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1. 发明专利

JP2007267607A Of food baking machine 有权
标题翻译：食品烘烤机
公开(公告)号：JP2007267607A
公开(公告)日：2007-10-18
申请号：JP2006093730
申请日：2006-03-30
申请人：勝義 ▲吉▼田 , 尚昭 ▲吉▼田 , Hisaaki Yoshida , Katsuyoshi Yoshida
发明人： YOSHIDA KATSUYOSHI , YOSHIDA HISAAKI
IPC分类号： A23G3/02 , A21B5/00 , A23G3/50
摘要： PROBLEM TO BE SOLVED: To provide a baking machine ensuring a space interval (clearance) between a baking upper mold and a baking lower mold corresponding to the thickness of food in finish, when baked. SOLUTION: The baking machine for food is provided with a lower baking mold 12 to which food material is charged, and an upper baking mold 4 pressing the food material, and used as follows: closing the upper baking mold 4 on the lower baking mold 12; pressurizing the food material by the upper baking mold 4; and baking the food material. The lower baking mold 12 and the upper baking mold 4 are connected to each other via expanding/contracting stretch members 8, 18 when closing the molds. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种烘焙机，其确保烘焙时与烘烤完成时的食物厚度相对应的烘烤上模和烘烤下模之间的间隔间隔（间隙）。＆lt; P＆gt;解决方案：用于食品的烘焙机设置有下料烘焙模具12，食物材料被加入到该烘焙模具12中，并且上面的烘烤模具4挤压食品材料，并且使用如下：在下部烘烤模具4上关闭烘烤模具12; 通过上部烘烤模具4对食物加压; 并烘烤食物。下部烘烤模具12和上部烘烤模具4在关闭模具时通过伸缩部件8,18彼此连接。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2009131207A Rice cracker dough feeder 有权
标题翻译：大米破碎机DOUGH FEEDER
公开(公告)号：JP2009131207A
公开(公告)日：2009-06-18
申请号：JP2007310534
申请日：2007-11-30
申请人：勝義 ▲吉▼田 , 尚昭 ▲吉▼田 , Hisaaki Yoshida , Katsuyoshi Yoshida
发明人： YOSHIDA KATSUYOSHI , YOSHIDA HISAAKI
IPC分类号： A21C11/16 , A21C11/10
摘要： PROBLEM TO BE SOLVED: To provide a rice cracker dough feeder which prevents rice cracker dough prior to baking from drooping from the rice cracker dough feeder, feeds rice cracker dough that has a higher water content than those of the conventional types and is liable to droop, to a rice cracker baker, and prevents change in quality which is caused by heating of rice cracker dough in a nozzle by the heat of the rice cracker baker.
SOLUTION: The rice cracker dough feeder 10 which feeds rice cracker dough 60 to the rice cracker baker 50, is equipped with the nozzles 13 for supplying the rice cracker dough 60, a cutting wire 33 for cutting the rice cracker dough 60 supplied from the nozzles 13, and a lid 30 for the nozzles 13, and associates the cutting wire 33 with the lid 30. When the lid 30 opens outlets 13a of the nozzles 13, the rice cracker dough 60 is supplied from the nozzles 13. After the rice cracker dough 60 supplied from the outlets 13a of the nozzles 13, is cut by the wire 33 at the outlets 13a of the nozzles 13, the lid 30 closes the outlets 13a of the nozzles 13.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种米饼干面团供料器，其在烘焙之前防止米饼干面团从米饼干面团喂料器下垂，给出具有比常规类型更高含水量的米饼干面团，并且是容易下垂到米饼干面包师，并且防止由米饼干面包师的热量加热喷嘴中的米饼干面团导致的质量变化。解决方案：将米饼干生面团60供给米饼干面包机50的米饼干面团供料器10配备有用于供应米饼干面团60的喷嘴13，用于切割提供的米饼干面团60的切割线33 从喷嘴13和用于喷嘴13的盖30，将切割线33与盖30相关联。当盖30打开喷嘴13的出口13a时，从喷嘴13供给米饼干生面团60。从喷嘴13的出口13a供给的米粒面60由喷嘴13的出口13a处的金属线33切断，盖30封闭喷嘴13的出口13a。（C） 2009年，JPO＆INPIT

3. 发明专利

JP2009131208A Dough feeder 有权
标题翻译： DOUGH FEEDER
公开(公告)号：JP2009131208A
公开(公告)日：2009-06-18
申请号：JP2007310535
申请日：2007-11-30
申请人：勝義 ▲吉▼田 , 尚昭 ▲吉▼田 , Hisaaki Yoshida , Katsuyoshi Yoshida
发明人： YOSHIDA KATSUYOSHI , YOSHIDA HISAAKI
IPC分类号： A21C11/20
摘要： PROBLEM TO BE SOLVED: To provide a dough feeder with which the user of the dough feeder easily removes and cleans extruder screws. SOLUTION: The dough feeder 10 is equipped with: a dough feed hopper 14 detachably attached to the upper part of the dough feeder; a dough-sending part 16 positioned below the dough feed hopper 14; fixing holes 36 that are arranged protrusively behind the dough sending part 16 and detachably attaches the extruder screws 20 for sending dough to the dough sending part 16; the extruder screws 20 equipped with gears 28 exposed backward from the fixing holes 36, in a state in which the gears are inserted from the fixing holes 36 into the dough-sending part 16 and attached to the fixing holes 36; a power transmission gear 40 for supplying power to rotate the gears 28 of the extruder screws 20; and a clutch (not shown) that relatively separates the power transmission gear 40 from the gears 28 of the extruder screws 20 and controls the engagement and disengagement of both the gears. The fixing holes 36 are equipped with fixing means that fixes the extruder screws 20. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供面团供料器，面团供料器的使用者容易地去除和清洁挤出机螺杆。面团供料器10配备有：面团供料斗14，其可拆卸地连接到面团供料器的上部; 定位在面团进料斗14的下方的送面部16; 固定孔36，其突出地布置在生面团发送部16的后面，并将用于发送面团的挤出机螺杆20可拆卸地附接到面团发送部16; 在齿轮从固定孔36插入面团送入部16并附着于固定孔36的状态下，配备有从固定孔36向后露出的齿轮28的挤出机螺杆20; 用于提供动力以旋转挤出机螺杆20的齿轮28的动力传动齿轮40; 以及离合器（未示出），其将动力传动齿轮40与挤出机螺杆20的齿轮28相对分离并且控制两个齿轮的接合和分离。固定孔36配备有固定装置，固定装置固定挤出机螺杆20.版权所有：（C）2009，JPO＆INPIT

4. 发明授权

US5440165A Semiconductor device with means for suppressing electric fields 失效
标题翻译：具有抑制电场的装置的半导体装置
公开(公告)号：US5440165A
公开(公告)日：1995-08-08
申请号：US302482
申请日：1994-09-12
申请人： Kazumasa Mitsunaga , Kaoru Motonami , Hisaaki Yoshida
发明人： Kazumasa Mitsunaga , Kaoru Motonami , Hisaaki Yoshida
IPC分类号： H01L21/265 , H01L21/336 , H01L21/74 , H01L21/76 , H01L21/762 , H01L29/10 , H01L29/78 , H01L29/772 , H01L31/068
CPC分类号： H01L21/762 , H01L21/74 , H01L21/76 , H01L21/76216 , H01L29/1083 , H01L29/6659
摘要： An element separating oxide film is formed in a surface of a p-type silicon substrate for separation of an element forming region. A p-type impurity diffusion region extends from the vicinity of a lower surface of the element separating oxide film to a position at a predetermined depth in the element forming region. The p-type impurity diffusion region has a peak of concentration of impurity. In the element forming region adjacent to the element separating oxide film, an n.sup.+ impurity diffusion region is formed on the surface of the p-type silicon substrate. An n.sup.- impurity diffusion region adjacent to the n.sup.+ impurity diffusion region is formed between the n.sup.+ impurity diffusion region and the p-type impurity diffusion region.
摘要翻译：在用于分离元件形成区域的p型硅衬底的表面中形成元件分离氧化膜。 p型杂质扩散区从元件隔离氧化膜的下表面附近延伸到元件形成区域中预定深度的位置。 p型杂质扩散区域具有杂质浓度的峰值。在与元件分离氧化膜相邻的元件形成区域中，在p型硅衬底的表面上形成n +杂质扩散区域。在n +杂质扩散区和p型杂质扩散区之间形成与n +杂质扩散区相邻的n-杂质扩散区。

5. 发明申请

US20120153382A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120153382A1
公开(公告)日：2012-06-21
申请号：US13205085
申请日：2011-08-08
申请人： Atsushi NARAZAKI , Hisaaki YOSHIDA , Kazuaki HIGASHI
发明人： Atsushi NARAZAKI , Hisaaki YOSHIDA , Kazuaki HIGASHI
IPC分类号： H01L29/78 , B82Y99/00
CPC分类号： H01L29/7813 , H01L29/4236 , H01L29/4238 , H01L29/7811
摘要： A semiconductor device includes a trench extending from a surface of a P-base layer to a surface of a P-well layer. The trench has a trench end portion defined in the surface of the P-well layer and in a direction in which the trench extends. The trench has first and second regions. The first region extends from the trench end portion to get into the surface of the P-base layer near a boundary between the P-base layer and the P-well layer. The second region extends in the surface of the P-base layer from an end portion of the first region. A trench width is greater in the first region than in the second region.
摘要翻译：半导体器件包括从P基层的表面延伸到P阱层的表面的沟槽。沟槽具有限定在P阱层的表面中并且在沟槽延伸的方向上的沟槽端部。沟渠有第一和第二区域。第一区域从沟槽末端部延伸到P基层与P阱层之间的边界附近的P基层的表面。第二区域从第一区域的端部在P基层的表面延伸。沟道宽度在第一区域比在第二区域中大。

6. 发明授权

US08530966B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08530966B2
公开(公告)日：2013-09-10
申请号：US13205085
申请日：2011-08-08
申请人： Atsushi Narazaki , Hisaaki Yoshida , Kazuaki Higashi
发明人： Atsushi Narazaki , Hisaaki Yoshida , Kazuaki Higashi
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/4236 , H01L29/4238 , H01L29/7811
摘要： A semiconductor device includes a trench extending from a surface of a P-base layer to a surface of a P-well layer. The trench has a trench end portion defined in the surface of the P-well layer and in a direction in which the trench extends. The trench has first and second regions. The first region extends from the trench end portion to get into the surface of the P-base layer near a boundary between the P-base layer and the P-well layer. The second region extends in the surface of the P-base layer from an end portion of the first region. A trench width is greater in the first region than in the second region.
摘要翻译：半导体器件包括从P基层的表面延伸到P阱层的表面的沟槽。沟槽具有限定在P阱层的表面中并且在沟槽延伸的方向上的沟槽端部。沟渠有第一和第二区域。第一区域从沟槽末端部延伸到P基层与P阱层之间的边界附近的P基层的表面。第二区域从第一区域的端部在P基层的表面延伸。沟道宽度在第一区域比在第二区域中大。

7. 发明授权

US5635413A Method of manufacturing field effect transistor 失效
标题翻译：制造场效应晶体管的方法
公开(公告)号：US5635413A
公开(公告)日：1997-06-03
申请号：US437743
申请日：1995-05-08
申请人： Kazumasa Mitsunaga , Kaoru Motonami , Hisaaki Yoshida
发明人： Kazumasa Mitsunaga , Kaoru Motonami , Hisaaki Yoshida
IPC分类号： H01L21/265 , H01L21/336 , H01L21/74 , H01L21/76 , H01L21/762 , H01L29/10 , H01L29/78 , H01L21/8234
CPC分类号： H01L21/762 , H01L21/74 , H01L21/76 , H01L21/76216 , H01L29/1083 , H01L29/6659
摘要： An element separating oxide film is formed in a surface of a p-type silicon substrate for separation of an element forming region. A p-type impurity diffusion region extends from the vicinity of a lower surface of the element separating oxide film to a position at a predetermined depth in the element forming region. The p-type impurity diffusion region has a peak of concentration of impurity. In the element forming region adjacent to the element separating oxide film, an n.sup.+ impurity diffusion region is formed on the surface of the p-type silicon substrate. An n.sup.- impurity diffusion region adjacent to the n.sup.+ impurity diffusion region is formed between the n.sup.+ impurity diffusion region and the p-type impurity diffusion region.
摘要翻译：在用于分离元件形成区域的p型硅衬底的表面中形成元件分离氧化膜。 p型杂质扩散区从元件隔离氧化膜的下表面附近延伸到元件形成区域中预定深度的位置。 p型杂质扩散区域具有杂质浓度的峰值。在与元件分离氧化膜相邻的元件形成区域中，在p型硅衬底的表面上形成n +杂质扩散区域。在n +杂质扩散区和p型杂质扩散区之间形成与n +杂质扩散区相邻的n-杂质扩散区。

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