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1. 发明专利

DE68922919T2 未知
公开(公告)号：DE68922919T2
公开(公告)日：1995-12-07
申请号：DE68922919
申请日：1989-02-15
申请人： RIKEN KK , JAPAN RES DEV CORP , HIRAI TOSHIO , YAMANE HISANORI
发明人： KUROSAWA HIDEYUKI C O KABUSHIK , HIRAI TOSHIO , YAMANE HISANORI
IPC分类号： C23C16/40 , C30B25/02 , H01L39/24 , C04B35/50
摘要： A process for manufacturing a thin film of high-Tc superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000 DEG C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba2YCu3O7-y, wherein said vaporizing sources consist each of an organic complex compound, such as beta -diketone complex.

2. 发明专利

DE3685282D1 未知
公开(公告)号：DE3685282D1
公开(公告)日：1992-06-17
申请号：DE3685282
申请日：1986-02-27
申请人： JAPAN RES DEV CORP , JAPAN METALS & CHEM CO LTD , FURUKAWA ELECTRIC CO LTD , HIRAI TOSHIO
发明人： MATSUDA TOSHITSUGU , NAKAE HIROYUKI , HIRAI TOSHIO
IPC分类号： C01B21/064 , C04B35/583 , C04B35/5831 , C23C16/34 , C30B35/00
摘要： PCT No. PCT/JP86/00095 Sec. 371 Date Jul. 3, 1986 Sec. 102(e) Date Jul. 3, 1986 PCT Filed Feb. 27, 1986 PCT Pub. No. WO86/05169 PCT Pub. Date Sep. 12, 1986.The specification discloses a polycrystalline boron nitride of high purity and high density consisting essentially of rhombohedral crystals in which the three-fold rotation axes, parallel to the c-axis in the notation of hexagonal crystal system, of the crystals have a preferred orientation. The polycrystalline rhombohedral boron nitride can be obtained as bulk or thin film articles with desired shapes by chemical vapor deposition including the steps of introducing a source gas of boron and a source gas into a reactor containing a heated substrate and depositing boron nitride onto the heated substrate, wherein a diffusion layer of the source gas of nitrogen and/or the carrier gas is formed around the substrate. The polycrystalline rhombohedral boron nitride such obtained is very useful in applications such as crucibles for melting semiconductors, various jigs for high temperature services, high-frequency insulator, microwave transmission window and source material of boron for semiconductor. Further, the boron nitride is also ideal as a starting material for high pressure phase cubic boron nitride.

3. 发明授权

EP0336648B1 Process for producing carbon/carbon composite having oxidation resistance 失效
标题翻译：一种用于生产抗氧化的碳/碳复合材料的方法。
公开(公告)号：EP0336648B1
公开(公告)日：1995-03-15
申请号：EP89303165.8
申请日：1989-03-30
申请人： NIPPON OIL CO. LTD. , Hirai, Toshio , Sasaki, Makoto , THE GOVERNMENT OF JAPAN REPRESENTED BY THE DIRECTOR-GENERAL, NATIONAL AEROSPACE LABORATORY
发明人： Uemura, Seiichi , Sohda, Yoshio , Ido, Yasuji , Hirai, Toshio , Sasaki, Makoto , Niino, Masayuki
IPC分类号： C04B35/52 , C04B35/80 , C04B41/87
CPC分类号： C04B41/009 , C04B35/83 , C04B41/526 , C04B41/89 , Y10S427/10 , C04B41/4529 , C04B41/5001 , C04B41/5025 , C04B35/52 , C04B38/00

4. 发明授权

EP0216932B1 RHOMBOHEDRAL POLYCRYSTALLINE BORON NITRIDE AND PROCESS FOR ITS PRODUCTION 失效
标题翻译： RHOMBOHEDRAL多结晶硼氮化硼及其生产工艺
公开(公告)号：EP0216932B1
公开(公告)日：1992-05-13
申请号：EP86901511.5
申请日：1986-02-27
申请人： Research Development Corporation of Japan , JAPAN METALS & CHEMICALS CO., LTD. , THE FURUKAWA ELECTRIC CO., LTD. , Hirai, Toshio
发明人： Matsuda, Toshitsugu , Nakae, Hiroyuki , Hirai, Toshio
IPC分类号： C01B21/064 , C23C16/34
CPC分类号： C23C16/342 , C01B21/064 , C01P2002/72 , C01P2004/03 , C04B35/583 , C04B35/5831 , C30B35/002 , Y10S148/113
摘要： Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapor deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.
摘要翻译：高纯度，高密度的菱形多晶氮化硼，其基本上包含菱形晶体并且具有朝向一个方向的三重对称轴（与六角形表示的轴c平行的轴），其可以以任意质量或薄通过化学气相沉积工艺将硼源气体和氮源气体以及任选的稀释气体和载气引入具有加热基底的反应器中，以在基底上沉积氮化硼，同时提供氮源气体 - 和/或围绕加热基座的载气扩散层。所得到的氮化硼作为半导体，熔化用坩埚，各种高温夹具，高频绝缘体，微波通过孔，半导体用硼源等非常有用，而且作为高压相立方氮化硼。

5. 发明公开

EP0329103A2 Process for manufacturing thin film of high-Tc superconducting oxide 失效
标题翻译： Verfahren zur Herstellung vondünnenSchichten aus Hochtemperatur-Supraleiteroxyd。
公开(公告)号：EP0329103A2
公开(公告)日：1989-08-23
申请号：EP89102584.3
申请日：1989-02-15
申请人： KABUSHIKI KAISHA RIKEN , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
发明人： Kurosawa, Hideyuki c/o KABUSHIKI KAISHA RIKEN , Hirai, Toshio , Yamane, Hisanori
IPC分类号： H01L39/24 , C04B35/50 , C23C16/40
CPC分类号： H01L39/2441 , C23C16/408 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000°C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba₂YCu₃O 7-y , wherein said vaporizing sources consist each of an organic complex compound, such as β-diketone complex.
摘要翻译：一种通过化学气相沉积技术制造高Tc超导氧化物薄膜的方法，该技术使用构成超导氧化物的元素的蒸发源和一种载气与氧气，该方法包括在衬底上沉积一层氧化物组合物在温度低于1000℃的化学沉积条件下，并且对于至少包括钡，钇和铜的元素的蒸发源减压，并使沉积层进行外延晶体生长以形成具有化学组成的氧化物薄膜的Ba2YCu3O7-y，其中所述蒸发源由有机络合物如β-二酮络合物组成。

6. 发明公开

EP0317147A3 Si3N4-Al2O3 composite sintered bodies and method of producing the same 失效
标题翻译： SI3N4-AL2O3复合烧结体及其制造方法
公开(公告)号：EP0317147A3
公开(公告)日：1989-07-05
申请号：EP88310454.9
申请日：1988-11-07
申请人： NGK INSULATORS, LTD. , Niihara, Koichi , Hirai, Toshio
发明人： Niihara, Koichi 1-2-2 Hashirimizu-Shukusha , Nakahira, Atsushi 407 Dokushin-Ryo , Hirai, Toshio
IPC分类号： C04B35/10 , C04B35/58
CPC分类号： C04B35/111
摘要： An Si₃N₄-Al₂O₃ composite sintered body suitable for use in high-temperature structural materials consists of α-Al₂O₃ and at least one crystal phase of Si₃N₄ and sialon and is produced by sintering a shaped body of a particular Si₃N₄-Al₂O₃ mixed powder at 1,500-1,900°C. The body has high strength at high temperature and excellent oxidation resistance.

7. 发明授权

EP0149044B1 Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom 失效
标题翻译：含氮硝酸盐的硝酸铁，其生产方法及其生产的复合陶瓷
公开(公告)号：EP0149044B1
公开(公告)日：1987-05-13
申请号：EP84113503.1
申请日：1984-11-08
申请人： Research Development Corporation of Japan , THE FURUKAWA ELECTRIC CO., LTD. , JAPAN METALS & CHEMICALS CO., LTD. , Hirai, Toshio , Masumoto, Tsuyoshi
发明人： Nakae, Hiroyuki , Matsuda, Toshitsugu , Uno, Naoki, c/o Furukawa Denko Kibogaoka Shataku , Matsunami, Yukio , Hirai, Toshio , Masumoto, Tsuyoshi
IPC分类号： C01B21/064 , C04B35/58 , C23C16/34
CPC分类号： C03C17/225 , C03C2217/281 , C03C2218/152 , C04B35/583 , C23C16/34

8. 发明公开

EP0216932A1 RHOMBOHEDRAL POLYCRYSTALLINE BORON NITRIDE AND PROCESS FOR ITS PRODUCTION 失效
标题翻译： RHOMBOHEDRISCHES多晶氮化硼及其生产。
公开(公告)号：EP0216932A1
公开(公告)日：1987-04-08
申请号：EP86901511.5
申请日：1986-02-27
申请人： Research Development Corporation of Japan , JAPAN METALS & CHEMICALS CO., LTD. , THE FURUKAWA ELECTRIC CO., LTD. , Hirai, Toshio
发明人： Matsuda, Toshitsugu , Nakae, Hiroyuki , Hirai, Toshio
IPC分类号： C01B21/064 , C23C16/34
CPC分类号： C23C16/342 , C01B21/064 , C01P2002/72 , C01P2004/03 , C04B35/583 , C04B35/5831 , C30B35/002 , Y10S148/113
摘要： Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapour deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.

9. 发明专利

DE3877911D1 未知
公开(公告)号：DE3877911D1
公开(公告)日：1993-03-11
申请号：DE3877911
申请日：1988-11-07
申请人： NGK INSULATORS LTD , NIIHARA KOICHI , HIRAI TOSHIO
发明人： NIIHARA KOICHI - - HASHIRIMIZU , NAKAHIRA ATSUSHI DOKUSHIN-RYO , HIRAI TOSHIO
IPC分类号： C04B35/584 , C04B35/10 , C04B35/111 , C04B35/58
摘要： An Si3N4-Al2O3 composite sintered body suitable for use in high-temperature structural materials consists of alpha -Al2O3 and at least one crystal phase of Si3N4 and sialon and is produced by sintering a shaped body of a particular Si3N4-Al2O3 mixed powder at 1,500-1,900 DEG C. The body has high strength at high temperature and excellent oxidation resistance.

10. 发明专利

GB2198150B MEMBRANE FOR USE IN X-RAY MASK AND METHOD FOR PREPARING THE SAME 未知
公开(公告)号：GB2198150B
公开(公告)日：1991-02-06
申请号：GB8725065
申请日：1987-10-26
申请人： JAPAN RES DEV CORP , HIRAI TOSHIO , MASUMOTO TSUYOSHI , FURUKAWA ELECTRIC CO LTD
发明人： OYOBE AKIRA , MAEDA TOSHIHIKO , NAKAE HIROYUKI , HIRAI TOSHIO , MASUMOTO TSUYOSHI
IPC分类号： C01B35/14 , G03F1/00 , G03F1/22 , H01L21/027
摘要： A membrane for use in an X-ray mask composed of a compound comprising at least three kinds of elements of boron (B), silicon (Si) and nitrogen (N) in which the content of silicon in the compound is at least 15 atomic percent, but less than 100 atomic percent, and the atomic ratio of Si/(B+Si) in the compound is at least 0.2, but less than one. The membrane is synthesized from source gases including at least the foregoing three kinds of elements by chemical reaction under such conditions that the ratio of nitrogen to boron plus silicon is at least one in the source gases and thereby depositing a film of the compound onto a substrate. Since the membrane thus prepared has a high transmittance in the visible region and X-ray and their residual stress can be readily controlled by adjusting the conditions for the formation of the membrane, it is suitable for the preparation of X-ray masks.

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