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    • 7. 发明授权
    • Alpha alumina for the production of sapphire single crystal and method for producing the same
    • 用于制造蓝宝石单晶的α-氧化铝及其制造方法
    • US08388929B2
    • 2013-03-05
    • US13041833
    • 2011-03-07
    • Hirotaka OzakiShinji Fujiwara
    • Hirotaka OzakiShinji Fujiwara
    • C01F7/00
    • C30B29/20C30B9/00C30B11/00Y10T428/2982
    • An object of the present invention is to provide α alumina for the production of a sapphire single crystal, capable of producing a sapphire single crystal with high production efficiency; and a method for producing the same.Disclosed are α alumina for the production of a sapphire single crystal, including 100 parts by weight of α alumina (I) and 25 to 235 parts by weight of α alumina (II), wherein the α alumina (I) has a specific surface area of 0.1 to 5 m2/g and a bulk density of 1.5 g/cm3 or more, the α alumina (II) is composed of sintered particles and also has a specific surface area of 1 m2/g or less and a relative density of 85% or more, and each of the body particles has a volume of 0.01 cm3 or more; and a method for producing the same.
    • 本发明的目的是提供一种用于制造蓝宝石单晶的α氧化铝,能够以高的生产效率生产蓝宝石单晶; 及其制造方法。 公开了用于生产蓝宝石单晶的α氧化铝,包括100重量份的α氧化铝(I)和25至235重量份的α氧化铝(II),其中α氧化铝(I)具有比表面积 为0.1〜5m 2 / g,堆积密度为1.5g / cm 3以上,α氧化铝(II)由烧结体构成,比表面积为1m 2 / g以下,相对密度为85 %以上,体积粒子的体积为0.01cm 3以上, 及其制造方法。