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1. 发明申请

US20160211378A1 SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件，其制造方法以及包括半导体器件的存储器系统
公开(公告)号：US20160211378A1
公开(公告)日：2016-07-21
申请号：US15083251
申请日：2016-03-28
申请人： Kook-Tae KIM , Young-Tak KIM , Ho-Sung SON , Seok-Jun WON , Ji-Hye YI , Chul-Woong LEE
发明人： Kook-Tae KIM , Young-Tak KIM , Ho-Sung SON , Seok-Jun WON , Ji-Hye YI , Chul-Woong LEE
IPC分类号： H01L29/78 , H01L29/49 , H01L29/51 , H01L29/417
CPC分类号： H01L29/7851 , H01L29/41783 , H01L29/4966 , H01L29/4983 , H01L29/518 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/7848 , H01L29/785
摘要： Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
摘要翻译：提供半导体装置及其制造方法以及包括半导体装置的电子装置。半导体器件包括形成在衬底上并包括沟槽的层间绝缘层，形成在沟槽中的栅电极，形成在栅电极的侧壁上以形成L形的第一栅极间隔件，形成在第二栅极间隔所述第一栅极间隔物具有L形并且具有低于氮化硅的介电常数的介电常数，以及形成在所述第二栅极间隔物上的第三间隔物。

2. 发明授权

US07190012B2 Photodiode and method of manufacturing the same 有权
标题翻译：光电二极管及其制造方法
公开(公告)号：US07190012B2
公开(公告)日：2007-03-13
申请号：US11002832
申请日：2004-12-02
申请人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
发明人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L31/105 , H01L31/02168 , Y02E10/50
摘要： A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.
摘要翻译：提供光电二极管和制造光电二极管的方法。该方法包括在半导体衬底上形成包括光接收单元和电极单元的二极管结结构，在接合结构上形成缓冲氧化物层和蚀刻阻挡层，形成层间绝缘层和金属间绝缘层和互连通过蚀刻金属间绝缘层和层间绝缘层来暴露蚀刻阻挡层，通过干法蚀刻去除蚀刻阻挡层的一部分和光接收单元的缓冲氧化物层，并且暴露光的半导体表面接收单元通过湿蚀刻。

3. 发明授权

US07662084B2 Blood pump actuator and a blood pump system thereof 有权
标题翻译：血液泵致动器及其血液泵系统
公开(公告)号：US07662084B2
公开(公告)日：2010-02-16
申请号：US10568090
申请日：2005-10-20
申请人： Kyung Sun , Kyu Back Lee , Yong Doo Park , Ho Sung Son , Chang Mo Hwang , Gi Seok Jeong
发明人： Kyung Sun , Kyu Back Lee , Yong Doo Park , Ho Sung Son , Chang Mo Hwang , Gi Seok Jeong
IPC分类号： A61M1/10
CPC分类号： A61M1/1046 , A61M1/1037 , A61M1/1048 , A61M1/1051 , A61M1/106 , A61M1/122 , F04B9/047 , F04B43/09
摘要： A blood pump actuator to generate a driving force for driving a blood pump is disclosed. The blood pump actuator includes: a motor unit having a stator and a rotor, and rotating to generate a rotating force; a cam unit to convert the rotating motion of the motor unit into a rectilinear reciprocating motion; and a bellows unit having a bellows, which is expandable and contractible and contains a fluid therein, and an upper bellows plate and a lower bellows plate respectively attached to the upper and lower ends of the bellows, wherein the lower bellows plate moves upwards and downwards in a vertical direction according to the rectilinear reciprocating motion of the cam unit engaging with the lower bellows plate, and the bellows repeatedly expands and contracts according to the vertical movement of the lower bellows plate.
摘要翻译：公开了一种用于产生用于驱动血液泵的驱动力的血液泵致动器。血泵致动器包括：电动机单元，具有定子和转子，并且旋转以产生旋转力; 用于将马达单元的旋转运动转换为直线往复运动的凸轮单元; 以及具有可膨胀和收缩并且包含流体的波纹管的波纹管单元，以及分别附接到波纹管的上端和下端的上波纹管板和下波纹管板，其中下波纹管板上下移动根据与下波纹板接合的凸轮单元的直线往复运动而沿垂直方向，并且波纹管根据下波纹管板的垂直运动而反复膨胀和收缩。

4. 发明申请

US20080161637A1 Blood Pump Actuator And A Blood Pump System Thereof 有权
标题翻译：血泵执行机构及其血液泵系统
公开(公告)号：US20080161637A1
公开(公告)日：2008-07-03
申请号：US10568090
申请日：2005-10-20
申请人： Kyung Sun , Kyu Back Lee , Yong Doo Park , Ho Sung Son , Chang Mo Hwang , Gi Seok Jeong
发明人： Kyung Sun , Kyu Back Lee , Yong Doo Park , Ho Sung Son , Chang Mo Hwang , Gi Seok Jeong
IPC分类号： A61M1/10
CPC分类号： A61M1/1046 , A61M1/1037 , A61M1/1048 , A61M1/1051 , A61M1/106 , A61M1/122 , F04B9/047 , F04B43/09
摘要： A blood pump actuator to generate a driving force for driving a blood pump is disclosed. The blood pump actuator includes: a motor unit having a stator and a rotor, and rotating to generate a rotating force; a cam unit to convert the rotating motion of the motor unit into a rectilinear reciprocating motion; and a bellows unit having a bellows, which is expandable and contractible and contains a fluid therein, and an upper bellows plate and a lower bellows plate respectively attached to the upper and lower ends of the bellows, wherein the lower bellows plate moves upwards and downwards in a vertical direction according to the rectilinear reciprocating motion of the cam unit engaging with the lower bellows plate, and the bellows repeatedly expands and contracts according to the vertical movement of the lower bellows plate.
摘要翻译：公开了一种用于产生用于驱动血液泵的驱动力的血液泵致动器。血泵致动器包括：电动机单元，具有定子和转子，并且旋转以产生旋转力; 用于将马达单元的旋转运动转换为直线往复运动的凸轮单元; 以及具有可膨胀和收缩并且包含流体的波纹管的波纹管单元，以及分别附接到波纹管的上端和下端的上波纹管板和下波纹管板，其中下波纹管板上下移动根据与下波纹板接合的凸轮单元的直线往复运动而沿垂直方向，并且波纹管根据下波纹管板的垂直运动而反复膨胀和收缩。

5. 发明申请

US20070243656A1 PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：光电及其制造方法
公开(公告)号：US20070243656A1
公开(公告)日：2007-10-18
申请号：US11670457
申请日：2007-02-02
申请人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
发明人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
IPC分类号： H01L31/18
CPC分类号： H01L31/105 , H01L31/02168 , Y02E10/50
摘要： A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.
摘要翻译：提供光电二极管和制造光电二极管的方法。该方法包括在半导体衬底上形成包括光接收单元和电极单元的二极管结结构，在接合结构上形成缓冲氧化物层和蚀刻阻挡层，形成层间绝缘层和金属间绝缘层和互连通过蚀刻金属间绝缘层和层间绝缘层来暴露蚀刻阻挡层，通过干法蚀刻去除蚀刻阻挡层的一部分和光接收单元的缓冲氧化物层，并且暴露光的半导体表面接收单元通过湿蚀刻。

6. 发明申请

US20060172751A1 Method for synchronizing use information of mobile communication terminal and system implementing the same 审中-公开
标题翻译：用于同步移动通信终端的使用信息的方法及其实现的系统
公开(公告)号：US20060172751A1
公开(公告)日：2006-08-03
申请号：US11232865
申请日：2005-09-23
申请人： Ho-Sung Son , Ki-Cheon Han
发明人： Ho-Sung Son , Ki-Cheon Han
IPC分类号： H04B7/005
CPC分类号： H04M1/7253 , H04M2250/02
摘要： A method for synchronizing use Information of a mobile communication terminal and a system are provided. In system and method, for synchronizing use information between a first mobile communication terminal and a second mobile communication terminal including short-range wireless communication units includes requesting connection for use information synchronization to the second mobile communication terminal by the first mobile communication terminal, if a response signal to the connection request is received from the second mobile communication terminal, transmitting use information of the first mobile communication terminal to the second mobile communication terminal, and updating by the second mobile communication terminal use information of the second mobile communication terminal using the transmitted use information of the first mobile communication terminal.
摘要翻译：提供一种用于同步使用移动通信终端和系统的方法。在系统和方法中，为了在包括短距离无线通信单元的第一移动通信终端和第二移动通信终端之间同步使用信息，包括由第一移动通信终端请求与第二移动通信终端的使用信息同步的连接，如果从第二移动通信终端接收到对连接请求的响应信号，向第二移动通信终端发送第一移动通信终端的使用信息，并且由第二移动通信终端更新使用所发送的第二移动通信终端的第二移动通信终端的使用信息使用第一移动通信终端的信息。

7. 发明申请

US20050133838A1 Photodiode and method of manufacturing the same 有权
标题翻译：光电二极管及其制造方法
公开(公告)号：US20050133838A1
公开(公告)日：2005-06-23
申请号：US11002832
申请日：2004-12-02
申请人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
发明人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
IPC分类号： H01L31/10 , H01L31/0216 , H01L31/0232 , H01L31/105
CPC分类号： H01L31/105 , H01L31/02168 , Y02E10/50
摘要： A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.
摘要翻译：提供光电二极管和制造光电二极管的方法。该方法包括在半导体衬底上形成包括光接收单元和电极单元的二极管结结构，在接合结构上形成缓冲氧化物层和蚀刻阻挡层，形成层间绝缘层和金属间绝缘层和互连通过蚀刻金属间绝缘层和层间绝缘层来暴露蚀刻阻挡层，通过干法蚀刻去除蚀刻阻挡层的一部分和光接收单元的缓冲氧化物层，并且暴露光的半导体表面接收单元通过湿蚀刻。

8. 发明授权

US07476598B2 Photodiode and method of manufacturing the same 失效
标题翻译：光电二极管及其制造方法
公开(公告)号：US07476598B2
公开(公告)日：2009-01-13
申请号：US11670457
申请日：2007-02-02
申请人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
发明人： Ho-Sung Son , Sung-Ryoul Bae , Dong-Kyun Nam
IPC分类号： H01L21/20
CPC分类号： H01L31/105 , H01L31/02168 , Y02E10/50
摘要： A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.
摘要翻译：提供光电二极管和制造光电二极管的方法。该方法包括在半导体衬底上形成包括光接收单元和电极单元的二极管结结构，在接合结构上形成缓冲氧化物层和蚀刻阻挡层，形成层间绝缘层和金属间绝缘层和互连通过蚀刻金属间绝缘层和层间绝缘层来暴露蚀刻阻挡层，通过干法蚀刻去除蚀刻阻挡层的一部分和光接收单元的缓冲氧化物层，并且暴露光的半导体表面接收单元通过湿蚀刻。

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