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1. 发明授权

US06553277B1 Method and apparatus for vacuum treatment 有权
标题翻译：真空处理方法和装置
公开(公告)号：US06553277B1
公开(公告)日：2003-04-22
申请号：US09959764
申请日：2001-11-06
申请人： Shoji Yagisawa , Hiromitsu Kanbara , Hiroshi Nishikawa , Takashi Ito
发明人： Shoji Yagisawa , Hiromitsu Kanbara , Hiroshi Nishikawa , Takashi Ito
IPC分类号： H05H100
CPC分类号： H01L21/67253 , H01J37/32935 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method of vacuum treatment is performed using a vacuum treatment system (1) comprising a vacuum treatment unit (31) for treating a wafer (W) placed on a wafer stage (10) and a controller (51) for controlling the vacuum treatment unit (31). A sensor wafer (11) of substantially the same shape and size as a wafer (W), which includes a detector element (11d) for detecting data about the state of a vacuum treatment and a data processing element (11p) for processing the detected data, is placed on the wafer stage (10) and treated in a vacuum by the vacuum treatment unit (31). While the sensor wafer (11) is subjected to a vacuum treatment, data on the state of the vacuum treatment is detected and processed. Based on the processed data, the controller (51) controls the vacuum treatment unit (31) to treat the wafer (W).
摘要翻译：使用真空处理系统（1）进行真空处理的方法，真空处理系统（1）包括用于处理放置在晶片台（10）上的晶片（W）的真空处理单元（31）和用于控制真空处理单元（31）。一种与晶片（W）基本相同形状和尺寸的传感器晶片（11），其包括用于检测关于真空处理状态的数据的检测器元件（11d）和用于处理检测到的数据处理元件（11p）数据放置在晶片台（10）上，并通过真空处理单元（31）在真空中进行处理。在对传感器晶片（11）进行真空处理的同时，检测并处理真空处理状态的数据。基于处理数据，控制器（51）控制真空处理单元（31）来处理晶片（W）。

2. 发明授权

US5556500A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US5556500A
公开(公告)日：1996-09-17
申请号：US398667
申请日：1995-03-03
申请人： Makoto Hasegawa , Hiromi Sakima , Hiromitsu Kanbara , Yoshio Ishikawa , Yasuo Imamura , Makoto Aoki
发明人： Makoto Hasegawa , Hiromi Sakima , Hiromitsu Kanbara , Yoshio Ishikawa , Yasuo Imamura , Makoto Aoki
IPC分类号： H01L21/302 , C23F4/00 , H01J37/32 , H01L21/3065 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32623 , H01J37/32642 , H01L21/6833 , H01J2237/2001 , Y10S156/915
摘要： An apparatus for etching a WSi film on a wafer by using a plasma of a gas containing a halogen element includes a vacuum process chamber in which upper and lower counter electrodes are provided. An electrostatic chuck is provided on a table at the center of a susceptor or the lower electrode. The wafer is held on the electrostatic chuck. A focus ring surrounding the wafer in a complementary manner is placed on a flange of the susceptor. The temperature of the wafer surface is set to be lower than that of the surface of the focus ring while the plasma is being generated. The focus ring comprises an inner part of amorphous carbon and an outer part of tungsten. While the plasma is being generated, a halide of tungsten generated from the outer part is diffused on the wafer surface, thereby correcting a distribution of the amount of the halide of tungsten on the wafer surface. Thus, the uniformity within the wafer surface of the etching rate and etching anisotropy is enhanced.
摘要翻译：通过使用包含卤素元素的气体的等离子体在晶片上蚀刻WSi膜的装置包括设置有上下对置电极的真空处理室。在基座或下电极的中心的台上设置静电卡盘。晶片保持在静电卡盘上。以互补方式围绕晶片的聚焦环放置在基座的凸缘上。当产生等离子体时，晶片表面的温度被设定为低于聚焦环表面的温度。聚焦环包括无定形碳的内部和钨的外部。当产生等离子体时，从外部产生的钨卤化物在晶片表面上扩散，由此校正晶片表面上钨的卤化物的量的分布。因此，提高了晶片表面的蚀刻速度和蚀刻各向异性的均匀性。

3. 发明授权

US5785877A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5785877A
公开(公告)日：1998-07-28
申请号：US799083
申请日：1997-02-11
申请人： Masaaki Sato , Yoshinobu Arita , Masahiro Ogasawara , Hidenori Satoh , Hiromitsu Kanbara
发明人： Masaaki Sato , Yoshinobu Arita , Masahiro Ogasawara , Hidenori Satoh , Hiromitsu Kanbara
IPC分类号： C23F1/12 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： C23F4/00 , Y10S438/909
摘要： An object to be etched is loaded in a low-pressure vapor phase processing chamber, and then an etching gas obtained by adding a small amount of additive gas of oxygen or additive gas at least containing oxygen to a reaction gas used for etching is fed to the low-pressure vapor phase processing chamber so as to suppress a reaction between the wall of the low-pressure vapor phase processing chamber and the reaction gas. In this state, the object to be etched is dry-etched with the etching gas.
摘要翻译：将待蚀刻的物体装载到低压汽相处理室中，然后将通过向用于蚀刻的反应气体中添加至少含有氧的少量添加气体或添加气体而获得的蚀刻气体供给到低压气相处理室，以抑制低压气相处理室的壁与反应气体之间的反应。在这种状态下，用蚀刻气体干蚀刻被蚀刻物体。

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