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    • 1. 发明授权
    • High voltage device system of railcar and railcar
    • 轨道车和轨道车高压装置系统
    • US09225075B2
    • 2015-12-29
    • US13979036
    • 2011-11-15
    • Hiroyuki KawasakiHiroyuki SakuraiRyoji NegiShin ImanishiNobuyuki Sema
    • Hiroyuki KawasakiHiroyuki SakuraiRyoji NegiShin ImanishiNobuyuki Sema
    • H01R4/00H02G15/08B61G5/10B60L5/24
    • H01R4/00B60L5/24B60L2200/26B61G5/10H02G15/08
    • The present invention is a high voltage device system mounted on a railcar and includes a plurality of high voltage devices to which high-voltage electric power from an overhead contact line is supplied, a plurality of high-voltage cables configured to connect the high voltage devices with each other, and a joint device to which the high-voltage cables are connected. The high-voltage cables respectively include cable connector portions at tip end portions thereof, and each of the cable connector portions includes a base tubular portion configured to cover the high-voltage cable and a fit tubular portion extending from the base tubular portion in a direction substantially perpendicular to a longitudinal direction of the high-voltage cable. The joint device includes joint connector portions, each of which is fitted to the fit tubular portion of the cable connector portion to be connected to the high-voltage cable.
    • 本发明是一种安装在有轨电车上的高压装置系统,包括多个高压装置,从架空接触线路供给高压电力的多个高压装置,多个高压电缆,其构成为将高压装置 彼此连接,以及连接高压电缆的联合装置。 高压电缆分别在前端部分具有电缆连接器部分,并且每个电缆连接器部分包括构造成覆盖高压电缆的基本管状部分和从基部管状部分沿方向延伸的配合管状部分 基本上垂直于高压电缆的纵向方向。 接头装置包括接头连接器部分,每个连接器部分装配到要连接到高压电缆的电缆连接器部分的配合管状部分。
    • 3. 发明申请
    • Display Device and Driving Method of Display Device
    • 显示装置的显示装置和驱动方法
    • US20080284695A1
    • 2008-11-20
    • US11569294
    • 2005-05-10
    • Masakazu KatoHiroyuki SakuraiKohichi Ohmura
    • Masakazu KatoHiroyuki SakuraiKohichi Ohmura
    • G09G3/36
    • G09G3/3614G09G3/3674G09G2320/0209G09G2320/0233
    • A IF inversion driving method writes signal voltage of the same polarity to a signal line over a 1F period, and therefore cannot prevent occurrence of crosstalk caused by coupling. Also, shading is caused. In an active matrix type liquid crystal display device including a pixel array unit 11 formed by two-dimensionally arranging pixels 20 in a form of a matrix, the pixel array unit 11 is divided into a plurality of areas (two areas 11A and 11B in a present example) in a vertical direction, while the plurality of areas being vertically scanned in order (alternately in the present example) in a unit of a row, pixels of the plurality of areas are selected in a unit of a row, and a video signal Vsig reversed in polarity in each H is written to the pixels of the selected row.
    • IF反相驱动方法在1F周期内向信号线写入相同极性的信号电压,因此不能防止由耦合引起的串扰的发生。 另外,造成阴影。 在包括由矩阵二维排列像素20形成的像素阵列单元11的有源矩阵型液晶显示装置中,像素阵列单元11被分成多个区域(两个区域11A和11B 在本实施例中)沿着垂直方向,在多个区域以行为单位依次垂直扫描(在本例中为交替的方式)的情况下,以行为单位选择多个区域的像素,并且 将每个H中的极性反转的视频信号Vsig写入所选行的像素。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    • 半导体器件及其制造方法
    • US20130341640A1
    • 2013-12-26
    • US13728029
    • 2012-12-27
    • Hiroyuki Sakurai
    • Hiroyuki Sakurai
    • H01L29/40
    • H01L29/402H01L21/28587H01L29/2003H01L29/401H01L29/42316H01L29/475H01L29/7786
    • According to an embodiment, a semiconductor device includes a semiconductor, a source electrode, a drain electrode, an insulating layer and a gate electrode. The semiconductor layer includes an GaN layer and a AlGaN layer provided on the GaN layer. The source electrode and the drain electrode are provided on the semiconductor layer. The insulating layer is provided on the semiconductor layer between the source electrode and the drain electrode. The gate electrode includes a penetrating portion and a gate field plate, the penetrating portion being in contact with the semiconductor layer through the insulating layer and containing platinum in contact with the semiconductor layer, the gate field plate being in contact with an upper face of the insulating layer with a contact length of not less than 0.1 micrometers and not more than 0.3 micrometers and containing platinum in contact with the upper surface.
    • 根据实施例,半导体器件包括半导体,源电极,漏电极,绝缘层和栅电极。 半导体层包括设置在GaN层上的GaN层和AlGaN层。 源电极和漏电极设置在半导体层上。 绝缘层设置在源电极和漏电极之间的半导体层上。 栅电极包括穿透部分和栅极场板,穿透部分通过绝缘层与半导体层接触并且包含与半导体层接触的铂,栅极场板与上述的半导体层的上表面接触 绝缘层,其接触长度不小于0.1微米且不大于0.3微米,并且含有与上表面接触的铂。