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1. 发明申请

US20130092962A1 LIGHT EMITTING DEVICE (LED), MANUFACTURING METHOD THEREOF, AND LED MODULE USING THE SAME 审中-公开
标题翻译：发光装置（LED）及其制造方法及其使用的LED模块
公开(公告)号：US20130092962A1
公开(公告)日：2013-04-18
申请号：US13655100
申请日：2012-10-18
申请人： Ho Sun Paek , Hak Hwan Kim , Ill Heung Choi , Kyung Mi Moon
发明人： Ho Sun Paek , Hak Hwan Kim , Ill Heung Choi , Kyung Mi Moon
IPC分类号： H01L33/08 , H01L33/62
CPC分类号： H01L33/62 , H01L33/44 , H01L2224/16225
摘要： A light emitting device (LED), a manufacturing method thereof, and an LED module using the same. The LED may include a first semiconductor layer, an active layer, and a second semiconductor layer formed sequentially on a light-transmitting substrate, a first electrode formed in a region exposed by removing a part of the first semiconductor layer, a second electrode formed on the second semiconductor layer, a passivation layer formed on the first electrode and the second electrode to expose a region of the first electrode and a region of the second electrode, a first bump formed in a first region including the first electrode exposed through the passivation layer, and extended to another region of the second electrode on which the passivation layer is formed, and a second bump formed in a second region including the second electrode exposed through the passivation layer.
摘要翻译：发光装置（LED）及其制造方法以及使用其的LED模块。 LED可以包括在透光性基板上依次形成的第一半导体层，有源层和第二半导体层，形成在通过去除第一半导体层的一部分而露出的区域中的第一电极，形成在所述第二半导体层，形成在所述第一电极和所述第二电极上以钝化所述第一电极的区域和所述第二电极的区域的钝化层，形成在包括通过所述钝化层暴露的所述第一电极的第一区域中的第一凸起并且延伸到其上形成有钝化层的第二电极的另一区域，以及形成在包括通过钝化层暴露的第二电极的第二区域中的第二凸块。

2. 发明授权

US08084778B2 Light emitting diode package 失效
标题翻译：发光二极管封装
公开(公告)号：US08084778B2
公开(公告)日：2011-12-27
申请号：US12571751
申请日：2009-10-01
申请人： Ho Sun Paek , Hak Hwan Kim , Young Jin Lee , Hyung Kun Kim , Suk Ho Jung
发明人： Ho Sun Paek , Hak Hwan Kim , Young Jin Lee , Hyung Kun Kim , Suk Ho Jung
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L2224/48091 , H01L2224/48247 , H01L2924/1815 , H01L2924/00014
摘要： There is provided an LED package having high heat dissipation efficiency. An LED package according to an aspect of the invention may include: a package body including a first groove portion being recessed into the package body and provided as a mounting area on the top of the package body; first and second lead frames arranged on a lower surface of the first groove portion while parts of the first and second lead frames are exposed; an LED chip mounted onto the lower surface of the first groove portion and electrically connected to the first and second lead frames; and a plurality of heat dissipation patterns provided on the bottom of the package body and formed of carbon nanotubes.
摘要翻译：提供了具有高散热效率的LED封装。根据本发明的一个方面的LED封装可以包括：封装主体，包括凹入到封装体中的第一凹槽部分，并且作为安装区域设置在封装主体的顶部; 第一引线框架和第二引线框架布置在第一槽部分的下表面上，同时第一和第二引线框架的一部分被暴露; LED芯片安装在第一槽部分的下表面上并电连接到第一和第二引线框架; 以及设置在包装体的底部并由碳纳米管形成的多个散热图案。

3. 发明授权

US07759140B2 Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07759140B2
公开(公告)日：2010-07-20
申请号：US11450389
申请日：2006-06-12
申请人： Jeong-wook Lee , Youn-joon Sung , Jae-hee Cho , Ho-sun Paek
发明人： Jeong-wook Lee , Youn-joon Sung , Jae-hee Cho , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01L33/12 , H01L33/22
摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.
摘要翻译：提供了一种发光器件及其制造方法。发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可获得一致的缺陷密度和均匀的应力分布完成此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

4. 发明申请

US20100081221A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING TEXTURED STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有纹理结构的半导体发光器件及其制造方法
公开(公告)号：US20100081221A1
公开(公告)日：2010-04-01
申请号：US12630880
申请日：2009-12-04
申请人： Jeong-wook LEE , Youn-joon Sung , Ho-sun Paek
发明人： Jeong-wook LEE , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/007 , H01L33/025 , H01L33/20 , H01L33/22
摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
摘要翻译：提供具有纹理结构的半导体发光二极管及其制造方法。半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层第一半导体层和中间层。

5. 发明申请

US20090200565A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于GaN的半导体发光器件
公开(公告)号：US20090200565A1
公开(公告)日：2009-08-13
申请号：US12251872
申请日：2008-10-15
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

6. 发明申请

US20090134410A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090134410A1
公开(公告)日：2009-05-28
申请号：US12275536
申请日：2008-11-21
申请人： Ho Sun Paek , Sung Nam Lee , Tan Sakong , Youn Joon Sung , In Hoe Hur
发明人： Ho Sun Paek , Sung Nam Lee , Tan Sakong , Youn Joon Sung , In Hoe Hur
IPC分类号： H01L33/00 , H01L21/363
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/12 , H01L33/16
摘要： There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法。根据本发明的一个方面的制造氮化物半导体发光器件的方法可以包括：氮化m面蓝宝石衬底的表面; 在m面蓝宝石衬底上形成高温缓冲层; 在高温缓冲层上沉积半极（11-22）面氮化物薄膜; 以及在所述半极性（11-22）面氮化物薄膜上形成包括第一氮化物半导体层，有源层和第二氮化物半导体层的发光结构。

7. 发明申请

US20080095492A1 Semiconductor optoelectronic device and method of fabricating the same 有权
标题翻译：半导体光电器件及其制造方法
公开(公告)号：US20080095492A1
公开(公告)日：2008-04-24
申请号：US11878495
申请日：2007-07-25
申请人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： G02B6/12
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/0014 , H01S5/2004 , H01S5/2009 , H01S5/321 , H01S5/3213 , H01S5/3403 , H01S5/3406 , H01S5/34333
摘要： Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.
摘要翻译：提供了一种半导体光电器件，其可以包括分别包括量子阱和在衬底上的势垒层，有源层上和下面的上波导层和下层波导层的有源层，以及位于有源层之上和之下的上和下包层上下波导层。半导体光电器件还可以包括在有源层和上波导层之间的上部光限制层（OCL），并且具有小于上波导层的能隙的能隙，并且等于或大于能隙以及有源层和下波导层之间的下部OCL，并且具有小于下部波导层的能隙的能隙，并且等于或小于势垒层的能隙。还提供了一种制造半导体光电器件的方法。

8. 发明申请

US20080012002A1 Nitride-based semiconductor light emitting device and methods of manufacturing the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20080012002A1
公开(公告)日：2008-01-17
申请号：US11812435
申请日：2007-06-19
申请人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
发明人： Tan Sakong , Joong-kon Son , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/32
摘要： A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0≦y≦0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of InzGa(1-z)N (0.25≦z≦0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of InyGa(1-y)N (0≦y≦0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on the second diffusion barrier layer. The nitride-based semiconductor light emitting device may include an n-type semiconductor layer, the active layer, and a p-type semiconductor layer that are sequentially stacked on a substrate.
摘要翻译：提供具有能够提高光输出性能的结构的氮化物系半导体发光元件及其制造方法。有源层可以包括在n型半导体层上由In x Ga（1-x）N（0.01 <= x <= 0.05）形成的第一势垒层，在第一阻挡层上由In（x）y（1-y）N（0 <= y <0.01））形成的第一扩散阻挡层，并掺杂有包括N（氮）元素和Si（硅）元素中的至少一种元素的抗缺陷剂，由In（z）（1-z）形成的量子阱层在第一扩散阻挡层上的N（0.25 <= z <= 0.35），由In Y y（1-y）N（0）表示的第二扩散阻挡层并且掺杂有包含N元素和Si元素中的至少一种的抗缺陷剂，以及由In元素和Si元素形成的第二势垒层，在第二扩散阻挡层上的Ga（1-x）N（0.01 <= x <= 0.05）。氮化物系半导体发光元件可以包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。

9. 发明申请

US20060280215A1 Ridge-waveguide semiconductor laser diode 有权
公开(公告)号：US20060280215A1
公开(公告)日：2006-12-14
申请号：US11505871
申请日：2006-08-18
申请人： Joong-kon Son , Tae-hoon Jang , Youn-loon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Tae-hoon Jang , Youn-loon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00 , H01S3/097
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3216 , H01S5/34333
摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.

10. 发明申请

US20060237709A1 GaN-based compound semiconductor device 审中-公开
标题翻译： GaN系化合物半导体装置
公开(公告)号：US20060237709A1
公开(公告)日：2006-10-26
申请号：US11285169
申请日：2005-11-23
申请人： Sung-nam Lee , Ho-sun Paek , Joong-kon Son , Tan Sakong
发明人： Sung-nam Lee , Ho-sun Paek , Joong-kon Son , Tan Sakong
IPC分类号： H01L29/06 , H01L29/12
CPC分类号： H01L29/2003 , B82Y20/00 , H01L29/045 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0211 , H01S5/2231 , H01S5/34333
摘要： A gallium nitride (GaN)-based compound semiconductor device having a structure improving a surface characteristic of a thin film growing on a substrate is provided. The GaN-based compound semiconductor device includes an AlxInyGa1-x-yN substrate (0≦x≦1, 0≦y≦1, and 0≦x+y≦1) whose surface inclines toward a predetermined direction at an off-angle of greater than 0° and less than 1° with respect to the (0001) plane, and a GaN-based compound semiconductor layer grown on the surface of the substrate.
摘要翻译：提供了具有提高在基板上生长的薄膜的表面特性的结构的基于氮化镓（GaN）的化合物半导体器件。 GaN基化合物半导体器件包括Al衬底（0≤x≤1,0）相对于（0001）面，其表面朝向预定方向倾斜大于0°且小于1°的角度<= y <= 1和0 <= x + y <= 1），以及在基板的表面上生长的GaN基化合物半导体层。

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