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    • 1. 发明专利
    • Heating cooker for continuous cooking
    • 加热烹饪机用于连续烹饪
    • JP2005058737A
    • 2005-03-10
    • JP2003426138
    • 2003-12-24
    • Hiroji Shimizu博治 清水
    • SHIMIZU HIROJI
    • A47J27/00
    • PROBLEM TO BE SOLVED: To provide a heating cooker for continuous cooking capable of constantly and accurately determining a completion of heating cooking by using temperature signals from a temperature sensor which detects a temperature from a cooking vessel even if heating cooking is performed repeatedly and continuously.
      SOLUTION: The heating cooker for continuous cooking comprises a heating means 3 for heating the cooking vessel 2, the temperature sensor 4 for detecting a temperature of the cooking vessel 2, a cooling means 5 for cooling the temperature sensor 4, and a control unit for controlling the operation of the heating means 3 by using the temperature signal from the temperature sensor 4.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种用于连续烹饪的加热烹调器,其能够通过使用来自烹饪容器检测温度的温度传感器的温度信号来恒定且准确地确定加热烹饪的完成,即使反复进行加热烹饪 并不断。 解决方案:用于连续烹饪的加热烹调器包括用于加热烹饪容器2的加热装置3,用于检测烹饪容器2的温度的温度传感器4,用于冷却温度传感器4的冷却装置5和 控制单元,用于通过使用来自温度传感器4的温度信号来控制加热装置3的操作。版权所有(C)2005,JPO&NCIPI
    • 3. 发明专利
    • Cooker for continuous cooking
    • 烹饪用于连续烹饪
    • JP2005349226A
    • 2005-12-22
    • JP2005254665
    • 2005-09-02
    • Hiroji Shimizu博治 清水
    • SHIMIZU HIROJI
    • A47J27/14A47J27/00
    • PROBLEM TO BE SOLVED: To provide a cooker for continuous cooking capable of constantly and accurately determining a completion of cooking by using temperature signals from a temperature sensor which detects a temperature of a cooking container even when cooking is performed repeatedly and continuously.
      SOLUTION: This cooker for continuous cooking container comprises a heating means for heating the cooking vessel, a temperature sensor for detecting the temperature of the cooking container, a cooling means for cooling the temperature sensor, and a controller for controlling the operation of the heating means by using temperature signals from the temperature sensor.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种用于连续烹饪的炊具,其能够通过使用来自检测烹饪容器的温度的温度传感器的温度信号来持续且准确地确定烹饪完成,即使当重复并连续地进行烹饪时。 解决方案:用于连续烹饪容器的炊具包括用于加热烹饪容器的加热装置,用于检测烹饪容器的温度的温度传感器,用于冷却温度传感器的冷却装置,以及用于控制烹饪容器的操作的控制器 加热装置通过使用来自温度传感器的温度信号。 版权所有(C)2006,JPO&NCIPI
    • 4. 发明专利
    • Heating cooker for continuous cooking
    • 加热烹饪机用于连续烹饪
    • JP2005058580A
    • 2005-03-10
    • JP2003294846
    • 2003-08-19
    • Hiroji Shimizu博治 清水
    • SHIMIZU HIROJI
    • A47J27/14A47J27/00
    • PROBLEM TO BE SOLVED: To provide a heating cooker for continuous cooking capable of constantly and accurately determining completion of heating cooking by using temperature signals from a temperature sensor which detects a temperature from a cooking vessel even if heating cooking is performed repeatedly and continuously.
      SOLUTION: The heating cooker for continuous cooking comprises a heating means for heating the cooking vessel, the temperature sensor for detecting a temperature of the cooking vessel, a cooling means for cooling the temperature sensor, and a control unit for controlling the operation of the heating means by using the temperature signal from the temperature sensor.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了提供一种用于连续烹饪的加热烹调器,其能够通过使用来自烹饪容器检测温度的温度传感器的温度信号来恒定且准确地确定加热烹饪的完成,即使反复进行加热烹饪, 不断。 解决方案:用于连续烹饪的加热烹调器包括用于加热烹饪容器的加热装置,用于检测烹饪容器的温度的温度传感器,用于冷却温度传感器的冷却装置,以及用于控制操作的控制单元 通过使用来自温度传感器的温度信号。 版权所有(C)2005,JPO&NCIPI
    • 6. 发明授权
    • Semiconductor device having gate insulating film including high dielectric material
    • 具有包括高电介质材料的栅极绝缘膜的半导体器件
    • US08558321B2
    • 2013-10-15
    • US13005085
    • 2011-01-12
    • Hiroji ShimizuYoshihiro SatoHideyuki AraiTakayuki YamadaTsutomu Oosuka
    • Hiroji ShimizuYoshihiro SatoHideyuki AraiTakayuki YamadaTsutomu Oosuka
    • H01L21/40
    • H01L27/0629H01L28/20
    • A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.
    • 一种半导体器件包括:第一导电类型的第一MIS晶体管,具有作为由半导体衬底的上部形成的元件隔离区围绕的半导体衬底的区域的第一有源区,第一栅绝缘膜, 形成在第一有源区上的高电介质膜和形成在第一栅极绝缘膜上的第一栅电极; 以及电阻元件,其具有形成在元件隔离区域上的第二高电介质膜和形成在第二高介电膜上的由硅制成的电阻层。 第一高介电膜和第二高电介质膜包括相同的高介电材料,第一高电介质膜包括第一调节金属,但第二高电介质膜不包括第一调节金属。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    • 半导体器件及其制造方法
    • US20110169100A1
    • 2011-07-14
    • US13005085
    • 2011-01-12
    • Hiroji SHIMIZUYoshihiro SatoHideyuki AraiTakayuki YamadaTsutomu Oosuka
    • Hiroji SHIMIZUYoshihiro SatoHideyuki AraiTakayuki YamadaTsutomu Oosuka
    • H01L29/78H01L21/4763
    • H01L27/0629H01L28/20
    • A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.
    • 一种半导体器件包括:第一导电类型的第一MIS晶体管,具有作为由半导体衬底的上部形成的元件隔离区围绕的半导体衬底的区域的第一有源区,第一栅绝缘膜, 形成在第一有源区上的高电介质膜和形成在第一栅极绝缘膜上的第一栅电极; 以及电阻元件,其具有形成在元件隔离区域上的第二高电介质膜和形成在第二高介电膜上的由硅制成的电阻层。 第一高介电膜和第二高电介质膜包括相同的高介电材料,第一高电介质膜包括第一调节金属,但第二高电介质膜不包括第一调节金属。