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1. 发明申请

WO2005064035A1 HERSTELLUNG VON DÜNNEN PLÄTTCHEN AUS ZUMINDEST EINEM DIELEKTRISCHEN STOFF 审中-公开
标题翻译：产生至少一种电介质材料的薄板
公开(公告)号：WO2005064035A1
公开(公告)日：2005-07-14
申请号：PCT/EP2004/053614
申请日：2004-12-20
申请人： DIPL.-ING. HILMAR WEINERT VAKUUM-VERFAHRENSTECHNIK GMBH , WEINERT, Hilmar
发明人： WEINERT, Hilmar
IPC分类号： C23C14/22
CPC分类号： C23C14/001 , C01P2004/20 , C01P2004/61 , C01P2004/84 , C09C1/0015 , C09C1/0018 , C09C1/0021 , C09C1/0078 , C09C2200/1004 , C09C2200/1037 , C09C2220/20
摘要： Offenbart ist ein Verfahren zur Herstellung dünner Plättchen innerhalb einer Vakuumkammer durch Verdampfung und Kondensation auf einem flüssigen Metallfilm.
摘要翻译：公开了一种用于生产薄板的方法是真空室中通过蒸发和冷凝到液态金属膜之内。

2. 发明专利

DE4104415C1 未知
公开(公告)号：DE4104415C1
公开(公告)日：1992-06-04
申请号：DE4104415
申请日：1991-02-14
申请人： 4P VERPACKUNGEN RONSBERG GMBH, 8951 RONSBERG, DE , DIPL.-ING. HILMAR WEINERT VAKUUM-VERFAHRENSTECHNIK GMBH, 8950 KAUFBEUREN, DE
发明人： WEINERT, HILMAR, DIPL.-ING., 8950 KAUFBEUREN, DE
IPC分类号： C23C14/26 , C23C14/24 , C23C14/28 , C23C14/56
摘要： A line evaporator is described having all round thermal insulation, radiant heaters and radiation shields which are provided with a number of vapour exit orifices in the direction of a substrate to be coated, the radiant heaters being formed substantially flat and each being arranged beneath an upper radiation shield and within its screening range and running parallel to the surface of the material to be evaporated, the exit orifices directed at the material to be evaporated being provided between the radiant heaters.

3. 发明专利

DE3223180A1 Vacuum plant for soldering and annealing metallic workpieces 未知
公开(公告)号：DE3223180A1
公开(公告)日：1983-12-22
申请号：DE3223180
申请日：1982-06-22
申请人： HILMAR WEINERT VAKUUM VERFAHRE
发明人： WEINERT HILMAR
IPC分类号： F27B5/04 , F27B5/12 , F27B14/00 , B23K3/00
摘要： The invention shown in the accompanying drawing reduces the set-up times and simplifies the charging of large vacuum furnaces with a horizontal vacuum chamber. According to the invention, the vacuum chamber consists of a stationary upper portion (2) and one or more, preferably two, lower portions (3,3a) which can be lowered and extended. A change of charge is thus shortened to the time required for raising/lowering and moving the lower portions (3 and 3a). While one charge is in the process another can be prepared.

4. 发明授权

US07273522B2 Plane-parallel structures of silicon/silicon oxide 失效
标题翻译：硅/氧化硅的平面平行结构
公开(公告)号：US07273522B2
公开(公告)日：2007-09-25
申请号：US10517283
申请日：2003-06-16
申请人： Patrice Bujard , Holger Leybach , Hilmar Weinert
发明人： Patrice Bujard , Holger Leybach , Hilmar Weinert
IPC分类号： C04B14/04
CPC分类号： C09C1/0021 , C01P2004/54 , C09C1/0015 , C09C1/0018 , C09C1/0024 , C09C1/0039 , C09C2200/1037 , C09C2200/301 , C09C2200/302 , C09C2200/308 , C09C2220/20
摘要： The present invention relates to plane-parallel structures of silicon/silicon oxide (silicon/silicon oxide flakes), obtainable by heating plane-parallel structures of SiOy in an oxygen-free atmosphere at a temperature above 400° C., wherein 0.70≦y≦1.8, or plane-parallel structures of silicon/silicon oxide, obtainable by heating plane-parallel structures of SiOx in an oxygen-free atmosphere at a temperature above 400° C., wherein 0.03≦x≦0.95, a process for their production and their use for the production of interference pigments.
摘要翻译：本发明涉及硅/氧化硅（硅/氧化硅薄片）的平面 - 平行结构，其可通过在无氧气氛中在高于400℃的温度下加热SiO 2的平面平行结构而获得 ℃，其中0.70 <= y <= 1.8，或者通过在无氧气氛中在一定温度下加热SiO 2的平面平行结构而获得的硅/氧化硅的平面平行结构高于400℃，其中0.03 <= x <= 0.95，其生产方法及其用于生产干涉颜料的方法。

5. 发明授权

US07157116B2 Method for the production of plane-parallel platelets by using organic separating agents 有权
标题翻译：通过使用有机分离剂生产平面血小板的方法
公开(公告)号：US07157116B2
公开(公告)日：2007-01-02
申请号：US10478190
申请日：2002-05-21
申请人： Hilmar Weinert
发明人： Hilmar Weinert
IPC分类号： C23C14/00 , C23C14/22
CPC分类号： B82Y30/00 , C01P2004/20 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C09C1/62 , C09C1/627 , C09C1/64 , C23C14/0005 , C23C14/024 , Y10T428/31663
摘要： A new method is proposed for the production of plane-parallel platelets, comprising the steps a) vapor-deposition, at a pressure below atmospheric pressure, of a separating agent onto a carrier to produce a separating agent layer, b) vapor-deposition, at a pressure below atmospheric pressure, of at least one product layer onto the separating agent layer, c) dissolution of the separating agent layer in a solvent and production of a suspension in which the at least one product layer is present in the form of plane-parallel platelets, in which method the separating agent is selected from the group consisting of anthracene, anthraquinone, acetamidophenol, acetylsalicylic acid, camphoric anhydride, benzimidazole, benzene-1,2,4-tricarboxylic acid, biphenyl-2,2-dicarboxylic acid, bis(4-hydroxyphenyl)-sulfone, dihydroxyanthraquinone, hydantoin, 3-hydroxybenzoic acid, 8-hydroxyquinoline-5-sulfonic acid monohydrate, 4-hydroxycoumarin, 7-hydroxycoumarin, 3-hydroxynaphthalene-2-carboxylic acid, isophthalic acid, 4,4-methylene-bis-3-hydroxynaphthalene-2-carboxylic acid, naphthalene-1,8-dicarboxylic anhydride, phthalimide and its potassium salt, phenol-phthalein, phenothiazine, saccharin and its salts, tetraphenylmethane, triphenylene, triphenylmethanol, and also mixtures of at least two of those substances. Separating agents that have been found to be especially suitable are aromatic compounds having at least one benzene ring. The present invention relates also to the use of the plane-parallel platelets thereby produced and also to the products obtainable using such methods.
摘要翻译：提出了一种生产平面平行血小板的新方法，包括以下步骤：a）在低于大气压的压力下将分离剂气相沉积到载体上以产生分离剂层，b）气相沉积，在低于大气压的压力下，至少一个产品层到分离剂层上，c）将分离剂层溶解在溶剂中并产生其中至少一个产物层以平面形式存在的悬浮液平行血小板，其中分离剂选自蒽，蒽醌，乙酰氨基苯酚，乙酰水杨酸，樟脑酸酐，苯并咪唑，苯-1,2,4-三羧酸，联苯-2,2-二羧酸，双（4-羟基苯基）砜，二羟基蒽醌，乙内酰脲，3-羟基苯甲酸，8-羟基喹啉-5-磺酸一水合物，4-羟基香豆素，7-羟基香豆素，3-羟基萘-2-羧酸是邻苯二甲酸，4,4'-亚甲基双-3-羟基萘-2-羧酸，萘-1,8-二羧酸酐，邻苯二甲酰亚胺及其钾盐，苯酚酞，吩噻嗪，糖精及其盐，四苯基甲烷，三亚苯基，三苯基甲醇，以及这些物质中的至少两种的混合物。已经发现特别合适的分离剂是具有至少一个苯环的芳族化合物。本发明还涉及由此制备的平面平行血小板的用途，以及使用这些方法可获得的产品。

6. 发明专利

DE102004014147A1 Thin plates of dielectric and/or semiconductor material are formed by thermally vaporising the material and then condensing it on a liquid metal film 未知
公开(公告)号：DE102004014147A1
公开(公告)日：2005-07-28
申请号：DE102004014147
申请日：2004-03-23
申请人： HILMAR WEINERT VAKUUM VERFAHRE
发明人： WEINERT HILMAR
IPC分类号： B82B1/00 , B82B3/00 , C09C1/00 , C09C3/00 , C23C14/00
摘要： A process for producing thin plates made of dielectric material and/or a semiconductor in a vacuum chamber, comprises thermally vaporising the material, and then condensing it on a liquid metal film. At least one layer is vaporised onto the film, and the layers are then removed and separated. The metal film consists of Sn, Pb, In, Bi, or their alloys.

7. 发明专利

DE102004002222B3 Thin plates of dielectric and/or semiconductor material are formed by thermally vaporising the material and then condensing it on a liquid metal film 未知
公开(公告)号：DE102004002222B3
公开(公告)日：2005-07-21
申请号：DE102004002222
申请日：2004-01-15
申请人： HILMAR WEINERT VAKUUM VERFAHRE
发明人： WEINERT HILMAR
IPC分类号： B82B1/00 , B82B3/00 , C09C1/00 , C09C3/00 , C23C14/00
摘要： A process for producing thin plates made of dielectric material and/or a semiconductor in a vacuum chamber, comprises thermally vaporising the material, and then condensing it on a liquid metal film. At least one layer is vaporised onto the film, and the layers are then removed and separated. The metal film consists of Sn, Pb, In, Bi, or their alloys.

8. 发明授权

US07256425B2 Methods of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof 失效
标题翻译：生成低氧化硅，二氧化硅和/或碳化硅的平面平行结构的方法，可通过这些方法获得的平面平行结构及其用途
公开(公告)号：US07256425B2
公开(公告)日：2007-08-14
申请号：US10504412
申请日：2003-02-11
申请人： Hilmar Weinert , Patrice Bujard , Rüdiger Hainz
发明人： Hilmar Weinert , Patrice Bujard , Rüdiger Hainz
IPC分类号： H01L25/15 , H01L31/0312
CPC分类号： C09C1/0018 , C01P2004/54 , C09C1/0015 , C09C1/0021 , C09C2200/1037 , C09C2200/301 , C09C2200/302 , C09C2220/20 , C23C14/0005 , C23C14/024 , C23C14/10 , Y02T50/67
摘要： A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOy may be oxidised to SiO2 in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOy may be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.
摘要翻译：描述了以PVD方法生产的产品，其由厚度在20至2000nm的薄平面平行结构和小于1mm的范围内的小尺寸组成。通过将低氧化硅冷凝到通过蒸发器的载体上进行生产。载体在低聚硅氧烷冷凝前用PVD法中的可溶性，无机或有机分离剂进行预涂。包括通过溶解分离产品的所有步骤可以在不同的地点连续地同时进行。作为最后的步骤，SiO 2可以在含氧气体中在大气压和大于200℃的温度下氧化成SiO 2， y可以在500℃至1500℃的含碳气体的平面 - 平行结构的表面处转化为SiC。以这种方式制造的产品的厚度均匀性很高。

9. 发明申请

US20050252410A1 Plane-parallel structures of silicon/silicon oxide 失效
标题翻译：硅/氧化硅的平面平行结构
公开(公告)号：US20050252410A1
公开(公告)日：2005-11-17
申请号：US10517283
申请日：2003-06-16
申请人： Patrice Bujard , Holger Leybach , Hilmar Weinert
发明人： Patrice Bujard , Holger Leybach , Hilmar Weinert
IPC分类号： A61K8/19 , A61K8/25 , C01B33/113 , C08K3/34 , C08L101/00 , C09C1/00 , C09C1/28 , C09D11/00 , C04B2/00
CPC分类号： C09C1/0021 , C01P2004/54 , C09C1/0015 , C09C1/0018 , C09C1/0024 , C09C1/0039 , C09C2200/1037 , C09C2200/301 , C09C2200/302 , C09C2200/308 , C09C2220/20
摘要： The present invention relates to plane-parallel structures of silicon/silicon oxide (silicon/silicon oxide flakes), obtainable by heating plane-parallel structures of SiOy in an oxygen-free atmosphere at a temperature above 400° C., wherein 0.70≦y≦1.8, or plane-parallel structures of silicon/silicon oxide, obtainable by heating plane-parallel structures of SiOx in an oxygen-free atmosphere at a temperature above 400° C., wherein 0.03≦x≦0.95, a process for their production and their use for the production of interference pigments.
摘要翻译：本发明涉及硅/氧化硅（硅/氧化硅薄片）的平面 - 平行结构，其可通过在无氧气氛中在高于400℃的温度下加热SiO 2的平面平行结构而获得 ℃，其中0.70 <= y <= 1.8，或者通过在无氧气氛中在一定温度下加热SiO 2的平面平行结构而获得的硅/氧化硅的平面平行结构高于400℃，其中0.03 <= x <= 0.95，其生产方法及其用于生产干涉颜料的方法。

10. 发明授权

US5239611A Series evaporator 失效
标题翻译：系列蒸发器
公开(公告)号：US5239611A
公开(公告)日：1993-08-24
申请号：US830685
申请日：1992-02-04
申请人： Hilmar Weinert
发明人： Hilmar Weinert
IPC分类号： C23C14/26 , C23C14/24
CPC分类号： C23C14/243 , Y02T50/67
摘要： A device for heating a material to an evaporation temperature so that the material can be coated on a substrate is provided which includes a series evaporator for containing the material to be coated. There is also provided a plurality of radiant heaters disposed above the evaporator and the material to be evaporated, the heaters each being essentially flat and disposed parallel and adjacent to the upper surface of the material. Heat shields are also disposed above the radiant heaters and below a substrate to be coated and have an area sufficient to prevent direct radiant heat contact with the substrate to be coated. A plurality of vapor outlet openings are formed between each adjacent heat shield of the series evaporator and face the substrate to be coated. The outlets are in vapor communication with the material being evaporated. Each of the radiant heaters are located beneath an upper heat shield and within the area protected by the heat shields.
摘要翻译：提供了一种用于将材料加热至蒸发温度以使材料可以涂覆在基底上的装置，其包括用于容纳待涂覆材料的串联蒸发器。还设置了多个辐射加热器，其设置在蒸发器上方和待蒸发的材料上，每个加热器基本上是平的并且平行并邻近材料的上表面设置。隔热罩也设置在辐射加热器之上并在待涂覆的基底下方，并且具有足以防止与待涂覆的基底的直接辐射热接触的面积。在串联蒸发器的每个相邻的隔热罩之间形成多个蒸气出口，并且面对待涂覆的基板。出口与被蒸发的材料蒸汽连通。每个辐射加热器位于上部隔热罩的下方，并在由隔热罩保护的区域内。

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