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1. 发明专利

JP2004091253A SUPER-FLAT P-TYPE OXIDE SEMICONDUCTOR NiO SINGLE CRYSTAL THIN FILM 有权
公开(公告)号：JP2004091253A
公开(公告)日：2004-03-25
申请号：JP2002254050
申请日：2002-08-30
申请人： Japan Science & Technology Corp , Hiromichi Ota , 太田裕道 , 科学技術振興事業団
发明人： HOSONO HIDEO , OTA HIROMICHI , KAMIYA TOSHIO , HIRANO MASAHIRO
IPC分类号： C30B29/16 , H01L21/363
摘要： PROBLEM TO BE SOLVED: To solve a problem that an NiO thin film is an assemblage of polycrystalline bodies and has a surface having large unevenness and for example, even if a ZnO film is grown on the NiO polycrystalline thin film, the crystallinity of the ZnO is made so worse that a hetero-bonding cannot be produced.
SOLUTION: The p-type oxide semiconductor NiO single crystal thin film is obtained by annealing the polycrystalline p-type oxide NiO thin film formed by a vapor growth method to form a single crystal. The single crystal thin film is constituted of a flat terrace and a sub-nanometer (nm) step in atomic level and has ≥10
-4 S/cm conductivity at a room temperature which is controllable by changing the concentration of Li contained as an acceptor in the range of ≤30at%. The temperature of the substrate is kept at ≤100°C and the polycrystalline p-type oxide NiO thin film is formed on a heat resistant single crystal substrate by the vapor growth method and annealed at 600-1,500°C to form the single crystal.
COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2003318201A LnCuO (S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE SAME 有权
标题翻译： LnCuO（S，Se，Te）单晶薄膜，其制造方法和使用其的光学器件或电子器件
公开(公告)号：JP2003318201A
公开(公告)日：2003-11-07
申请号：JP2002197744
申请日：2002-07-05
申请人： Japan Science & Technology Corp , Masahiro Orita , Hiromichi Ota , 裕道太田 , 政寛折田 , 科学技術振興事業団
发明人： HOSONO HIDEO , HIRANO MASAHIRO , ORITA MASAHIRO , OTA HIROMICHI , HIRAMATSU SHUSUKE , UEDA KAZUSHIGE
IPC分类号： C30B29/22 , C09K11/00 , C09K11/08 , C09K11/84 , C09K11/88 , C30B23/02 , C30B33/00 , C30B33/02 , H01L21/205 , H01L21/363 , H01L21/365 , H01L29/24 , H01L33/26 , H01L33/00
CPC分类号： C30B33/00 , C30B1/02 , C30B23/02 , C30B29/22 , H01L21/0242 , H01L21/02439 , H01L21/02483 , H01L21/02485 , H01L21/02491 , H01L21/02565 , H01L21/02568 , H01L21/02631 , H01L29/24 , H01L33/26
摘要： PROBLEM TO BE SOLVED: To solve such inconvenience that conventional LnCuOX films have been manufactured by growing an amorphous film under appropriate conditions by a sputtering method and then annealing it at high temperatures, and have not displayed sufficiently high light-emitting efficiency and electron mobility as a luminous element and an electronic element material due to the fact that they are all polycrystalline. SOLUTION: A thin film as a base material is grown on a single crystal substrate, and an amorphous or polycrystalline LnCuOX (wherein, Ln denotes at least one kind of lanthanoids or Y; and X denotes at least one kind of S, Se or Te) thin film is deposited on it. After that, it is annealed at a high temperature of 500°C or above. A thin film with good crystallinity suitable for a single crystal for a light-emitting diode element, a semiconductor laser element, a field-effect transistor element or a heterobipolar transistor element can be grown. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了解决通过溅射法在合适的条件下生长非晶膜然后在高温下退火而制造常规LnCuOX膜的这种不便，并且没有显示足够高的发光效率和作为发光元件的电子迁移率和电子元件材料，由于它们都是多晶的。解决方案：在单晶衬底上生长作为基材的薄膜，以及无定形或多晶LnCuOX（其中，Ln表示至少一种镧系元素或Y; X表示S， Se或Te）薄膜沉积在其上。之后，在500℃以上的高温下退火。可以生长适用于发光二极管元件，半导体激光元件，场效应晶体管元件或异双极晶体管元件的单晶的良好结晶度的薄膜。版权所有（C）2004，JPO

3. 发明专利

JP2004103957A Transparent thin film field effect type transistor using homologous thin film as active layer 有权
公开(公告)号：JP2004103957A
公开(公告)日：2004-04-02
申请号：JP2002266012
申请日：2002-09-11
申请人： Japan Science & Technology Corp , Hiromichi Ota , 太田裕道 , 科学技術振興事業団
发明人： OTA HIROMICHI , HOSONO HIDEO , KAMIYA TOSHIO , HIRANO MASAHIRO
IPC分类号： H01L21/363 , H01L29/786
CPC分类号： H01L29/7869
摘要： PROBLEM TO BE SOLVED: To solve the problem that in ZnO as a transparent oxide semiconductor, it is difficult to reduce an electric conductivity and it is impossible to constitute a normally off field effect type transistor, or as it is difficult to form an amorphous state, an amorphous transistor adaptive for a large area cannot be manufactured. SOLUTION: In a homologous compound InMO 3 (ZnO) m (M=In, Fe, Ga or Al; m=an integer of 1 to 49) single crystal thin film manufactured by a reactive solid-phase epitaxial method, a deviation from a stoichiometry is very small and a good insulator is obtained near room temperatures. By using the homologous compound single crystal InMO 3 (ZnO) m (M=In, Fe, Ga or Al; m=an integer of 1 to 49) thin film as an active layer, a transparent thin film field effect type transistor having a good switching characteristic can be manufactured by a normally off operation. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004119525A Oxide semiconductor pn junction device 有权
公开(公告)号：JP2004119525A
公开(公告)日：2004-04-15
申请号：JP2002278214
申请日：2002-09-24
申请人： Japan Science & Technology Corp , Hiromichi Ota , 太田裕道 , 科学技術振興事業団
发明人： OTA HIROMICHI , HOSONO HIDEO , KAMIYA TOSHIO , HIRANO MASAHIRO
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To solve a problem that, since GaN used as a device material for ultraviolet-light detection has photosensitivity to visible light and an ultraviolet range, a device needs to remove unnecessary light by using an optical filter and make only ultraviolet light having a specified wavelength incident on a GAN detector.
SOLUTION: A pn junction device comprises a Zn
x Mg
1-x O (0.7 x Mg
1-x O single crystal thin film as a polycrystalline or amorphous film and annealed for epitaxial growth and contains Li ions exhibiting p-type electric conduction, or an amorphous InGaO
3 (ZnO)
m (m: an integer between 1 and 50) which is formed of a ZnRh
2 O
4 film and deposited on the pn junction device and ITO film and shows n-type electric conduction, and an amorphous NiO thin film or ZnRh
2 O
4 thin film which is deposited on InGaO
3 (ZnO)
m and shows p-type electric conduction.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003273400A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2003273400A
公开(公告)日：2003-09-26
申请号：JP2002070165
申请日：2002-03-14
申请人： Japan Science & Technology Corp , Hideaki Maruta , Hiromichi Ota , 秀昭丸田 , 裕道太田 , 科学技術振興事業団
发明人： MARUTA HIDEAKI , HOSONO HIDEO , OTA HIROMICHI , HIRANO MASAHIRO
IPC分类号： H01L33/06 , H01L33/28 , H01S5/327 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To offer a blue LED and a blue LD having a superior light emitting property, which uses a semiconductor layer such as zinc oxide compound semiconductor suitable for a blue light emitting material in a light emitting layer, by implementing a p-type layer suitable for a blue semiconductor light emitting device and by improving its crystallinity. SOLUTION: A light-emitting-layer forming portion 8, which has at least an n-type cladding layer 4, an active layer 5, and a p-type cladding layer 6 on a main surface of a substrate 1. The active layer 5 is c-axis oriented vertically on the main surface of the substrate 1. The p-type cladding layer 6 is made of nickel oxide. COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供具有优异发光特性的蓝色LED和蓝色LD，其通过实现在发光层中使用适合于蓝色发光材料的氧化锌化合物半导体的半导体层，通过实施适合于蓝色半导体发光器件的p型层并且通过改善其结晶度。解决方案：在基板1的主表面上具有至少n型包覆层4，有源层5和p型覆层6的发光层形成部8。有源层5在基板1的主表面上垂直取向为c轴.p型覆层6由氧化镍构成。版权所有（C）2003，JPO

6. 发明授权

US08821333B2 Planetary gear mechanism 有权
标题翻译：行星齿轮机构
公开(公告)号：US08821333B2
公开(公告)日：2014-09-02
申请号：US13375087
申请日：2010-06-09
申请人： Kouji Nagumo , Hiromichi Ota , Tomohiro Honda , Yoshiharu Suzuki , Yoshinobu Katoh
发明人： Kouji Nagumo , Hiromichi Ota , Tomohiro Honda , Yoshiharu Suzuki , Yoshinobu Katoh
IPC分类号： F16H1/32
CPC分类号： F16H1/32 , F16H2001/325 , F16H2001/326
摘要： A planetary gear mechanism of the invention includes a housing, an input shaft that has an eccentric portion whose center lies on an eccentric axis that is displaced from an axis of input and output shafts, and is supported by the housing to be rotatable about the axis of the input and output shafts relative to the housing, an oscillating face plate that eccentrically oscillates via the eccentric portion, such that its rotation relative to the housing is restricted, and an output shaft to which an internally toothed gear that internally contacts and meshes with an externally toothed gear formed on the oscillating face plate is mounted, and which is rotatable about the axis of the input and output shafts relative to the housing. As the input shaft rotates, a circumferential position at which the externally toothed gear and the internally toothed gear mesh with each other changes, and rotation of the input shaft is delivered at a reduced speed to the output shaft. First pins that protrude from the oscillating face plate engage with insert holes formed in the housing, so that rotation of the oscillating face plate is restricted.
摘要翻译：本发明的行星齿轮机构包括壳体，输入轴，其具有中心位于偏心轴线上的偏心部分，所述偏心部分偏离输入轴和输出轴的轴线，并且由所述壳体支撑以围绕轴线旋转相对于壳体的输入和输出轴的振动面板，经由偏心部分偏心地摆动的摆动面板，使得其相对于壳体的旋转受到限制;以及输出轴，内部齿轮与内部接触并啮合安装在摆动面板上形成的外齿齿轮，其可相对于壳体绕输入轴和输出轴的轴线转动。当输入轴旋转时，外齿轮和内齿齿轮彼此啮合的圆周位置改变，并且输入轴的旋转以降低的速度被输送到输出轴。从振动面板突出的第一销与形成在壳体中的插入孔接合，从而限制摆动面板的旋转。

7. 发明申请

US20130311989A1 METHOD AND APPARATUS FOR MAINTAINING A WORKLOAD SERVICE LEVEL ON A CONVERGED PLATFORM 有权
标题翻译：维持平台上工作服务水平的方法和装置
公开(公告)号：US20130311989A1
公开(公告)日：2013-11-21
申请号：US13476895
申请日：2012-05-21
申请人： Hiromichi OTA , Yoshiki Kano , Atsushi Murase
发明人： Hiromichi OTA , Yoshiki Kano , Atsushi Murase
IPC分类号： G06F9/455
CPC分类号： G06F11/3485 , G06F9/45558 , G06F9/5088 , G06F11/0712 , G06F11/0775 , G06F11/3442 , G06F2009/4557 , G06F2201/815
摘要： A management server is provided in a computer system having one or more hosts, one or more storage systems and one or more switches, the hosts having a plurality of virtual machines, each virtual machine being defined according to a service level agreement. The management server is operable to manage the virtual machines and resources associated with the virtual machines; receive a notification of an event from a node in the computer system; determine if the event affects a service level agreement for any of the virtual machines defined in the computer system, the service level agreements listing required attributes for the corresponding virtual machines; allocate a new resource for a virtual machine whose service level agreement is affected by the event; and move the virtual machine whose service level agreement is affected by the event to the newly allocated resource.
摘要翻译：在具有一个或多个主机，一个或多个存储系统和一个或多个交换机的计算机系统中提供管理服务器，所述主机具有多个虚拟机，每个虚拟机根据服务级别协议来定义。管理服务器可操作地管理与虚拟机相关联的虚拟机和资源; 从计算机系统中的节点接收事件的通知; 确定事件是否影响计算机系统中定义的任何虚拟机的服务级别协议，服务级别协议列出相应虚拟机的所需属性; 为服务级别协议受事件影响的虚拟机分配新资源; 并将服务级别协议受事件影响的虚拟机移动到新分配的资源。

8. 发明申请

US20130225354A1 PLANETARY GEAR REDUCER 有权
标题翻译：行星减速机
公开(公告)号：US20130225354A1
公开(公告)日：2013-08-29
申请号：US13883064
申请日：2011-09-20
申请人： Yoshinobu Katoh , Hiromichi Ota
发明人： Yoshinobu Katoh , Hiromichi Ota
IPC分类号： F16H1/32
CPC分类号： F16H1/32 , F16H2001/325
摘要： In a planetary gear device, a first side plate as carrier is formed to a disc plate shape and secures thereto pins to protrude the pins from one end surface in an axial direction. The outside diameter of the first side plate is formed to be a small diameter on one side in the axial direction and a large diameter on the other side in the axial direction. The first side plate is provided with press-fitting hole portions with the pins press-fitted thereinto and small-diameter side concavities that are formed on the press-fitting hole portions on one side in the axial direction, that open to one end surface in the axial direction of the first side plate and that have internal surfaces being out of contact with the pins at at least parts thereof.
摘要翻译：在行星齿轮装置中，作为载体的第一侧板形成为盘状，并且将其固定到销上以使销在轴向方向上从一个端面突出。第一侧板的外径在轴向一侧形成为小直径，在轴向的另一侧形成为大直径。第一侧板设置有压入孔的压入孔部分，并且在轴向方向上的一侧上的压入孔部分上形成有小直径侧凹部，第一侧板的轴向方向，并且其内表面在其至少部分处与销不接触。

9. 发明授权

US07938602B2 Three degree of freedom parallel mechanism, multi-axis control machine tool using the mechanism and control method for the mechanism 有权
标题翻译：三自由度并联机构，多轴控制机床采用机构和机构的控制方法
公开(公告)号：US07938602B2
公开(公告)日：2011-05-10
申请号：US11687764
申请日：2007-03-19
申请人： Hiromichi Ota
发明人： Hiromichi Ota
IPC分类号： B23C1/12 , B25J9/00
CPC分类号： B23Q1/5462 , B23Q1/4857 , B25J9/0066 , B25J9/1623 , B25J17/0266 , Y10T74/20317 , Y10T74/20341 , Y10T409/307672 , Y10T409/308512 , Y10T409/309576
摘要： In a three degrees of freedom parallel mechanism, a spindle head is carried by first and second movable support members to be movable along a Z-axis and to be pivotable along each of A and B-axes. The spindle head is jointed through three rods to drive sliders which are movable along three parallel linear guides secured stationarily. For jointing, there are employed spherical joints and universal joints. Kinematic parameters used in converting each command position of the movable body to target operational positions for three actuators of the Z, A and B-axes are compensated based on inversely converted command positions and inversely converted actually measured positions which have been gathered with the spindle head being located at positions of a suitable number, so that the kinematic parameters can be updated to those newest.
摘要翻译：在三自由度平行机构中，主轴头由第一和第二可移动支撑构件承载，以沿着Z轴可移动，并且能够沿A轴和B轴各自枢转。主轴头通过三个杆接合以驱动滑块，其可沿着三个平行的直线导轨固定地固定。对于接头，采用球形接头和万向节。用于将可移动体的每个指令位置转换为Z，A和B轴的三个致动器的目标操作位置的运动参数基于反向转换的指令位置和已经用主轴头聚集的反向转换的实际测量位置来补偿位于适当数量的位置，使得运动学参数可以更新为最新的。

10. 发明申请

US20090278122A1 AMORPHOUS OXIDE AND THIN FILM TRANSISTOR 审中-公开
公开(公告)号：US20090278122A1
公开(公告)日：2009-11-12
申请号：US12504116
申请日：2009-07-16
申请人： Hideo HOSONO , Masahiro HIRANO , Hiromichi OTA , Toshio KAMIYA , Kenji NOMURA
发明人： Hideo HOSONO , Masahiro HIRANO , Hiromichi OTA , Toshio KAMIYA , Kenji NOMURA
IPC分类号： H01L29/26
CPC分类号： H01L29/78696 , C23C14/0021 , C23C14/086 , C23C14/28 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693
摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

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