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    • 2. 发明授权
    • Magnetic memory device
    • 磁存储器件
    • US08139402B2
    • 2012-03-20
    • US12349542
    • 2009-01-07
    • Hiroaki TanizakiShuichi UenoYasumitsu MuraiTakaharu Tsuji
    • Hiroaki TanizakiShuichi UenoYasumitsu MuraiTakaharu Tsuji
    • G11C11/14
    • H01L27/228H01L43/08
    • A magnetic memory device is provided in which, even when a recording layer having an asymmetric shape and a local via are formed over a strap wiring with a sufficient distance allowed therebetween, increase in the size of the magnetic memory device can be suppressed. The magnetic memory device includes the strap wiring, the local via, and a magnetic recording element (TMR element). The TMR element includes a fixed layer and the recording layer. The planar shape of the recording layer is asymmetric with respect to the direction of the easy magnetization axis of the recording layer and is symmetric with respect to the axis of symmetry perpendicular to the easy magnetization axis. The contoured portion of the recording layer on the side closer to the center of area of the recording layer is opposed to the local via formation side.
    • 提供了一种磁存储器件,其中即使具有不对称形状和局部通孔的记录层形成在具有允许的足够距离的带布线之间,也可以抑制磁存储器件的尺寸的增加。 磁存储器件包括带状布线,本地通孔和磁记录元件(TMR元件)。 TMR元件包括固定层和记录层。 记录层的平面形状相对于记录层的易磁化轴的方向是不对称的,并且相对于垂直于易磁化轴的对称轴对称。 在记录层的更靠近记录层的中心的一侧的记录层的轮廓部分与局部通孔形成侧相对。
    • 9. 发明授权
    • Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like
    • 抑制施加到数据线等的寄生电容的薄膜磁存储器件
    • US06791876B2
    • 2004-09-14
    • US10397352
    • 2003-03-27
    • Hiroaki TanizakiTakaharu TsujiHideto Hidaka
    • Hiroaki TanizakiTakaharu TsujiHideto Hidaka
    • G11C1100
    • G11C11/16
    • A plurality of bit lines are divided into a plurality of groups each including Y (Y: integer of at least two) bit lines. Y data read data lines passing a data read current therethrough in data reading are provided along with Y connection control parts electrically coupling Y bit lines and the Y read data lines with each other every group. Therefore, the connection control parts electrically connected with the Y read data lines are uniformly divided so that parasitic capacitance applied to the read data lines following electrical connection with the connection control parts can be suppressed. Therefore, the time for charging the read data lines to a prescribed voltage level can be reduced for executing high-speed data reading.
    • 多个位线被分成多个组,每组包括Y(Y:至少两个的整数)位线。 在数据读取中通过数据读取电流的Y数据读取数据线与Y个连接控制部分一起被提供,Y个连接控制部分将Y位线和Y个读取数据线彼此电组合。 因此,与Y读取数据线电连接的连接控制部分被均匀地分割,从而能够抑制与连接控制部件电连接之后的读取数据线路的寄生电容。 因此,为了执行高速数据读取,可以减少将读取数据线充电到规定电压电平的时间。