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1. 发明申请

US20060024971A1 Dry etching method using polymer mask selectively formed by CO gas 审中-公开
标题翻译：使用由CO气体选择性形成的聚合物掩模的干蚀刻方法
公开(公告)号：US20060024971A1
公开(公告)日：2006-02-02
申请号：US11193199
申请日：2005-07-29
申请人： Wan-Jae Park , Ho-Sen Chang , Young-Mook Oh
发明人： Wan-Jae Park , Ho-Sen Chang , Young-Mook Oh
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/76802 , H01L21/0273 , H01L21/3081 , H01L21/3085 , H01L21/31144 , H01L21/32139 , H01L2221/1057
摘要： A dry etching method comprises placing a semiconductor substrate in a reactor, the semiconductor substrate comprising a photoresist pattern formed on an etching target layer, supplying carbon monoxide gas into the reactor to selectively deposit polymer on the photoresist pattern to form a polymer layer, and etching the etching target layer using the photoresist pattern and the polymer layer as an etch mask.
摘要翻译：干蚀刻方法包括将半导体衬底放置在反应器中，所述半导体衬底包括形成在蚀刻靶层上的光致抗蚀剂图案，将一氧化碳气体供应到反应器中，以选择性地将聚合物沉积在光致抗蚀剂图案上以形成聚合物层，并且蚀刻使用光致抗蚀剂图案的蚀刻目标层和作为蚀刻掩模的聚合物层。

2. 发明授权

US06699749B1 Method for manufacturing a metal-insulator-metal capacitor 失效
标题翻译：金属 - 绝缘体 - 金属电容器的制造方法
公开(公告)号：US06699749B1
公开(公告)日：2004-03-02
申请号：US10429321
申请日：2003-05-05
申请人： Seung-Gun Lee , Il-Goo Kim , Ho-Sen Chang , Ju-Hyuk Chang , Sang-Rok Hah
发明人： Seung-Gun Lee , Il-Goo Kim , Ho-Sen Chang , Ju-Hyuk Chang , Sang-Rok Hah
IPC分类号： H01L218242
CPC分类号： H01L21/02071 , H01L21/32136 , H01L28/60
摘要： A method of manufacturing a MIM capacitor having a bottom electrode is provided by forming a metal wire including copper on a substrate. After the metal wire is formed on the substrate, a dielectric film is formed on the metal wire. A top electrode film is formed on the dielectric film, and then the top electrode film is etched to form a top electrode. A hard metallic polymer formed during the etching of the top electrode film is removed using a mixture of an oxygen gas and a fluorocarbon based gas. The lifting of the thin films is effectively prevented, and the yield of the manufacturing process for manufacturing a MIM capacitor is increased. Additionally, the MIM capacitor has a uniform capacitance because the damage to the dielectric film is prevented, and the oxidation of the bottom electrode is also prevented.
摘要翻译：通过在基板上形成包含铜的金属线来提供制造具有底部电极的MIM电容器的方法。在基板上形成金属线之后，在金属线上形成电介质膜。在电介质膜上形成顶部电极膜，然后蚀刻顶部电极膜以形成顶部电极。使用氧气和碳氟化合物气体的混合物除去在顶部电极膜的蚀刻期间形成的硬质金属聚合物。有效地防止薄膜的提升，并且制造MIM电容器的制造工艺的成品率提高。此外，MIM电容器具有均匀的电容，因为防止对电介质膜的损坏，并且还防止了底部电极的氧化。

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