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    • 2. 发明申请
    • LENS ACTUATOR
    • 镜头执行器
    • US20120314307A1
    • 2012-12-13
    • US13486187
    • 2012-06-01
    • KIMIYA IKUSHIMAHIDEKAZU TANAKAHIROYUKI TOGAWANORIFUMI SATATAKUO OSAKITAKATOSHI ONO
    • KIMIYA IKUSHIMAHIDEKAZU TANAKAHIROYUKI TOGAWANORIFUMI SATATAKUO OSAKITAKATOSHI ONO
    • G02B7/02
    • G02B27/646G02B7/08
    • A lens actuator includes a carrier that is configured to retain a lens; a first AF coil that is disposed in the carrier while wound about an axis perpendicular to a lens retaining surface; first to fourth magnets that are disposed opposite the first AF coil in four directions parallel to the lens retaining surface; a first OIS coil that is disposed opposite the first magnet; and a second OIS coil that is disposed opposite the second magnet. A current is passed through the first AF coil to move the carrier in a vertical direction along an axis. The currents are passed through the first and second OIS coils to a movable unit in front-back and left-right directions. Therefore, weight reduction of the movable unit can be achieved to provide a lens actuator, in which electric power saving can be achieved.
    • 透镜致动器包括被配置为保持透镜的载体; 第一AF线圈,其围绕垂直于透镜保持面的轴线设置在所述载体中; 第一至第四磁体,其在与所述透镜保持面平行的四个方向上与所述第一AF线圈相对设置; 与第一磁体相对设置的第一OIS线圈; 以及与第二磁体相对设置的第二OIS线圈。 电流通过第一AF线圈沿着轴线在垂直方向上移动载体。 电流在前后左右方向通过第一和第二OIS线圈到可移动单元。 因此,可以实现可动单元的重量减轻,以提供能够实现节电的透镜致动器。
    • 4. 发明授权
    • Semiconductor light emitting diode and method of producing the same
    • 半导体发光二极管及其制造方法
    • US08809894B2
    • 2014-08-19
    • US13148816
    • 2010-02-08
    • Masayuki NakanoHiroyuki TogawaHidetaka Yamada
    • Masayuki NakanoHiroyuki TogawaHidetaka Yamada
    • H01L33/38H01L33/30H01L33/46H01L33/40H01L33/00
    • H01L33/387H01L33/0079H01L33/405H01L33/46
    • A semiconductor light emitting diode including: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, where: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed in such a positional relationship that these electrode portions are in parallel with and offset from each other and a distance between the upper electrode portion and the intermediate electrode portion is within the range of 10 μm to 50 μm.
    • 一种半导体发光二极管,包括:支撑基板; 依次设置在支撑基板的上表面侧的中间电极部,第二导电半导体层,有源层,第一导电半导体层和上电极部分的中间层; 以及设置在所述支撑基板的下表面侧的下电极层,其中:所述中间层具有线性地延伸或呈岛状的至少一个中间电极部, 并且上电极部分和中间电极部分以这些电极部分彼此平行和偏移的位置关系设置,并且上部电极部分和中间电极部分之间的距离在10μm的范围内 至50μm。
    • 5. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME
    • 半导体发光二极管及其制造方法
    • US20120007116A1
    • 2012-01-12
    • US13148816
    • 2010-02-08
    • Masayuki NakanoHiroyuki TogawaHidetaka Yamada
    • Masayuki NakanoHiroyuki TogawaHidetaka Yamada
    • H01L33/60
    • H01L33/387H01L33/0079H01L33/405H01L33/46
    • A semiconductor light emitting diode including: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, where: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed in such a positional relationship that these electrode portions are in parallel with and offset from each other and a distance between the upper electrode portion and the intermediate electrode portion is within the range of 10 μm to 50 μm.
    • 一种半导体发光二极管,包括:支撑基板; 依次设置在支撑基板的上表面侧的中间电极部,第二导电半导体层,有源层,第一导电半导体层和上电极部分的中间层; 以及设置在所述支撑基板的下表面侧的下电极层,其中:所述中间层具有线性地延伸或呈岛状的至少一个中间电极部, 并且上电极部分和中间电极部分以这些电极部分彼此平行和偏移的位置关系设置,并且上部电极部分和中间电极部分之间的距离在10μm的范围内 至50μm。
    • 6. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME
    • 半导体发光二极管及其制造方法
    • US20110316030A1
    • 2011-12-29
    • US13148777
    • 2010-02-08
    • Hiroyuki TogawaMasayuki NakanoHidetaka Yamada
    • Hiroyuki TogawaMasayuki NakanoHidetaka Yamada
    • H01L33/60
    • H01L33/387H01L33/0079H01L33/382H01L33/62
    • A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.
    • 一种半导体发光二极管,包括:支撑衬底; 依次设置在支撑基板的上表面侧的中间电极部,第二导电半导体层,有源层,第一导电半导体层和上电极部分的中间层; 以及设置在所述支撑基板的下表面侧的下电极层,其中:所述中间层具有直线状或岛状形状的至少一个中间电极部, 并且上电极部分和中间电极部分分别以这些电极部分的位置关系设置在通过将这些电极部分投影在与支撑基板的上表面平行的假想平面上的视图中 彼此偏移。
    • 8. 发明授权
    • Lens actuator
    • 镜头执行器
    • US08670195B2
    • 2014-03-11
    • US13486187
    • 2012-06-01
    • Kimiya IkushimaHidekazu TanakaHiroyuki TogawaNorifumi SataTakuo OsakiTakatoshi Ono
    • Kimiya IkushimaHidekazu TanakaHiroyuki TogawaNorifumi SataTakuo OsakiTakatoshi Ono
    • G02B7/02G11B3/00
    • G02B27/646G02B7/08
    • A lens actuator includes a carrier that is configured to retain a lens; a first AF coil that is disposed in the carrier while wound about an axis perpendicular to a lens retaining surface; first to fourth magnets that are disposed opposite the first AF coil in four directions parallel to the lens retaining surface; a first OIS coil that is disposed opposite the first magnet; and a second OIS coil that is disposed opposite the second magnet. A current is passed through the first AF coil to move the carrier in a vertical direction along an axis. The currents are passed through the first and second OIS coils to a movable unit in front-back and left-right directions. Therefore, weight reduction of the movable unit can be achieved to provide a lens actuator, in which electric power saving can be achieved.
    • 透镜致动器包括被配置为保持透镜的载体; 第一AF线圈,其围绕垂直于透镜保持面的轴线设置在所述载体中; 第一至第四磁体,其在与所述透镜保持面平行的四个方向上与所述第一AF线圈相对设置; 与第一磁体相对设置的第一OIS线圈; 以及与第二磁体相对设置的第二OIS线圈。 电流通过第一AF线圈沿着轴线在垂直方向上移动载体。 电流在前后左右方向通过第一和第二OIS线圈到可移动单元。 因此,可以实现可动单元的重量减轻,以提供能够实现节电的透镜致动器。
    • 10. 发明授权
    • Semiconductor light emitting diode and method of producing the same
    • 半导体发光二极管及其制造方法
    • US09287458B2
    • 2016-03-15
    • US13148777
    • 2010-02-08
    • Hiroyuki TogawaMasayuki NakanoHidetaka Yamada
    • Hiroyuki TogawaMasayuki NakanoHidetaka Yamada
    • H01L33/38H01L33/62H01L33/00
    • H01L33/387H01L33/0079H01L33/382H01L33/62
    • A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.
    • 一种半导体发光二极管,包括:支撑衬底; 依次设置在支撑基板的上表面侧的中间电极部,第二导电半导体层,有源层,第一导电半导体层和上电极部分的中间层; 以及设置在所述支撑基板的下表面侧的下电极层,其中:所述中间层具有直线状或岛状形状的至少一个中间电极部, 并且上电极部分和中间电极部分分别以这些电极部分的位置关系设置在通过将这些电极部分投影在与支撑基板的上表面平行的假想平面上的视图中 彼此偏移。