fin structure thereby forming the silicon-germanium nanowire being surrounded by a layer of oxide; and removing the layer of oxide to form the silicon-germanium nanowire. A method of forming a gate-all-around transistor comprising forming a stacked silicon-germanium nanowire structure that has been formed on a support substrate is also disclosed. A stacked silicon-germanium nanowire structure and a gate-all-around transistor comprising the stacked silicon-germanium nanowire structure are also disclosed.
摘要翻译：公开了一种在支撑衬底上形成堆叠的硅 - 锗纳米线结构的方法。该方法包括在支撑基板上形成堆叠结构，该堆叠结构包括至少一个沟道层和沉积在沟道层上的至少一个沟道间层; 从所述堆叠结构形成翅片结构，所述翅片结构包括至少两个支撑部分和布置在其间的翅片部分; 氧化翅片结构的翅片部分，从而形成被一层氧化物包围的硅 - 锗纳米线; 并除去氧化物层以形成硅 - 锗纳米线。还公开了一种形成栅极全绕晶体管的方法，包括形成已经形成在支撑衬底上的堆叠的硅 - 锗纳米线结构。还公开了堆叠的硅 - 锗纳米线结构和包括堆叠的硅 - 锗纳米线结构的栅极全绕晶体管。

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