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1. 发明授权

US08648324B2 Glassy carbon nanostructures 有权
标题翻译：玻璃碳纳米结构
公开(公告)号：US08648324B2
公开(公告)日：2014-02-11
申请号：US12727710
申请日：2010-03-19
申请人： Ho-Cheol Kim , Sang-Min Park
发明人： Ho-Cheol Kim , Sang-Min Park
IPC分类号： H01L29/02
CPC分类号： B82Y40/00 , B82Y30/00 , H01G11/26 , H01G11/36 , H01G11/46 , H01M4/625 , H01M10/0525 , Y02E60/13
摘要： Glassy carbon nanostructures are disclosed that can be used as electrode materials in batteries and electrochemical capacitors, or as photoelectrodes in photocatalysis and photoelectrochemistry devices. In some embodiments channels (e.g., substantially cylindrically-shaped pores) are formed in a glassy carbon substrate, whereas in other embodiments, ridges are formed that extend along and over a glassy carbon substrate. In either case, a semiconductor and/or metal oxide may be deposited over the glassy carbon to form a composite material.
摘要翻译：公开了可用作电池和电化学电容器中的电极材料的玻璃碳纳米结构，或用作光催化和光电化学装置中的光电极。在一些实施例中，在玻璃碳基板中形成通道（例如，基本上为圆柱形的孔），而在其它实施例中，形成沿着玻璃碳基板延伸的脊。在任一情况下，半导体和/或金属氧化物可以沉积在玻璃碳上以形成复合材料。

2. 发明申请

US20120308476A1 METHODS OF FORMING METAL OXIDE NANOSTRUCTURES, AND NANOSTRUCTURES THEREOF 有权
标题翻译：形成金属氧化物纳米结构的方法及其纳米结构
公开(公告)号：US20120308476A1
公开(公告)日：2012-12-06
申请号：US13571791
申请日：2012-08-10
申请人： Ho-Cheol Kim , Robert D. Miller , Oun Ho Park
发明人： Ho-Cheol Kim , Robert D. Miller , Oun Ho Park
IPC分类号： C01G23/047
CPC分类号： C01G23/047 , C01B13/18 , C01B13/185 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2006/16
摘要： A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure.
摘要翻译：形成金属氧化物纳米结构的方法包括将螯合的低聚金属氧化物前体置于溶剂可溶的模板上以形成包含可变形的螯合低聚金属氧化物前体层的第一结构; 设置可变形螯合低聚金属氧化物前体层以形成包含固定金属氧化物前体层的第二结构; 用溶剂溶解溶剂可溶性模板以形成包含固定金属氧化物前体层的第三结构; 并对第三结构进行热处理以形成金属氧化物纳米结构。

3. 发明授权

US08323868B2 Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof 有权
标题翻译：双层体系包括聚二甲基戊二酰亚胺基底层及其组合物
公开(公告)号：US08323868B2
公开(公告)日：2012-12-04
申请号：US12613800
申请日：2009-11-06
申请人： Joy Cheng , Ho-Cheol Kim , Hiroshi Ito , Atsuko Ito, legal representative , Hoa D. Truong
发明人： Joy Cheng , Ho-Cheol Kim , Hiroshi Ito , Hoa D. Truong
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028 , G03F7/11
CPC分类号： G03F7/091 , G03F7/0392 , G03F7/095
摘要： Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.
摘要翻译：双层体系包括由聚二甲基戊二酰亚胺形成的底层，酸不稳定溶解抑制剂和光酸产生剂。双层系统可以在单一的曝光和开发过程中暴露和发展。

4. 发明授权

US08207028B2 Two-dimensional patterning employing self-assembled material 有权
标题翻译：采用自组装材料的二维图案
公开(公告)号：US08207028B2
公开(公告)日：2012-06-26
申请号：US12017598
申请日：2008-01-22
申请人： Timothy J. Dalton , Bruce B. Doris , Ho-Cheol Kim , Carl Radens
发明人： Timothy J. Dalton , Bruce B. Doris , Ho-Cheol Kim , Carl Radens
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y30/00 , H01L21/0338 , Y10T428/24612
摘要： A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the first layer containing the first nanoscale nested line structure. A second nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running in a second direction is formed from second self-assembling block copolymers within the second layer. The composite pattern of the first nanoscale nested line structure and the second nanoscale nested line structure is transferred into an underlayer beneath the first layer to form an array of structures containing periodicity in two directions.
摘要翻译：具有亚光刻宽度和亚光刻距离并沿着第一方向延伸的第一纳米级自对准自组装嵌套线结构由第一层内的第一自组装嵌段共聚物形成。第一层填充有填充材料，并且第二层沉积在包含第一纳米级嵌套线结构的第一层之上。具有亚光刻宽度和亚光刻距离并沿第二方向运行的第二纳米级自对准自组装嵌套线结构由第二层内的第二自组装嵌段共聚物形成。第一纳米级嵌套线结构和第二纳米级嵌套线结构的复合图案被转移到第一层下面的底层中以形成在两个方向上包含周期性的结构阵列。

5. 发明授权

US07989026B2 Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films 有权
标题翻译：使用含环氧基的脂环族丙烯酸聚合物作为嵌段共聚物薄膜的取向控制层的方法
公开(公告)号：US07989026B2
公开(公告)日：2011-08-02
申请号：US12013444
申请日：2008-01-12
申请人： Joy Cheng , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda Sundberg
发明人： Joy Cheng , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda Sundberg
IPC分类号： B05D5/00
CPC分类号： B05D5/00 , B05D7/14 , B05D7/52 , C08L53/00 , C09D125/14 , C09D153/00
摘要： Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.
摘要翻译：本文公开了一种控制嵌段共聚物膜中微相分离的区域的取向的方法，包括在基材的表面上形成包含含环氧基的脂环族丙烯酸聚合物的取向控制层，照射和/或加热该基材以交联取向控制层，并且在与衬底相对的取向控制层的表面上形成包含形成微相分离结构域的嵌段共聚物的嵌段共聚物组合层。取向控制层可以选择性地交联以暴露衬底的区域，或者可以将取向控制层图案化而不去除该层，以在取向控制层上提供选择性图案化。在另外的实施方案中，公开了双层和三层成像方案。

6. 发明授权

US07820242B2 Low-K interlevel dielectric materials and method of forming low-K interlevel dielectric layers and structures 有权
标题翻译：低K层间电介质材料和低K层间介电层和结构的形成方法
公开(公告)号：US07820242B2
公开(公告)日：2010-10-26
申请号：US12053721
申请日：2008-03-24
申请人： Geraud Jean-Michel Dubois , James Lupton Hedrick , Ho-Cheol Kim , Victor Yee-Way Lee , Teddie Peregrino Magbitang , Robert Dennis Miller , Muthumanickam Sankarapandian , Linda Karin Sundberg , Willi Volksen
发明人： Geraud Jean-Michel Dubois , James Lupton Hedrick , Ho-Cheol Kim , Victor Yee-Way Lee , Teddie Peregrino Magbitang , Robert Dennis Miller , Muthumanickam Sankarapandian , Linda Karin Sundberg , Willi Volksen
IPC分类号： B05D3/02
CPC分类号： C08L101/12 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/76807 , H01L21/7682 , H01L2221/1047
摘要： A composition of matter and a structure fabricated using the composition. The composition comprising: a resin; polymeric nano-particles dispersed in the resin, each of the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscible with the resin; and a solvent, the solvent volatile at a first temperature, the resin cross-linkable at a second temperature, the polymeric nano-particle decomposable at a third temperature, the third temperature higher than the second temperature, the second temperature higher than the first temperature, wherein a thickness of a layer of the composition shrinks by less than about 3.5% between heating the layer from the second temperature to the third temperature.
摘要翻译：使用该组合物制造的物质组成和结构。所述组合物包含：树脂; 分散在树脂中的聚合物纳米颗粒，每个聚合纳米颗粒包含多臂芯聚合物和连接到多臂芯聚合物的悬置聚合物，与树脂不混溶的多臂芯聚合物和可混溶的侧链聚合物与树脂; 和溶剂，所述溶剂在第一温度下挥发，所述树脂在第二温度下可交联，所述聚合物纳米颗粒在第三温度下可分解，所述第三温度高于所述第二温度，所述第二温度高于所述第一温度，其中在从第二温度到第三温度的层之间加热组合物的层的厚度收缩小于约3.5％。

7. 发明授权

US07651735B2 Orienting, positioning, and forming nanoscale structures 有权
标题翻译：定位，定位和形成纳米结构
公开(公告)号：US07651735B2
公开(公告)日：2010-01-26
申请号：US12061777
申请日：2008-04-03
申请人： Joy Cheng , Ho-Cheol Kim , Robert D. Miller
发明人： Joy Cheng , Ho-Cheol Kim , Robert D. Miller
IPC分类号： B05D5/00
CPC分类号： B29D22/00 , B33Y10/00 , B33Y80/00 , B81C1/00031 , B81C2201/0149 , B82Y30/00 , C08L53/00 , G03F7/0002 , Y10S977/70 , Y10S977/701 , Y10S977/712 , Y10S977/788 , Y10S977/932 , Y10T428/1393 , Y10T428/24132 , Y10T428/249921 , C08L2666/02 , C08L2666/24
摘要： Methods and a structure. A first film of a first block copolymer is formed inside a trough integrally disposed on an energetically neutral surface layer of a substrate. Line-forming microdomains are assembled of the first block copolymer, and form first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. At least one microdomain is removed from the first film such that oriented structures remain in the trough oriented normal to the sidewalls and parallel to the surface layer. A second film of a second block copolymer is formed inside the trough. Line-forming microdomains are assembled of the second block copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. A second method and a structure are also provided.
摘要翻译：方法和结构。第一嵌段共聚物的第一膜形成在整体设置在基材的能量中性表面层上的槽内。线形成微区域由第一嵌段共聚物组装，并且在垂直于侧壁并平行于表面层的第一膜内形成第一自组装结构。至少一个微区域从第一膜移除，使得定向结构保持在垂直于侧壁并平行于表面层的槽中。在槽内形成第二嵌段共聚物的第二膜。线形成微区域由第二嵌段共聚物组装，并且在第二膜中形成第二自组装结构，其定向垂直于取向结构并平行于侧壁。还提供了第二种方法和结构。

8. 发明申请

US20090182093A1 Method of Controlling Orientation of Domains in Block Copolymer Films 失效
公开(公告)号：US20090182093A1
公开(公告)日：2009-07-16
申请号：US12013138
申请日：2008-01-11
申请人： Joy Cheng , Ho-Cheol Kim , Daniel P. Sanders , Linda Sundberg
发明人： Joy Cheng , Ho-Cheol Kim , Daniel P. Sanders , Linda Sundberg
IPC分类号： C08L53/00
CPC分类号： C08L63/00 , B05D5/02 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C08F283/10 , C08L53/00 , C09D125/14 , G03F7/0002 , G03F7/038 , Y10S264/901 , Y10S428/91 , Y10T428/24942
摘要： A method of orienting microphase-separated domains is disclosed, comprising applying a composition comprising an orientation control component, and a block copolymer assembly component comprising a block copolymer having at least two microphase-separated domains in which the orientation control component is substantially immiscible with the block copolymer assembly component upon forming a film; and forming a compositionally vertically segregated film on the surface of the substrate from the composition. The orientation control component and block copolymer segregate during film forming to form the compositionally vertically-segregated film on the surface of a substrate, where the orientation control component is enriched adjacent to the surface of the compositionally segregated film adjacent to the surface of the substrate, and the block copolymer assembly is enriched at an air-surface interface.

9. 发明申请

US20090179002A1 METHOD OF FORMING POLYMER FEATURES BY DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS 有权
标题翻译：通过方向自组装块状共聚物形成聚合物特征的方法
公开(公告)号：US20090179002A1
公开(公告)日：2009-07-16
申请号：US12061693
申请日：2008-04-03
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders
发明人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders
IPC分类号： B05D5/00 , C23F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Disclosed are methods of forming polymer structures comprising: applying a solution of a block copolymer assembly comprising at least one block copolymer to a neutral substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and have a first spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains of the block copolymer that form by lateral segregation of the blocks in accordance with the underlying chemical pattern, wherein at least one domain of the block copolymer assembly has an affinity for the pinning regions, wherein a structure extending across the chemical pattern is produced, the structure having a uniform second spatial frequency given by the number of repeating sets of domains along the given direction that is at least twice that of the first spatial frequency.
摘要翻译：公开了形成聚合物结构的方法，包括：将包含至少一种嵌段共聚物的嵌段共聚物组合物溶液施加到其上具有化学图案的中性衬底上，所述化学图案包括化学上不同的交替的钉扎和中性区域，并且具有第一空间频率由衬底上沿着给定方向的成套组钉扎和中性区域的数量给出; 以及通过根据下面的化学图案横向分离块而形成嵌段共聚物的结构域，其中嵌段共聚物组合物的至少一个结构域对于钉扎区域具有亲和力，其中横跨化学图案延伸的结构是所述结构具有由给定方向上的至少是第一空间频率的两倍的畴的重复集合的数量给出的统一的第二空间频率。

10. 发明申请

US20090107950A1 FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS 有权
标题翻译：使用自组装面膜形成表面特征
公开(公告)号：US20090107950A1
公开(公告)日：2009-04-30
申请号：US11926722
申请日：2007-10-29
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： H01B13/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译：一种用于产生表面特征的方法和蚀刻掩模方法。提供了一种嵌段共聚物和另外的材料的组合。嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。附加材料与第一聚合物混溶。膜由直接形成在第一层的表面上。附加材料的纳米结构在第一聚合物嵌段内自组装。蚀刻组合和第一层的膜。纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。去除膜并且特征保留在第一层的表面上。还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

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