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1. 发明申请

US20050122756A1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US20050122756A1
公开(公告)日：2005-06-09
申请号：US11004391
申请日：2004-12-03
申请人： Hirofumi Higashino
发明人： Hirofumi Higashino
IPC分类号： G11C16/02 , G11C16/10 , G11C16/22 , G11C5/00
CPC分类号： G11C16/22 , G11C16/10
摘要： There is provided a semiconductor memory device in which data, stored in a unit data storage section configured by one or more data storage elements, is erased to be formed into a specific erasure data pattern. The semiconductor memory device has a data protection mechanism in which a determination is made as to whether or not data stored in the unit data storage section has the erasure data pattern, and programming of the data into the unit data storage section is inhibited when the data is not in the erasure data pattern. This mechanism can protect already programmed data from being destroyed due to programming error at the time of programming the data.
摘要翻译：提供一种半导体存储器件，其中存储在由一个或多个数据存储元件配置的单元数据存储部分中的数据被擦除以形成特定擦除数据模式。半导体存储器件具有数据保护机构，其中确定存储在单元数据存储部分中的数据是否具有擦除数据模式，并且当数据的数据被禁止时，禁止将数据编程到单元数据存储部件中不在擦除数据模式。该机制可以保护已编程的数据在编程数据时由于编程错误而被破坏。

2. 发明授权

US07079429B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07079429B2
公开(公告)日：2006-07-18
申请号：US11004391
申请日：2004-12-03
申请人： Hirofumi Higashino
发明人： Hirofumi Higashino
IPC分类号： G11C7/00
CPC分类号： G11C16/22 , G11C16/10
摘要： There is provided a semiconductor memory device in which data, stored in a unit data storage section configured by one or more data storage elements, is erased to be formed into a specific erasure data pattern. The semiconductor memory device has a data protection mechanism in which a determination is made as to whether or not data stored in the unit data storage section has the erasure data pattern, and programming of the data into the unit data storage section is inhibited when the data is not in the erasure data pattern. This mechanism can protect already programmed data from being destroyed due to programming error at the time of programming the data.
摘要翻译：提供一种半导体存储器件，其中存储在由一个或多个数据存储元件配置的单元数据存储部分中的数据被擦除以形成特定擦除数据模式。半导体存储器件具有数据保护机构，其中确定存储在单元数据存储部分中的数据是否具有擦除数据模式，并且当数据的数据被禁止时，禁止将数据编程到单元数据存储部件中不在擦除数据模式。该机制可以保护已编程的数据在编程数据时由于编程错误而被破坏。

3. 发明授权

US4916661A Semiconductor memory device with bit line pairs crossed at least once with respect to each other 失效
标题翻译：具有位线对的半导体存储器件相对于彼此至少交叉一次
公开(公告)号：US4916661A
公开(公告)日：1990-04-10
申请号：US326434
申请日：1989-03-17
申请人： Masaru Nawaki , Hirofumi Higashino , Tomoyuki Tagami
发明人： Masaru Nawaki , Hirofumi Higashino , Tomoyuki Tagami
IPC分类号： G11C11/401 , G11C11/4097
CPC分类号： G11C11/4097
摘要： A semiconductor memory device of the type with a plurality of bit line pairs and signal lines disposed parallel to these bit line pairs is characterized in that two bit lines forming a pair are crossed at least once in the middle to prevent capacitance imbalance caused by misalignment of the associated signal line.
摘要翻译：具有多个位线对和与这些位线对平行设置的信号线的类型的半导体存储器件的特征在于，形成一对的两个位线在中间至少交叉一次，以防止由于不对准引起的电容不平衡相关信号线。

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