会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20120281469A1
    • 2012-11-08
    • US13459537
    • 2012-04-30
    • Hiroyuki TOMATSUHidetomo KOBAYASHIYutaka SHIONOIRI
    • Hiroyuki TOMATSUHidetomo KOBAYASHIYutaka SHIONOIRI
    • G11C11/40H01L27/108
    • H01L27/1156G11C7/02G11C11/4085G11C11/4091G11C11/4094
    • Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor.
    • 在字线上产生的噪声减小,而不增加字线上的负载。 提供一种半导体器件,其中包括至少一个开关元件的多个存储元件设置为矩阵; 多个存储元件中的每一个电连接到字线和位线; 字线连接到其中少数载体基本不存在的晶体管的栅极(或源极和漏极); 并且通过控制其中不存在少数载流子的晶体管的源极和漏极(或栅极)的电位,可以控制其中不存在少数载流子的晶体管的电容。 少数载流子不存在的晶体管可以包括宽带隙半导体。
    • 5. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08941958B2
    • 2015-01-27
    • US13448496
    • 2012-04-17
    • Hiroyuki Tomatsu
    • Hiroyuki Tomatsu
    • H02H3/22H01L27/02H01L27/06
    • H01L27/0266H01L27/0688
    • To provide a protection circuit having a small area, redundancy, and small leak current. In the protection circuit, a plurality of nonlinear elements is provided so as to overlap with each other and so as to be electrically connected in series. At least one nonlinear element in the protection circuit is a diode-connected transistor including an oxide semiconductor in its channel formation region. The other nonlinear element is a diode-connected transistor including silicon in its channel formation region or a diode including silicon in its junction region.
    • 提供具有小面积,冗余性和小泄漏电流的保护电路。 在保护电路中,多个非线性元件被设置为彼此重叠并且串联电连接。 保护电路中的至少一个非线性元件是在其沟道形成区域中包括氧化物半导体的二极管连接的晶体管。 另一非线性元件是在其沟道形成区域中包括硅的二极管连接的晶体管或在其结区域中包括硅的二极管。